Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: In this article, the authors focus on recent studies of quantum wire transistors and Y-branch switches realized by electron beam lithography and wet etching of modulation doped GaAs/AlGaAs heterostructures in relation to nanoelectronic applications.
Abstract: Advanced lithographic techniques allow the fabrication of strongly confined semiconductor nanostructures in which carriers travel without suffering from inelastic scattering even for bias voltages between the contacts exceeding several 100 mV. In the ballistic nonlinear transport regime, nanoelectronic devices show several electric properties very different from those of diffusive conductors. In this review we focus on recent studies of quantum wire transistors and Y-branch switches realized by electron beam lithography and wet etching of modulation doped GaAs/AlGaAs heterostructures in relation to nanoelectronic applications, such as a quantum wire amplifier, a compact AND gate based on a single Y-branch, feedback coupled bistable switching devices, static memory elements and a novel NAND gate with defined outputs realized by monolithically integrated Y-branches.
42 citations
26 Apr 2018
TL;DR: Thomsa et al. as discussed by the authors showed that the use of a backscattered electron image together with a metal coating where appropriate can yield better measurement results than by using secondary electrons.
Abstract: As optical lithography advances toward the 10 nm mark, much effort is being expended to push electron beam lithography into the deep sub-10-nm regime. A significant issue at this length scale is the ability to accurately measure and compare linewidths. Measurements using secondary electron micrographs have a bias of a few nanometers and are therefore difficult to interpret in the sub-10-nm regime. Transmission electron microscopy can give greater accuracy but requires significant effort. This article shows that the use of a backscattered electron image together with a metal coating where appropriate can yield better measurement results than by using secondary electrons. With the use of a suitable model, linewidths for sub-10-nm hydrogen silsesquioxane lines were extracted with an estimated error of 1 nm. © 2010 American Vacuum Society. DOI: 10.1116/1.3505129 Courtesy of S. Thomsa and D. S. Macintyre, University of Glasgow
42 citations
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TL;DR: In this article, the authors proposed a capacitance compensation scheme to ensure continuous resist exposure of SAL601 polymer resist at scan speeds up to 1 mm/s, where the emission current from each tip is individually c
Abstract: Scanning probe lithography (SPL) is capable of sub-30-nm-patterning resolution and nanometer-scale alignment registration, suggesting it might provide a solution to the semiconductor industry’s lithography challenges However, SPL throughput is significantly lower than conventional lithography techniques Low throughput most limits the widespread use of SPL for high resolution patterning applications This article addresses the speed constraints for reliable patterning of organic resists Electrons field emitted from a sharp probe tip are used to expose the resist Finite tip-sample capacitance limits the bandwidth of current-controlled lithography in which the tip-sample voltage bias is varied to maintain a fixed emission current during exposure We have introduced a capacitance compensation scheme to ensure continuous resist exposure of SAL601 polymer resist at scan speeds up to 1 mm/s We also demonstrate parallel resist exposure with two tips, where the emission current from each tip is individually c
42 citations
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TL;DR: In this paper, the growth technique used was low pressure chemical vapor deposition (LPCD) for SiGe as well as device applications such as light-emitting diodes.
Abstract: There is increasing interest in Si-based optoelectronics using Si/sub 1-x/Ge/sub x/ nanostructures due to the possibility of their integration with the Si technology. To overcome the problem of the indirect character of SiGe one is looking for means to increase the transition probability by realizing structures involving quantum size effects. Several fabrication strategies for semiconductor nanostructures have been proposed. One possible approach involves selective epitaxy to fill-in the small holes in patterned substrates. To realize the lateral confinement below 100 nm the patterned substrates are made either by e-beam lithography or by optical lithography. In the latter case, the sub-100 nm confinement is realized by the development of facets. Another approach for nanostructures is based on self-organized growth which leads to island formation in highly lattice-mismatched layers. In this paper these items are discussed for SiGe as well as device applications such as light emitting diodes. The growth technique used was low pressure chemical vapor deposition.
42 citations
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TL;DR: This work presents the fabrication of such submicrometer scale structures by three dimensional laser two-photon photolithography, results of their optical properties measurements and compare the latter with numerical simulations.
Abstract: Simple diffraction structures having the form of a regular grid of pillars can generate a significant range of hues in white light transmission due to color-dependent diffraction into higher orders. We present the fabrication of such submicrometer scale structures by three dimensional laser two-photon photolithography, results of their optical properties measurements and compare the latter with numerical simulations.
42 citations