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Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.


Papers
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Journal ArticleDOI
TL;DR: The exciton lifetime of single silicon quantum dots, fabricated by electron beam lithography, reactive ion etching and oxidation, is measured and it is shown that this lifetime variation may be the origin of the heavily debated non-exponential (stretched) decays typically observed for ensemble measurements.
Abstract: We measured the exciton lifetime of single silicon quantum dots, fabricated by electron beam lithography, reactive ion etching and oxidation. The observed photoluminescence decays are of mono-expon ...

42 citations

Journal ArticleDOI
TL;DR: In this paper, Schottky gates are used for the fabrication and integration of single electron transistors in the Si∕SiGe heterosystem and Coulomb-blockade and stability diamonds are observed on lateral quantum dots.
Abstract: Lateral quantum dots are formed in the two-dimensional electron gases of a high-mobility Si∕SiGe heterostructures by means of split Schottky gates. Palladium gates, defined by e-beam lithography and lift-off, show Schottky barriers with very well controlled leakage currents. At low temperatures we observe Coulomb-blockade and stability diamonds on lateral quantum dots containing a total charge of about 25 electrons. The experiments demonstrate that, in contrast to recent reports, Schottky gates are a feasible approach for the fabrication and integration of single electron transistors in the strained Si∕SiGe heterosystem.

42 citations

Journal ArticleDOI
TL;DR: In this paper, a patterning of colloidal nanocrystal films that combines direct e-beam (electron beam) writing with cation exchange was reported. But the patterning was performed only in nonirradiated regions.
Abstract: In this Letter we report patterning of colloidal nanocrystal films that combines direct e-beam (electron beam) writing with cation exchange The e-beam irradiation causes cross-linking of the ligand molecules present at the nanocrystal surface, and the cross-linked molecules act as a mask for further processing Consequently, in the following step of cation exchange, which is performed by directly dipping the substrate in a solution containing the new cations, the regions that have not been exposed to the electron beam are chemically transformed, while the exposed ones remain unchanged This selective protection allows the design of patterns that are formed by chemically different nanocrystals, yet in a homogeneous nanocrystal film Spatially resolved compositional analysis by energy-dispersive X-ray spectroscopy (EDS) corroborates that the selective exchange occurs only in the nonirradiated regions We demonstrate the utility of this lithography approach by fabricating conductive wires and luminescent pa

42 citations

Journal ArticleDOI
David C. Joy1
TL;DR: In this article, a Monte Carlo simulation was used to model two special situations: a thin, freestanding, resist and a thin resist on a bulk substrate to calculate the exposure conditions required for the highest resolution lithography in this condition.

42 citations

Journal ArticleDOI
TL;DR: In this article, a comparative study of three kinds of oscillating devices (cantilever, bridge and quad beam) is presented, and the quad beam design has been selected for fabrication because it combines high sensitivity and good electrical response.

41 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202384
2022163
2021108
2020161
2019174
2018204