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Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.


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Journal ArticleDOI
TL;DR: In this paper, a self-assembling monolayer of dodecanethiole molecules was used as the resist for a lithography technique based on a beam of metastable helium atoms.
Abstract: We have used a self-assembling monolayer of dodecanethiole molecules as the resist for a lithography technique based on a beam of metastable helium atoms Doses as low as 3 metastable helium atoms per 10 molecules are enough to write patterns into this resist An edge resolution of 30 nanometers is demonstrated The writing mechanism is based on the damage of the resist due to Penning ionization

41 citations

Journal ArticleDOI
TL;DR: In this article, direct laser writing (DLW) in positive tone photoresists is used for fast fabrication of arrays of nanoscale plasmonic structures with a great level of control over the design and dimensions of the nanostructures.
Abstract: A challenge for design, testing, and fabrication of nanostructured chemical sensors is the fabrication of mm2 size arrays of nanostructures in a reasonable time. Herein, we introduce and show how direct laser writing (DLW) in positive-tone photoresists, followed by lift-off process, can be used for fast fabrication (up to three times faster than a comparable electron beam lithography system) of arrays of nanoscale plasmonic structures with a great level of control over the design and dimensions of the nanostructures. We demonstrate the function of nanostructured arrays, fabricated by various DLW approaches, with surface enhanced infrared absorption (SEIRA) detection of nine vibrational modes of PMMA. We also discuss the tunability of the plasmonic resonance—and hence the spectral detection range—by alteration of the size and array parameters of the nanostructures, and demonstrate the flexibility of this fabrication method by showing devices made of various substrate and antenna materials.

41 citations

Journal ArticleDOI
TL;DR: In this paper, a GaInAsP/InP compressive strained quantum-well two-dimensional (2D) photonic crystals were fabricated to exhibit an effective spontaneous emission control without discrimination by surface recombination and the photoluminescence from the formed structures was almost as strong as that from an as-grown wafer.
Abstract: We have fabricated GaInAsP/InP compressive strained quantum-well two-dimensional (2D) photonic crystals, which are expected to exhibit an effective spontaneous emission control without discrimination by surface recombination. Electron beam lithography and methane-based reactive ion beam etching techniques were used to form submicron periodic structures. The photoluminescence from the formed structures was almost as strong as that from an as-grown wafer. In addition, it was observed that the emission inside the substrate plane was transverse-magnetic-polarized when the designed photonic bandgap for transverse-electric (TE) polarization overlapped with the emission frequency, while the emission from the as-grown wafer was TE-polarized. These results support the theory of spontaneous emission control effect by quantum confinement of photons and electrons.

41 citations

Journal ArticleDOI
TL;DR: It is shown that a focused electron probe can be used to produce controllable local oxidation of BP through nanometre size defects created in the encapsulation layer by the electron impact, achieving a spatial resolution down to 6 nm.
Abstract: Atomically thin black phosphorus (BP) has attracted considerable interest due to its unique properties, such as an infrared band gap that depends on the number of layers and excellent electronic transport characteristics. This material is known to be sensitive to light and oxygen and degrades in air unless protected with an encapsulation barrier, limiting its exploitation in electrical devices. We present a new scalable technique for nanopatterning few layered BP by direct electron beam exposure of encapsulated crystals, achieving a spatial resolution down to 6 nm. By encapsulating the BP with single layer graphene or hexagonal boron nitride (hBN), we show that a focused electron probe can be used to produce controllable local oxidation of BP through nanometre size defects created in the encapsulation layer by the electron impact. We have tested the approach in the scanning transmission electron microscope (STEM) and using industry standard electron beam lithography (EBL). Etched regions of the BP are sta...

41 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202384
2022163
2021108
2020161
2019174
2018204