Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Switching fields and magnetostatic interactions of thin film magnetic nanoelements

Abstract: Switching fields of magnetic elements with nanometric dimensions have been investigated by Lorentz microscopy using a transmission electron microscope. Acicular elements of Co and Ni80Fe20 were fabricated by electron beam lithography and lift-off techniques. They were 1.6–3.5 μm long, 200 nm wide, and 20–50 nm thick, with flat rectangular ends or triangular pointed ends, and were patterned in linear arrays with center-to-center spacing ranging from 7 μm to 250 nm. Switching fields and reversal behavior of the elements were found to depend strongly on the shape of the ends and, in a closely packed array, on element separation, thereby providing a way of controlling their magnetic properties.

Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors

Abstract: We report the fabrication of a photonic platform consisting of single wire light-emitting diodes (LED) and photodetectors optically coupled by waveguides. MOVPE-grown (metal–organic vapor-phase epitaxy) InGaN/GaN p–n junction core–shell nanowires have been used for device fabrication. To achieve a good spectral matching between the emission wavelength and the detection range, different active regions containing either five narrow InGaN/GaN quantum wells or one wide InGaN segment were employed for the LED and the detector, respectively. The communication wavelength is ∼400 nm. The devices are realized by means of electron beam lithography on Si/SiO2 templates and connected by ∼100 μm long nonrectilinear SiN waveguides. The photodetector current trace shows signal variation correlated with the LED on/off switching with a fast transition time below 0.5 s.

Blazed gratings and Fresnel lenses fabricated by electron-beam lithography

Abstract: A blazing technique using electron-beam lithography to achieve higher efficiency of gratings and Fresnel lenses is described. Transmission-type blazed gratings have been formed in polymethyl methacrylate films. As a result of measurement, we found that their diffraction efficiency of the first order in these gratings amounts to as much as 60 to 70% at 0.633 microm. Fresnel lenses of 1-mm diameter and 5-mm focal length, which have a sawtooth relief profile, have been also fabricated, and the experimental results showed high-efficiency performance (about 50%) and nearly diffraction-limited focusing.

Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist

Abstract: An extensive study of parameters pertinent to electron beam lithography with hydrogen silsesquioxane as a negative tone electron beam resist is presented. With higher developer concentrations contrast and reproducibility are improved significantly at the expense of lower sensitivity. In a similar way extended delays between the baking and exposure degrade the sensitivity but increase the contrast. In contrast, at higher baking temperatures the sensitivity is improved but the contrast and reproducibility deteriorate. These results are discussed within a microscopic model. Contrast values as high as 10 and good reproducibility have been obtained with a developer concentration of 25% tetramethyl ammonium hydroxide and a baking temperature of 90 °C. With these optimal parameters an experimental lithographic pattern of 50 nm lines and spaces could be resolved in 220 nm thick HSQ resist film exposed at 50 keV.

Proximity effect in electron beam lithography

Abstract: Proximity effect is the most severe factor that influences the exposure resolution of electron beam. In this paper, the mechanism of proximity effect is discussed through Monte Carlo simulation of the electron scattering processes. And effective approaches of proximity effect correction are proposed. The theoretical results of Monte Carlo simulation and experimental results show that proximity effect is determined by many factors, in addition to the shape, size and packing density of patterns, proximity effect is also dependent on processes conditions. Only on the basis of optimizing the processes conditions and mask design, the expectant purpose of proximity effect correction by software can be achieved. Proximity effect is effectively reduced through improving mask design, optimizing processes conditions and utilizing proximity effect correction software.