Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: In this article, a variety of fabrication techniques for single-wall nanotube (SWNT) circuits have been developed, ranging from variants of electron beam lithography to AFM nanomanipulations.
38 citations
Patent•
TSMC1
TL;DR: In this paper, a reflective electron-beam lithography and methods of producing the same are described, which includes a substrate, a plurality of conductive layers formed on the substrate, which are parallel to each other and separated by insulating pillar structures.
Abstract: A device for reflective electron-beam lithography and methods of producing the same are described. The device includes a substrate, a plurality of conductive layers formed on the substrate, which are parallel to each other and separated by insulating pillar structures, and a plurality of apertures in each conductive layer. Apertures in each conductive layer are vertically aligned with the apertures in other conductive layers and a periphery of each aperture includes conductive layers that are suspended.
38 citations
TL;DR: Scanning-Probe-Assisted Nanowire Circuitry (SPANC) is introduced as a new method to fabricate electrodes for the characterization of electrical transport properties at the nanoscale, allowing robust device fabrication and electrical characterization of several nanoobjects.
Abstract: We introduce scanning-probe-assisted nanowire circuitry (SPANC) as a new method to fabricate electrodes for the characterization of electrical transport properties at the nanoscale. SPANC uses an a...
38 citations
TL;DR: In this article, an end-point detection technique based on in situ observation of the electrodeposition process was developed to reproducibly obtain uniform arrays of such structures, which were used to form high resolution etch masks, dense nanomagnet arrays and highly anisotropic metal nanostructures.
Abstract: We use high voltage electron beam lithography followed by electroplating to define small metal features on semiconductor substrates. These have been used to form high resolution etch masks, dense nanomagnet arrays, and highly anisotropic metal nanostructures. To reproducibly obtain uniform arrays of such structures, we have developed an end-point detection technique, which is based on in situ observation of the electrodeposition process.
38 citations
TL;DR: In this article, high-resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000.
Abstract: Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000.1XP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6∕O2∕CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2. 20nm half-pitch lines and 10nm lines with a pitch down to 60nm are written and transferred into silicon.
38 citations