Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: In this paper, a novel nanocomposite resist system was developed for sub-100 nm resolution e-beam lithography by dispersing surface-treated silica nanoparticles in a commercial ZEP520 resist.
38 citations
TL;DR: A new fabrication method to improve the optical extraction efficiency of light-emitting devices is presented, which does not require expensive exposure lithography tools and is therefore suitable for conventional semiconductor processes.
Abstract: A new fabrication method to improve the optical extraction efficiency of light-emitting devices is presented. The morphology of a self-assembled block copolymer was transferred to the surface of a compound semiconductor to achieve a subwavelength columnar structure. The optical extraction efficiency of the substrates with subwavelength columnar structures of 350 nm pillar height, 130 nm diameter, and 180 nm pitch, improved 2.2 times compared to unprocessed substrates. This method does not require expensive exposure lithography tools and is therefore suitable for conventional semiconductor processes.
38 citations
TL;DR: The presented method forms the basis for further studies on singular light fields in the EUV frequency range, i.e., in EUV interference lithography, and may also find applications in various fields of x ray optics.
Abstract: We fabricate computer generated holograms for the generation of phase singularities at extreme ultraviolet (EUV) wavelengths using electron beam lithography and demonstrate their ability to generate optical vortices in the nonzero diffraction orders. To this end, we observe the characteristic intensity distribution of the vortex beam and verify the helical phase structure interferometrically. The presented method forms the basis for further studies on singular light fields in the EUV frequency range, i.e., in EUV interference lithography. Since the method is purely achromatic, it may also find applications in various fields of x ray optics.
38 citations
TL;DR: In this paper, a new type of chemically amplified resist, SU8C, is evaluated for electron beam lithography, which is a modification of the ultraviolet sensitive negative epoxy SU8.
Abstract: The properties of a new type of chemically amplified resist, SU8C, are evaluated for electron beam lithography. This resist is a modification of the ultraviolet sensitive negative epoxy SU8. Experimental results show that the sensitivity of SU8C is one of the highest among the different kinds of commercially available resists. At 50 keV energy exposure, the saturation dosage of SU8C is ∼3.8 μC/cm2 while that of PMMA is ∼500 μC/cm2. This implies that SU8C resist is suitable for large area exposure. The contrast γ can also be adjusted to near unity by adjusting the postannealing time, and this is essential for multilevel profiling. 16 level steps have been exposed in one electron beam exposure by changing the clock frequency in sequence, and a vertical profile resolution of 20 nm has been achieved. Lines as narrow as 100 nm have been produced, showing that the resist has high resolution down to the nanoscale. Hardness measurements have also been carried out, and SU8C is an order of magnitude harder than epo...
38 citations
TL;DR: In this article, field stitching errors and their effect on the single-mode characteristics of distributed feedback (DFB) lasers fabricated using electron beam lithography were investigated, and the stitching errors are associated with small-area, high-resolution electron beam exposure, which has the potential advantage of high-speed writing of laser gratings.
Abstract: Field stitching errors and their effect on the single-mode characteristics of distributed feedback (DFB) lasers fabricated using electron beam lithography were investigated. The stitching errors are associated with small-area, high-resolution electron beam exposure, which has the potential advantage of high-speed writing of laser gratings. Measurements show that the errors are composed of a systematic and a stochastic part. Their effect on the gain margin was simulated both for lambda /4 phase-shifted and optimized multiple-phase-shifted DFB lasers. Simulations show that the lasers are insensitive to the systematic part of the stitching errors if the number of errors is large enough. The stochastic part was found to give rise to a variation in gain margin of the DFB lasers. It is concluded that the field stitching accuracy in the high-resolution mode of a commercial system for electron beam lithography is sufficient to provide a high yield of single-mode lasers. However, it is essential that certain precautions be taken considering exposure conditions and that a fault tolerant laser design be used. >
38 citations