Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: In this article, a new method for computing proximity effect corrections for submicron electron-beam lithography is introduced based on a fast algorithm for shape partitioning to gain better control for resultant exposure intensity distribution across each shape in the pattern.
Abstract: A new method for computing proximity effect corrections for submicron electron‐beam lithography is introduced It is based on a fast algorithm for shape partitioning to gain better control for resultant exposure intensity distribution across each shape in the pattern By careful investigation of the intrashape and the intershape proximity effects the program supplies a means of controlling the submicron pattern delineation Values for the parameters of the double Gaussian function used in the calculation of the dose variation factors are given for a variety of exposure conditions Results of the application of the program to delineation of submicrometer patterns in PMMA and AZ 1350 resist on silicon substrate are presented
37 citations
TL;DR: Characterization using visible and ultraviolet (UV) Raman spectroscopy indicates that in both fabrication approaches, UNCD NWs maintain their intrinsic diamond structure.
Abstract: We report the fabrication of horizontally aligned ultrananocrystalline diamond (UNCD) nanowires (NWs) via two different approaches. First, with the top-down approach by using electron beam lithography (EBL) and reactive ion etching (RIE) with a photo resist layer as an etch mask. Using this approach, we demonstrate fabrication of 50 µm long UNCD NWs with widths as narrow as 40 nm. We further present an alternative approach to grow UNCD NWs at pre-defined positions through a selective seeding process. No RIE was needed either to etch the NWs or to remove the mask. In this case, we achieved UNCD NWs with lengths of 50 µm and smallest width of 90 nm respectively. Characterization of these nanowires by using scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows that the UNCD NWs are well defined and fully released, with no indication of residual stress. Characterization using visible and ultraviolet (UV) Raman spectroscopy indicates that in both fabrication approaches, UNCD NWs maintain their intrinsic diamond structure.
37 citations
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01 Jan 2014
TL;DR: In this article, the authors present a model for mask-substrate alignment via interferometric moire fringes in nanolithography processes, which can be used for low-dimensional devices and applications.
Abstract: Optical projection lithography Extreme ultraviolet (EUV) lithography Electron beam lithography Focused ion beams for nano-machining and imaging Masks for micro- and nanolithography Maskless photolithography Chemistry and processing of resists for nanolithography Directed assembly nanolithography Nanoimprint lithography Nanostructures: Fabrication and applications Nanophotonics: Devices for manipulating light at the nanoscale Nanodevices: Fabrication, prospects for low dimensional devices and applications Microfluidics: Fabrication technologies, interconnect approaches and applications Modeling of nanolithography processes Mask-substrate alignment via interferometric moire fringes Sidewall roughness in nanolithography: Origins, metrology and device effects New applications and emerging technologies in nanolithography.
37 citations
TL;DR: In this paper, a 10-nm-thick MgB 2 thin film with the superconducting transition temperature T c ǫ = 21 K was synthesized by using molecular-beam epitaxy.
Abstract: We report the fabrication of MgB 2 nanowire and its optical response. A 10-nm-thick MgB 2 thin film with the superconducting transition temperature T c = 21 K was synthesized by using molecular-beam epitaxy. The film was processed into a nanowire with a width of 300 nm and a length of 10 μm using e-beam lithography and Ar-ion milling. With a dc bias current applied close to the critical current ( I c ), the nanowire showed an electrical signal when illuminated by a laser pulse at the telecommunications wavelength.
37 citations
TL;DR: It is demonstrated that EBID-made patterned aC coating, with thickness of even a few nanometers, acts as a negative "mask" for the etching process and is sufficient for localized termination of the MaCE of silicon.
Abstract: In this work, we introduce a maskless, resist-free rapid prototyping method to fabricate three-dimensional structures using electron beam induced deposition (EBID) of amorphous carbon (aC) from a residual hydrocarbon precursor in combination with metal-assisted chemical etching (MaCE) of silicon. We demonstrate that EBID-made patterned aC coating, with thickness of even a few nanometers, acts as a negative "mask" for the etching process and is sufficient for localized termination of the MaCE of silicon. Optimal aC deposition settings and gold film thickness for fabrication of high-aspect-ratio nanoscale 3D silicon structures are determined. The speed necessary for optimal aC feature deposition is found to be comparable to the writing speed of standard Electron Beam Lithography and the MaCE etching rate is found to be comparable to standard deep reactive ion etching (DRIE) rate.
37 citations