Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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01 May 1993-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, a 2.0 μm wide channel was etched through ∼ 10 μm of PMMA (polymethyl methacrylate) using a focused 3 MeV proton beam.
Abstract: X-ray lithography mask contrast is limited by the thickness of the patterned absorber layer. This is limited by the need to use thin resist layers to maintain the high spatial resolution when fabricated using electron beam lithography (EBL) because electron scattering severely limits the minimum achievable linewidth in thick samples. A MeV proton beam suffers much less lateral scattering than a keV electron beam so higher resolutions should be possible in thick resist layers. This paper presents experimental results showing a 2.0 μm wide channel etched through ∼ 10 μm of PMMA (polymethyl methacrylate) using a focused 3 MeV proton beam. Simulations demonstrating that the minimum attainable linewidths for 3 MeV protons are ∼ 120 nm through 10 μm of PMMA are also presented.
36 citations
Patent•
11 Jan 2001TL;DR: In this paper, a method of compensating for pattern dimension variation caused by a re-scattered electron beam when an electron beam resist is exposed to the electron beam was proposed.
Abstract: The present invention relates to electron beam lithography, and is directed to a method of compensating for pattern dimension variation caused by a re-scattered electron beam when an electron beam resist is exposed to the electron beam. The method of compensating for pattern dimension variation caused by a re-scattered electron beam comprises the steps of: dividing original exposure pattens into square sections; obtaining a dose of supplemental exposure to the re-scattered electron beam; and compensation-exposing the electron beam resist so that the supplemental exposure dose may be the same for all sections. According to the present invention, the pattern dimension variation can be compensated for a re-scattering effect of the electron beam, thereby uniformly forming a fine pattern width of a more highly-integrated circuit.
36 citations
TL;DR: In this article, a low energy electron(e)-beam proximity projection lithography is proposed for integrated circuit lithography for minimum feature sizes ⩽0.1 μm, which does not suffer from the space charge effect in the electron optics column nor the proximity effect with respect to both the wafer and mask.
Abstract: Low energy electron(e)-beam proximity projection lithography is proposed for integrated circuit lithography for minimum feature sizes ⩽0.1 μm. This new e-beam lithography is similar to optical projection lithography except that photons are replaced by low energy electrons of 2 kV. The low e-beam energy permits the use of single crystal 0.5 μm thick silicon membrane masks without an absorbing metal layer of high atomic number. This membrane mask is thick enough for good heat conduction and thin enough for feature sizes ⩽0.1 μm. The mask distortion caused by the fabrication can be corrected by a fine-tuning deflector. Therefore the mask is allowed to have a residual distortion of more than 100 nm. The proposed system does not suffer from the space charge effect in the electron optics column nor the proximity effect with respect to both the wafer and mask writings, and it is fundamentally a low power lithography which needs no special cooling system. The analysis shows that the e-beam column can be made enti...
36 citations
TL;DR: In this article, the dissolution properties of modern resists (SAL605, UV6, and PMMA) in terms of development properties and surface roughness were measured for each resist for EUV and x-ray exposures.
Abstract: Extreme ultraviolet lithography (EUVL) is a next generation lithography technology aimed at critical dimension of 70 nm and below. It is important to characterize the imaging properties of the resist in this wavelength range. In this article we present results of EUVL and x-ray lithography studies of the dissolution properties of modern resists (SAL605, UV6, and PMMA) in terms of development properties and surface roughness. The exposure response curves and surface roughness were measured for each resist for EUV and x-ray exposures. We find that the absorbed dose can be used as a common parameter to compare exposure response curves from EUV and x ray on the same scale. We also find that the surface roughness is a specific property of each resist system. The relative importance of shot noise effects on roughness is discussed.
36 citations
07 Jul 1997
TL;DR: In this paper, an implementation of a simple, semi-empirical resist model into an OPC algorithm, which up to now uses aerial image simulation, is described, assuming that the main component of proximity effects comes from the aerial image.
Abstract: The implementation of a simple, semi-empirical resist model into an OPC algorithm, which up to now uses aerial image simulation, is described. The model assumes that the main component of proximity effects comes from the aerial image. It uses two pattern density functions to describe the shift in edge placement due to resist and etching processes. Besides the parameters for the aerial image (numerical aperture, coherence, wavelength, lens aberrations, defocus, etc.), the model needs only four additional parameters. The model is tested using resist simulation and electrical linewidth measurement data from fully processed testwafers. For linewidths of 350 nm and larger, printed with i-line lithography into a standard i-line resist, the OPC algorithm with the implemented model reduces proximity effects to less than 10 nm. A similar performance is indicated by preliminary data of electrical linewidth measurements.
36 citations