Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

6 nm half-pitch lines and 0.04 νm 2 static random access memory patterns by nanoimprint lithography

Abstract: A key issue in nanoimprint lithography (NIL) is determining the ultimate pitch resolution achievable for various pattern shapes and their critical dimensional control. To this end, we demonstrated the fabrication of 6 nm half-pitch gratings and 0.04 µm2 cell area SRAM metal interconnects with 20 nm line half-pitch in resist by NIL. The mould for the 6 nm half-pitch grating was fabricated by cleaving a GaAs /Al0.7Ga0.3As superlattice grown on GaAs with molecular beam epitaxy, and selectively etching away the Al0.7Ga0.3As layers in dilute hydrofluoric acid. The mould for the 0.04 µm2 SRAM metal interconnects was fabricated in silicon dioxide using 35 kV electron beam lithography with polystyrene as a negative resist and a reactive ion etch with the resist as mask. Imprints from both moulds showed excellent fidelity and critical dimension control.

III-nitride photonic crystals

Abstract: We report the achievement of nanofabrication and characterization of a triangular lattice array of photonic crystals (PCs) with diameter/periodicity as small as 100/180 nm on an InGaN/GaN multiple quantum well using electron-beam lithography and inductively coupled plasma dry etching. Optical measurements of the PCs performed using near-field scanning optical microscopy showed a 60° periodic variation with the angle between the propagation direction of emission light and the PCs lattice. An unprecedented maximum enhancement factor of 20 was obtained for the emission light intensity at wavelengths as short as 475 nm at room temperature with emission light parallel to the Γ–K direction of the PCs lattice. The implications of these results to nitride-based optoelectronic devices, particularly in improving the light extraction efficiency in light-emitting diodes both for blue/green as well as UV emitters, are discussed.

Athermal silicon microring resonators with titanium oxide cladding

Abstract: We describe a novel approach for CMOS-compatible passively temperature insensitive silicon based optical devices using titanium oxide cladding which has a negative thermo-optic (TO) effect. We engineer the mode confinement in Si and TiO2 such that positive TO of Si is exactly cancelled out by negative TO of TiO2. We demonstrate robust operation of the resulting device over 35 degrees.

Bistable nanowire for micromechanical memory

Abstract: We present a micromechanical device designed to be used as a non-volatile mechanical memory. The structure is composed of a suspended slender nanowire (width: 100 nm, thickness: 430 nm, length: 8 to 30 ?m) clamped at both ends. Electrodes are placed on each side of the nanowire to (1) actuate the structure during the data writing and erasing mode and (2) determine its position by measuring the capacitive bridge in the reading mode. The structure is patterned by electron beam lithography on a pre-stressed thermally grown silicon dioxide layer. When later released by plasma etching, the stressed material relaxes and the beam buckles by itself to a position of lower energy. These symmetric bistable Euler beams exhibit two stable deformed. This paper presents the microfabrication process and analysis of the static buckling of nanowires. Snapping of these nanowires from one stable position to another by mechanical or electrical means will also be discussed.

Ten- to 50-nm-long quasi-ballistic carbon nanotube devices obtained without complex lithography

Abstract: A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths of ≈10–50 nm between metal contacts. Large numbers of such short devices are obtained without the need of complex tools such as electron beam lithography. Metallic SWCNTs with lengths of ≈10 nm, near the mean free path of lop ≈ 15 nm for optical phonon scattering, exhibit nearly ballistic transport at high biases and can carry unprecedented 100-μA currents per tube. Semiconducting SWCNT fieldeffect transistors with ≈50-nm channel lengths are routinely produced to achieve quasi-ballistic operations for molecular transistors. The results demonstrate highly length-scaled and high-performance interconnects and transistors realized with SWCNTs.