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Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.


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Proceedings ArticleDOI
TL;DR: A modified 28nm- STI-like patterning platform for silicon photonics in 300mm Silicon-On-Insulator wafer technology and demonstrates superior performance both in terms of dimensional uniformity and device functionality compared to 248nm- or standard 193nmbased patterning in high-volume manufacture platform.
Abstract: Large-scale photonics integration has been proposed for many years to support the ever increasing requirements for long and short distance communications as well as package-to-package interconnects. Amongst the various technology options, silicon photonics has imposed itself as a promising candidate, relying on CMOS fabrication processes.. While silicon photonics can share the technology platform developed for advanced CMOS devices it has specific dimension control requirements. Though the device dimensions are in the order of the wavelength of light used, the tolerance allowed can be less than 1% for certain devices. Achieving this is a challenging task which requires advanced patterning techniques along with process control. Another challenge is identifying an overlapping process window for diverse pattern densities and orientations on a single layer. In this paper, we present key technology challenges faced when using optical lithography for silicon photonics and advantages of using the 193nm immersion lithography system. We report successful demonstration of a modified 28nmSTI-like patterning platform for silicon photonics in 300mm Silicon-On-Insulator wafer technology. By careful process design, within-wafer CD variation (1sigma) of 20 % from the best propagation loss reported for this cross-section fabricated using e-beam lithography. By using a single-mode low-confinement waveguide geometry the loss is further reduced to ~0.12 dB/cm. Secondly, we present improvement in within-device phase error in wavelength selective devices, a critical parameter which is a direct measure of line-width uniformity improvement due to the 193nm immersion system. In addition to these superior device performances, the platform opens scenarios for designing new device concepts using sub-wavelength features. By taking advantage of this, we demonstrate a cost-effective robust single-etch sub-wavelength structure based fiber-chip coupler with a coupling efficiency of 40 % and high-quality (1.1x105) factor wavelength filters. These demonstrations on the 193nm immersion lithography show superior performance both in terms of dimensional uniformity and device functionality compared to 248nm- or standard 193nmbased patterning in high-volume manufacture platform. Furthermore, using the wafer and patterning technology similar to advanced CMOS technology brings silicon photonics closer toward an integrated optical interconnect.

35 citations

Proceedings ArticleDOI
TL;DR: In this paper, a strategy for arbitrary deep profile generation as well as results were achieved by using single and combined technologies of special gray scale masks (based on HEBS glass), e-beam lithography and photolithography.
Abstract: The fabrication of surface profile may become an interesting technology in the field of micro optics and micromachining. Recently, surface profiles are known and widely used in optics, especially in diffractive optics. In the last few years the demand on deep and arbitrarily shape profiles increased drastically. Laser beam writing and e-beam writing are technologies suitable for the fabrication of such profiles, but only for a limited range of profile depth. Photolithography is also able to realize surface profiles, much deeper profiles can be realized by combining of different technologies. In this paper we report about a strategy for arbitrary deep profile generation as well as results we achieved by using single and combined technologies of special gray scale masks (based on HEBS glass), e-beam lithography and photolithography.

35 citations

Journal ArticleDOI
TL;DR: In this paper, the feasibility of a high-absorption resist process was investigated by a simulation based on EUV sensitization mechanisms, and it was shown that fourfold enhancement of polymer absorption is feasible without side wall degradation, although it is necessary to reduce the resist thickness to 20 nm.
Abstract: The strong photoabsorption of typical backbone polymers such as poly(4-hydroxystyrene) (PHS) has been a concern in extreme ultraviolet (EUV) lithography. The development of highly sensitive chemically amplified resists by polymer absorption enhancement seems an unacceptable strategy for overcoming this problem because the side wall angle is basically determined by the gradient of energy absorption, namely the absorption coefficient of the polymer. In this study, the feasibility of a high-absorption resist process was investigated by a simulation based on EUV sensitization mechanisms. Compared with PHS-based resists, the fourfold enhancement of polymer absorption is feasible without side wall degradation partly due to the long migration range of secondary electrons, although it is necessary to reduce the resist thickness to 20 nm.

35 citations

Journal ArticleDOI
TL;DR: An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators and the fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy.
Abstract: In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C60 fullerene. The addition of C60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3 dB/cm has been demonstrated.

35 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202384
2022163
2021108
2020161
2019174
2018204