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Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.


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Journal ArticleDOI
TL;DR: The experiment results have shown that the hierarchical anisotropy and isotropy surface structures can be fabricated by this method with the control of the parameters of each incident beam, which is in accordance with the theoretical analysis and computer simulations.
Abstract: This paper presents a facile approach for the rapid and maskless fabrication of hierarchical structures by multibeam laser interference. In the work, three- and four-beam laser interference lithographies were proposed to fabricate ordered multiscale surface structures instead of six or more beam interference with a complicated system setup. The pitch and shape of hierarchical structures can be controlled by adjusting the parameters of incident light. The experiment results have shown that the hierarchical anisotropy and isotropy surface structures can be fabricated by this method with the control of the parameters of each incident beam, which is in accordance with the theoretical analysis and computer simulations.

34 citations

Patent
20 Aug 2015
TL;DR: In this article, the system for drawing a pattern on a resist layer covering a semiconductor wafer, comprising an electron gun housing unit provided with a plurality of small-sized electron guns, is described.
Abstract: The system for drawing a pattern on a resist layer covering a semiconductor wafer, comprising an electron gun housing unit provided with a plurality of small-sized electron guns (wherein the housing unit has a hollow column section for releasing an electron beam, and a micro deflection unit is disposed inside for adjusting the inclination of the electron beam), a movable stage capable of moving in the X-Y directions, a wafer stage disposed on the movable stage to support a semiconductor wafer, a mask wafer having struts on its rear side for supporting membranes on which a pattern to be transferred is formed, a mask stage for holding the mask wafer, a matching detection unit for detecting a misalignment between the mask wafer and the semiconductor wafer, and an inclination means connected to the micro deflection unit and the matching detection unit for inclining the electron beam.

34 citations

Journal ArticleDOI
TL;DR: In this paper, the reflective electron beam lithography (REBL) system is proposed for high throughput maskless lithography, targeting five to seven wafer levels per hour throughput on average at the 45nm node, with extendibility to the 32nm node and beyond.
Abstract: The system concepts used in a novel approach for a high throughput maskless lithography system called reflective electron beam lithography (REBL) are described. The system is specifically targeting five to seven wafer levels per hour throughput on average at the 45nm node, with extendibility to the 32nm node and beyond. REBL incorporates a number of novel technologies to generate and expose lithographic patterns at estimated throughputs considerably higher than electron beam lithography has been able to achieve as yet. A patented reflective electron optic concept enables the unique approach utilized for the digital pattern generator (DPG). The DPG is a complementary metal oxide semiconductor application specific integrated circuit chip with an array of small, independently controllable metallic cells or pixels, which act as an array of electron mirrors. In this way, the system is capable of generating the pattern to be written using massively parallel exposure by ∼1×106 beams at extremely high data rates ...

34 citations

Journal ArticleDOI
TL;DR: In this paper, a bottom-up approach for the lateral alignment of semiconductor quantum dots (QDs) based on strain-driven self-organization is presented, where a buried stressor formed by partial oxidation of (Al,Ga)As layers is employed in order to create a locally varying strain field at a GaAs(001) growth surface.
Abstract: We present a “bottom-up” approach for the lateral alignment of semiconductor quantum dots (QDs) based on strain-driven self-organization. A buried stressor formed by partial oxidation of (Al,Ga)As layers is employed in order to create a locally varying strain field at a GaAs(001) growth surface. During subsequent strained layer growth, local self-organization of (In,Ga)As QDs is controlled by the contour shape of the stressor. Large vertical separation of the QD growth plane from the buried stressor interface of 150 nm is achieved enabling high optical quality of QDs. Optical characterization confirms narrow QD emission lines without spectral diffusion. V C 2012 American Institute of Physics .[ http://dx.doi.org/10.1063/1.3691251] The deterministic alignment of quantum dots (QDs) during an epitaxial growth process is mandatory for electronic and optoelectronic devices 1 based on single QDs, for example, single photon detectors 2 and non-classical light emitters. 3 The self-organized formation of coherently strained islands, e.g., QDs, by the growth of strained layers in the “Stranski-Krastanow” growth regime is a consequence of the total energy minimization of the strained layer system. 4–6 QDs are formed if the strain energy relieved by island formation surpasses the energy cost associated with newly formed surfaces and edges. 7 Therefore, a selective formation of QDs on a surface will occur if the surface exhibits sites of increased strain energy, higher strain energy relief, or lower facet formation energy during growth of a strained layer. Current techniques for QD positioning generally deploy nanometer-scale lithography techniques like electron beam lithography, 8 focused ion beam lithography, 9 local oxidation, 10 or nano-imprinting 11 in order to define nanometersized areas as exclusive nucleation sites prior to the growth of quantum dots. All these “top-down” approaches share a number of difficulties, which impact the structural and optical properties of the quantum dots. First, deterministic quantum dot nucleation is possible only within very close vertical proximity to the structural patterning. An often reported problem is the missing of QDs at shallow holes patterned on a growth surface. 8,9 Since the patterning involves etching of the surface or other invasive means, the quantum dots will be surrounded by defect sites which degrade their structural and optical quality. 12 Even though sophisticated cleaning

34 citations

Journal ArticleDOI
TL;DR: In this paper, an experimental study of GaAs etching by ICP-RIE based on Cl2:N2 chemistry is reported, where the influence of the RF source power, the chlorine dilution, the RF platen power, and the process pressure at several substrate temperatures are investigated.

34 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202384
2022163
2021108
2020161
2019174
2018204