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Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.


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Journal ArticleDOI
TL;DR: In this paper, a novel resistless lithography process using a conventional electron beam system is presented, which is based on localized heating with a focused electron beam of thin platinum layers deposited on silicon.
Abstract: A novel resistless lithography process using a conventional electron beam system is presented. Metallic lines with widths of less than 50 nm were produced on silicon substrates. The process is based on localized heating with a focused electron beam of thin platinum layers deposited on silicon. It is demonstrated that silicide formation occurs at the Pt-Si interface. By using a dilute solution of aqua regia, it is possible to obtain a sufficient difference in etch rates between exposed and unexposed regions of the platinum thin film to selectively remove only the unexposed areas.

21 citations

Journal ArticleDOI
TL;DR: In this article, a method for fabrication of nanoscale patterns in silicon nitride (SiN) using a hard chrome mask formed by metal liftoff with a negative ebeam resists (maN-2401) was presented.

21 citations

Journal ArticleDOI
TL;DR: In this paper, a high-performance membrane mask for electron projection lithography (EPL) systems is proposed, which consists of a 600-nm-thick diamond-like carbon (DLC) scatter on a DLC membrane 30-60 nm thick.
Abstract: A high-performance membrane mask for electron projection lithography (EPL) systems is proposed. The design and material selection of the mask described here were carefully executed by considering not only the lithographic performance but also various properties. The mask described in this article consists of a 600-nm-thick diamond-like carbon (DLC) scatter on a DLC membrane 30–60 nm thick. The optimum thicknesses are obtained by calculating angular distributions of the transmitted electrons by our in-house Monte Carlo simulator. It is expected to have an electron transmission of up to 80% and a beam contrast of 100% with an appropriate limiting aperture. A 1-mm-sq membrane of thickness of down to 30 nm could be successfully prepared. The high-performance membrane mask can obtain high resolution and high throughput of the EPL systems simultaneously.

21 citations

Journal ArticleDOI
TL;DR: An advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures that enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.
Abstract: We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

21 citations

Journal ArticleDOI
TL;DR: This paper addresses freely placing under ambient conditions, with fountain pen nanolithography, a 120 nm dimension line of gold nanocolloids deposited with precise registration in a 100 nm gap between two 250 nm wide conducting electrodes patterned by electron beam lithography.
Abstract: One of the pressing problems in advancing nanoelectronic applications and systems is to develop a simple means of freely connecting at a nanometric level electronic components under ambient conditions without the need for vacuum or electron or ion beam operational steps. Such environments may have detrimental effects on the molecular or biomolecular constituents of molecular electronic circuits. Although there has been defined progress in connecting structures that are of nanometric dimension, new methods in this area of nanotechnology with general applicability add to the arsenal of tools for addressing this standing problem. This paper addresses freely placing under ambient conditions, with fountain pen nanolithography, a 120 nm dimension line of gold nanocolloids deposited with precise registration in a 100 nm gap between two 250 nm wide conducting electrodes patterned by electron beam lithography.

21 citations