Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
Papers published on a yearly basis
Papers
More filters
TL;DR: Ten-level transmission phase holograms (kinoforms) manufactured in one resist layer by electron-beam lithography are reported for the first time to the authors' knowledge, and the measured hologram diffraction efficiencies were 70% for the two resist materials used.
Abstract: Ten-level transmission phase holograms (kinoforms) manufactured in one resist layer by electron-beam lithography are reported for the first time to our knowledge. The measured hologram diffraction efficiencies were 70% for the two resist materials used. This corresponds to 82% of the maximum theoretical value for these holograms and is, to our knowledge, the highest reported to date.
34 citations
TL;DR: In this paper, a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films is presented, which is obtained by direct writing of insulating Niobium oxynitride lines through the films using voltagebiased tip of an atomic force microscope.
Abstract: The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.
34 citations
34 citations
TL;DR: In this article, the luminescence and electro-optic properties of buried 25-35 nm quantum boxes have been measured using a combination of molecular beam epitaxial growth and regrowth, electron beam lithography, and dry etching.
Abstract: The luminescence and electro‐optic properties of buried 25–35 nm quantum boxes have been measured. The quantum boxes were defined by a combination of molecular beam epitaxial growth and regrowth, electron beam lithography, and dry etching. The photoluminescence from 35 nm boxes shows a blue shift of ∼15 meV compared to the bulk luminescence and an enhancement, taking into account the fill factor. An enhanced effective linear electro‐optic coefficient, rl, is observed for the quantum boxes.
34 citations
Patent•
10 Dec 2009
TL;DR: In this paper, an arrangement for the illumination of a substrate with a plurality of individually shaped, controllable particle beams, particularly for electron beam lithography in the semiconductor industry, is presented.
Abstract: The invention is directed to an arrangement for the illumination of a substrate with a plurality of individually shaped, controllable particle beams, particularly for electron beam lithography in the semiconductor industry. It is the object of the invention to find a novel possibility for illuminating a substrate with a plurality of individually shaped, controllable particle beamlets which permits a high-resolution structuring of substrates with a high substrate throughput without limiting the flexibility of the applicable structure patterns or limiting the high substrate throughput due to a required flexibility.
34 citations