Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: A negative-tone sensitive SiO2/TiO2 organic-inorganic hybrid sol-gel material was synthesized and characterized for fabrication of multilevel micro-optical elements by direct electron-beam lithography.
Abstract: A negative-tone sensitive SiO2/TiO2 organic-inorganic hybrid sol-gel material was synthesized and characterized for fabrication of multilevel micro-optical elements by direct electron-beam lithography. The exposure was carried out by an in-house modified electron-beam writing system using LEO SEM-982 with Elphy Quantum exposure beam-blanking control system at 25keV. The hybrid Sol-Gel material demonstrated a superb sensitivity for doses between 0.22μC/cm2 and 0.33μC/cm2.
33 citations
TL;DR: In this paper, the dispersion of CdSe/ZnS core/shell NCs into a layer of polymethilmethacrylate (PMMA) positive electron resist, which is patterned by means of an EBL process, is described.
33 citations
TL;DR: In this article, the authors used ultrasonically assisted development to realize ∼6 nm wide lines in calixarene resist and increased exposure dose latitude by 50% compared to conventional dip development, due to the improvement in contrast.
Abstract: Negative resist image distortion is caused by resist swelling during development and is a major problem in ultrahigh resolution electron beam lithography. This problem has been overcome through the use of ultrasonically assisted development. In addition, exposure dose latitude is increased by 50% compared to conventional dip development, due to the improvement in contrast. These advantages have been exploited in order to realize ∼6 nm wide lines in calixarene resist.
33 citations
TL;DR: In this paper, the silicon nanowire (SiNW) sensor used for gas detection by a novel SU8/SiO"2/PMMA trilayer nanoimprint technique instead of electron beam lithography (EBL).
33 citations
TL;DR: In this article, resist ashing and oxide hard mask trimming were used to fabricate experimental devices with line width beyond the limit of optical lithography or high-throughput e-beam lithography.
Abstract: We have investigated two process techniques: resist ashing and oxide hard mask trimming. A combination of ashing and trimming produces sub-30-nm MOSFET gates. These techniques require neither specific equipment nor materials. These can be used to fabricate experimental devices with line width beyond the limit of optical lithography or high-throughput e-beam lithography. They provide 25-nm gate patterns with i-line lithography and sub-30-nm pattern with e-beam lithography. A 40-nm gate channel length nMOSFET is demonstrated.
33 citations