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Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.


Papers
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Journal ArticleDOI
TL;DR: In this article, optical annealing experiments at the edges of nanopatterned graphene were performed to study the resultant edge reconstruction, and the lithographic patterning direction was orthogonal to a zigzag edge.
Abstract: We performed optical annealing experiments at the edges of nanopatterned graphene to study the resultant edge reconstruction. The lithographic patterning direction was orthogonal to a zigzag edge. μ-Raman spectroscopy shows an increase in the polarization contrast of the G band as a function of annealing time. Furthermore, transport measurements reveal a 50% increase of the GNR energy gap after optical exposure, consistent with an increased percentage of armchair segments. These results suggest that edge chirality of graphene devices can be optically purified post electron beam lithography, thereby enabling the realization of chiral graphene nanoribbons and heterostructures.

33 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of development temperatures on the performance of three mostly used e-beam resists, ZEP-520, HSQ and SAL-601, have been investigated.

33 citations

Proceedings ArticleDOI
TL;DR: Inpria as mentioned in this paper leveraged novel metal oxide materials to produce high resolution photoresists for EUV lithography with high optical density and etch resistance, which has been shown to improve photospeed and provide an update on imaging performance.
Abstract: Inpria continues to leverage novel metal oxide materials to produce high resolution photoresists for EUV lithography with high optical density and etch resistance. Our resists have previously demonstrated 13nm line/space patterns at 35 mJ/cm2, with extendibility to 10nm half-pitch.1 We have continued to improve photospeed and in this work we provide an update on imaging performance. Since practical patterns for EUV layers will be more complicated than line/space patterns, we also expand on our previous work by demonstrating 2D resist performance using N7 (7nm node) contact and block mask patterns on full field scanners. A resist model has been created and using this model comparisons are made between a metal oxide resist and CAR platforms. Based on this physical model, the impact of shot noise is examined in relation to realistic 2D features. Preliminary data on the effect on OPC of using a non-chemically amplified resist are also presented.

33 citations

Journal ArticleDOI
01 Feb 2006-Small
TL;DR: A versatile patterning approach based on electron-beam lithography (eBL) and solution deposition, termed soft-eBL, has been developed to fabricate radially stacked heterostructures of multifunctional oxides from their sol precursors.
Abstract: A versatile patterning approach based on electron-beam lithography (eBL) and solution deposition, termed soft-eBL, has been developed to fabricate radially stacked heterostructures of multifunctional oxides from their sol precursors. Well-defined nanorings of lead zirconate titanate (PZT) are fabricated on a variety of substrates such as noble metals (e.g., Au), semiconductors (e.g., Si), and oxide single crystals (e.g., SrTiO3), which were previously functionalized with appropriate self-assembled monolayers (SAMs). The undercut in the double-layer eBL resist and substrate functionalization with the SAM treatment play a vital role in the formation of the ring structures. The nanorings are then used as building block “containers” and ring-reservoirs are filled with a second sol (e.g., CoFe2O4) to form radially stacked composite ceramic heterostructures. The approach presented here does not require either feature alignment to realize heterostructures or the etching of ceramics, and is amenable to a variety of radially stacked composite heterostructures.

33 citations

Journal ArticleDOI
TL;DR: The Digital Electrostatically focused e-beam Array direct-write Lithography (DEAL) concept is currently under development at Oak Ridge National Laboratory (ORNL) as discussed by the authors, which incorporates a digitally addressable field-emission array (DAFEA) built into a logic and control integrated circuit to function as the write head for an E-beam lithography tool.
Abstract: The Digital Electrostatically focused e-beam Array direct-write Lithography (DEAL) concept is currently under development at Oak Ridge National Laboratory (ORNL). This concept incorporates a digitally addressable field-emission array (DAFEA) built into a logic and control integrated circuit to function as the write head for an e-beam lithography tool. The electrostatic focusing is integrated on the DAFEA and consists of additional grids lithographically aligned above the emitters and extraction grid, each separated by a dielectric (nominally low-temperature SiO2) layer. Prototypes of the DAFEA have been fabricated and used to test the focusing of the electron beams and to pattern lines in PMMA resist. First lithography tests have used electron energies of 500 eV to pattern lines less than 1 μm wide at a working distance of 500 μm which extrapolates to <300nm at the nominal DEAL design working distance of 100 μm. Aspects of the DEAL lithography testing and further development are discussed.

33 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202384
2022163
2021108
2020161
2019174
2018204