Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Optical dichroism of lithographically designed silver nanoparticle films.

Abstract: Films of identically shaped, elongated, and parallel-oriented metal nanoparticles arranged in a regular pattern upon a transparent substrate were produced by use of electron-beam lithography. Because of the strong difference in the particles' polarizability components, the optical extinction spectra show strong dichroism. Moreover, one can shift the spectral position of the extinction maximum in a wide range from 480 to 600 nm by variation of the particles' aspect ratio. This result suggests that designed metal particle films can be used as artificial optical thin-film media.

Sublithographic nanofabrication technology for nanocatalysts and DNA chips

Abstract: We describe parallel processes for nanometer pattern generation on a wafer scale with resolution comparable to the best electron beam lithography. Sub-10 nm linewidth is defined by a sacrificial ultrathin film deposited by low pressure chemical vapor deposition (LPCVD), in a process similar to formation of gate sidewall spacers in CMOS processing. We further demonstrate a method called iterative spacer lithography (ISL), in which the process is repeated multiple times with alternating materials in order to multiply the pattern density. Silicon structures with sub-10 nm width fabricated by this process were used as a mold in nanoimprint lithography and lift-off patterning of sub-30 nm platinum nanowires for use in experiments on chemical catalysis. We also demonstrate a similar process called reversed spacer lithography (RSL) to form sub-10 nm fluid channels in poly-Si. This nanogap fluid channel device was used for label-free detection of DNA hybridization based on electrical sensing of dielectric changes...

Efficient optical elements to generate intensity weighted spot arrays: design and fabrication

Abstract: We report on the design and fabrication of fully 2-D surface relief diffraction elements that can split a single collimated beam into many beams in an arbitrary intensity distribution. These splitters were designed by computer using simulated annealing, and made into phase gratings by electron-beam lithography followed by plasma etching into quartz glass. Both two and four phase level gratings have been fabricated, allowing a wide range of uniform and weighted spot patterns to be generated. These grating elements have a measured diffraction efficiency of over 74%, with the beam intensity ratios accurate to within 1% of their target values.

Energy dissipation in a thin polymer film by electron beam scattering

Abstract: Monte Carlo calculations have been performed to determine the spatial distribution of energy dissipated in a 4000‐A‐thick film of polymethyl methacrylate (PMMA), due to an incident electron beam. The calculations were performed for 5‐, 10‐, and 20‐keV electrons on a silicon substrate and also for 20‐keV electrons on copper and gold substrates. The effect of varying the beam diameter from 250 to 3000 A was evaluated. A detailed comparison is made between the Monte Carlo results and analytic models used to predict the energy dissipated. The plural scattering model is found to be in good agreement with the Monte Carlo calculations, whereas discrepancies are found with the multiple scattering model. The large‐angle backscattering model is found to have several important limitations. Energy dissipation is calculated for the exposure of dots, isolated lines, and arrays of closely spaced lines—geometries that are of significance in electron beam lithography.

A review of ion projection lithography

Abstract: Although optical lithography has been extended to far smaller dimensions than was predicted 15 years ago, there are definite physical barriers to extending it to the minimum dimensions of 70 nm that are projected to be required 15 years from now. Both focused, point electron beams and ion beams have been used to write dimensions in resist well below 20 nm, albeit at speeds far too slow for production lithography. Projection systems, which employ a mask and, in effect, produce a large array of beams, can provide both small minimum dimensions and high throughput. Ions are particularly well suited for this because they suffer little or no scattering in the resist, the linewidth is not a strong function of dose (good process latitude), and the resist sensitivity is relatively independent to resist thickness or ion energy. IMS in Vienna, Austria has built two generations of ion projection lithography systems which have demonstrated many of the features needed for high throughput lithography. In these systems a...