Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: Carbon nanotube field effect transistors with sub-20 nm long channels and on/off current ratios of >10(6) were demonstrated in this paper, where individual single-walled carbon nanotubes with diameters ranging from 0.7 to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degrees C form the channels.
Abstract: Carbon nanotube field-effect transistors with sub-20 nm long channels and on/off current ratios of >10(6) are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degrees C form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene, and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 microA for drain-source biases of only 0.4 V.
124 citations
123 citations
TL;DR: In this paper, a single quantum well material using electron-beam lithography and SiCl4 dry etching was used to construct a ring laser with a threshold current of 24 mA, which is suitable for monolithic integration in optoelectronic circuits.
Abstract: Semiconductor ring lasers have been fabricated in single quantum well material using electron-beam lithography and SiCl4 dry etching. CW operation has been achieved in 84 μm diameter rings at a threshold current of 24 mA. This low value makes the structure very suitable for monolithic integration in optoelectronic circuits.
123 citations
TL;DR: Using optical microscopy, it is estimated that the electroluminescence from a 100 nm diameter LED comes from a region characterized by a diameter of approximately 170 nm, which apparent broadening occurs due to current spreading within a PEDOT:PSS layer which was included to aid hole injection.
Abstract: We use e-beam lithography to pattern an indium tin oxide (ITO) electrode to create arrays of conjugated-polymer LEDs, each of which has a hole-injecting contact limited to 100 nm in diameter. Using optical microscopy, we estimate that the electroluminescence from a 100 nm diameter LED comes from a region characterized by a diameter of ∼170 nm. This apparent broadening occurs due to current spreading within a PEDOT:PSS layer which was included to aid hole injection.
122 citations
TL;DR: F Fresnel zone plates were fabricated by combining electron-beam lithography with atomic layer deposition and focused ion beam induced deposition and for the first time in X-ray microscopy, features below 10nm in width were resolved.
121 citations