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Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.


Papers
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Journal ArticleDOI
TL;DR: This review presents several commonly used top-down nanofabrication techniques that have the potential to fabricate nanoparticles, including photolithography, interference lithography, electron beam lithographic, mold-based lithography (nanoimprint lithography and soft lithography), nanostencil lithographers, and nanosphere lithography.

115 citations

Journal ArticleDOI
TL;DR: In this article, two-dimensional photonic lattices, honeycomb nanostructures, fabricated by electron beam lithography with (Al,Ga)As materials, were experimentally studied.
Abstract: We have experimentally studied two‐dimensional photonic lattices, honeycomb nanostructures, fabricated by electron beam lithography with (Al,Ga)As materials Surface normal optical properties were investigated by measuring reflectance to determine the effective index of refraction and lattice stability against degradation Also, continuous wave and time‐resolved luminescence spectroscopy was used to assess electron‐hole recombination Finally, light scattering was employed to study photon coupling and propagation through the lattice These measurements show that the structures are stable, that nonradiative surface recombination is present, and that resonant coupling of light into/out of the lattice occurs at selected wavelengths satisfying a Bragg condition

113 citations

Journal ArticleDOI
TL;DR: Submicron metal patterns have been produced by galvanic deposition in openings in a monolayer resist generated by electron beam (e−beam lithography) as mentioned in this paper. But the size of the Cu patterns is affected by the galvanic exposure time and the CuSO4 concentration in the electrolyte solution.
Abstract: Submicron metal patterns have been produced by galvanic deposition in openings in a monolayer resist generated by electron beam (e‐beam) lithography. The monolayer resist is a self‐assembled docosanethiol (C22H45SH) layer adsorbed on gold. Proper removal of the thiol requires an e‐beam dose of 10–100 mC cm−2. The positive resist pattern was used to selectively deposit galvanic copper. The size of the Cu patterns is affected by the galvanic deposition time and the CuSO4 concentration in the electrolyte solution. The smallest Cu patterns produced were about 75 nm in width.

113 citations

Patent
12 Sep 2002
TL;DR: In this paper, a charge particle optical column capable of being used in a high throughput, mutli-column, multi-beam electron beam lithography system is described, which has the following properties: purely electrostatic components; small column footprint (20 mm square); multiple, individually focused charge particle beams; telecentric scanning of all beams simultaneously on a wafer for increased depth of field; and conjugate blanking of the charged particle beams for reduced beam blur.
Abstract: A charge particle optical column capable of being used in a high throughput, mutli-column, multi-beam electron beam lithography system is disclosed herein. The column has the following properties: purely electrostatic components; small column footprint (20 mm square); multiple, individually focused charge particle beams; telecentric scanning of all beams simultaneously on a wafer for increased depth of field; and conjugate blanking of the charged particle beams for reduced beam blur. An electron gun is disclosed that uses microfabricated field emission sources and a microfabricated aperture-deflector assembly. The aperture-deflector assembly acts as a perfect lens in focusing, steering and blanking a multipicity of electron beams through the back focal plane of an immersion lens located at the bottom of the column. Beam blanking can be performed using a gating signal to decrease beam blur during writing on the wafer.

112 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202384
2022163
2021108
2020161
2019174
2018204