Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Pronounced effects of anisotropy on plasmonic properties of nanorings fabricated by electron beam lithography.

Abstract: Gold nanoring dimers were fabricated via EBL with dimensions of 127.6 ± 2.5 and 57.8 ± 2.3 nm for the outer and inner diameters, respectively, with interparticle separations ranging from 17.8 ± 3.4 to 239.2 ± 3.7 nm. The coupling between the inner and outer surfaces of a single nanoring renders it very sensitive to any anisotropy. We found that anisotropy in the particle geometry and anisotropy introduced by the substrate combine to create very unique spectral features in this system.

Individual Pd nanowire hydrogen sensors fabricated by electron-beam lithography.

Abstract: We report on the hydrogen gas (H2) sensing performance of lithographically patterned Pd nanowires as a function of the nanowire thickness and H2 concentration. A combination of electron-beam lithography and a lift-off process has been utilized to fabricate four-terminal devices based on individual Pd nanowires with width w = 300 nm, length l = 10 microm, and thickness t = 20-400 nm from continuous Pd films. The variation of the resistance and sensitivity at 20 000 ppm H2 of Pd nanowires was found to be much lager than at 10 000 ppm H2, which can be explained by an alpha-beta phase transition occurring at 20 000 ppm H2. This is confirmed by the observation of hysteresis behavior in the resistance versus H2 concentration for Pd thin films. The response time was found to decrease with decreasing thickness regardless of H2 concentration due to a higher surface-to-volume ratio and a higher clamping effect. A single Pd nanowire with t = 100 nm was found to successfully detect H2 at a detection limit of 20 ppm. Our results suggest that lithographically patterned Pd nanowires can be used as hydrogen gas sensors to quantitatively detect H2 over a wide range of concentrations.

Sensing performance of precisely ordered TiO2 nanowire gas sensors fabricated by electron-beam lithography.

Abstract: In this study, electron beam lithography, rather than the most popular method, chemical synthesis, is used to construct periodical TiO2 nanowires for a gas sensor with both robust and rapid performance The effects of temperature on the sensing response and reaction time are analyzed at various operation temperatures ranging from 200 to 350 °C At the optimized temperature of 300 °C, the proposed sensor repeatedly obtained a rise/recovery time (ΔR: 09 R0 to 01 R0) of 32/175 s and a corresponding sensor response (ΔR/R0) of 217% at an ethanol injection mass quantity of 02 μg

Fabrication, modeling, and characterization of form-birefringent nanostructures.

Abstract: A 490-nm-deep nanostructure with a period of 200 nm was fabricated in a GaAs substrate by use of electron-beam lithography and dry-etching techniques. The form birefringence of this microstructure was studied numerically with rigorous coupled-wave analysis and compared with experimental measurements at a wavelength of 920 nm. The numerically predicted phase retardation of 163.3° was found to be in close agreement with the experimentally measured result of 162.5°, thereby verifying the validity of our numerical modeling. The fabricated microstructures show extremely large artificial anisotropy compared with that available in naturally birefringent materials and are useful for numerous polarization optics applications.

Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography

Abstract: Two-dimensional semiconductors, such as molybdenum disulfide (MoS2), exhibit a variety of properties that could be useful in the development of novel electronic devices. However, nanopatterning metal electrodes on such atomic layers, which is typically achieved using electron beam lithography, is currently problematic, leading to non-ohmic contacts and high Schottky barriers. Here, we show that thermal scanning probe lithography can be used to pattern metal electrodes with high reproducibility, sub-10-nm resolution, and high throughput (105 μm2 h−1 per single probe). The approach, which offers simultaneous in situ imaging and patterning, does not require a vacuum, high energy, or charged beams, in contrast to electron beam lithography. Using this technique, we pattern metal electrodes in direct contact with monolayer MoS2 for top-gate and back-gate field-effect transistors. These devices exhibit vanishing Schottky barrier heights (around 0 meV), on/off ratios of 1010, no hysteresis, and subthreshold swings as low as 64 mV per decade without using negative capacitors or hetero-stacks. Thermal scanning probe lithography can be used to pattern metal electrodes in direct contact with monolayer MoS2, creating field-effect transistors that exhibit vanishing Schottky barrier heights, high on/off ratios of 1010, no hysteresis, and subthreshold swings as low as 64 mV per decade.