Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: In this article, the authors focus on dipole antenna-coupled metal-oxide-metal diodes, which can be used for the detection of long wave infrared radiation.
Abstract: This work focuses on dipole antenna-coupled metal-oxide-metal diodes, which can be used for the detection of long wave infrared radiation. These detectors are defined using electron beam lithography and fabricated with shadow evaporation metal deposition. Along with offering complementary metal oxide semiconductor compatible fabrication, these detectors promise high speed and frequency selective detection without biasing, a small pixel footprint, and full functionality at room temperature without cooling. Direct current current-voltage characteristics are presented along with detector response to 10.6μm radiation. The detection characteristics can be tailored to provide for multispectral imaging in specific applications by modifying device geometries.
106 citations
TL;DR: In this article, active SERS (surface enhanced Raman scattering) substrates are obtained by electron beam lithography and site selective electroless deposition technique, with a considerable advantage in Raman signal enhancement and in device reproducibility.
106 citations
TL;DR: In this paper, electron beam lithography on Langmuir−Blodgett films of alkanethiol-capped gold nanoparticles is used to define nanometer scale structures of such particles.
Abstract: Electron beam lithography on Langmuir−Blodgett films of alkanethiol-capped gold nanoparticles is shown to be a viable strategy to define nanometer scale structures of such particles Sub-50 nm wide “nanowires”, the thickness of which is controlled at the single particle level, are created with e-beam doses in the mC/cm2 range It is shown that the patterns are formed by radiation-induced cross-linking of the alkyl chains and that they can be contacted and studied electrically
106 citations
TL;DR: In this paper, a new approach to the lateral confinement of electrons in the two-dimensional electron gas of GaAs•AlGaAs heterojunctions has been developed, where electrons are electrostatically confined by a shallow mesa structure etched in the upper n−doped AlGaAs layer.
Abstract: A new approach to the lateral confinement of electrons in the two‐dimensional electron gas of GaAs‐AlGaAs heterojunctions has been developed. The electrons are electrostatically confined by a shallow mesa structure etched in the upper n‐doped AlGaAs layer. This structure is fabricated using electron beam lithography and reactive ion etching. The undoped AlGaAs spacer layer is not removed in order to avoid mobility degradation and channel depletion. Long narrow channels have been made for the study of electrical transport properties. The effective channel width in the submicron range is smaller than the width of the mesa structure. Preliminary low‐temperature magnetoresistance data are presented.
105 citations
TL;DR: In this paper, an antireflection subwavelength grating (SWG) was fabricated on a polymethyl methacrylate (PMMA) by a spin-coating replication technique.
105 citations