Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Fabrication of 0.2 µm Fine Patterns Using Optical Projection Lithography with an Oil Immersion Lens

Abstract: Fine patterns are fabricated by using optical projection lithography with both an oil immersion lens of NA=1.25 and a conventional single-layer resist. Chlorobenzene soak is used in order to remove the immersion oil and to improve the side wall profile of the resist patterns. Some samples are lightly etched by O2 plasmas in order to remove a residual resist at the bottom of the resist patterns. Finally, it is found that a 0.18 µm fine resist pattern with a good edge definition can be fabricated. Al line and space pattern with a width of about 0.21 µm is also fabricated by lift-off technique.

Optically matched trilevel resist process for nanostructure fabrication

Abstract: A novel trilevel resist process has been developed which enables high‐contrast imaging of periodic structures with spatial periods down to 200 nm in thick resist on highly reflective substrates, using λ=351.1 nm argon‐ion laser exposure. The process utilizes a 200‐nm‐thick, high‐contrast, imaging resist layer, a thin (∼15‐nm) evaporated dielectric interlayer, and a 300–600‐nm‐thick bottom antireflection coating (ARC) which suppresses reflections from the substrate. Our trilevel resist scheme has been implemented in a manufacturing process which utilizes a high‐contrast interferometric lithography system for the formation of large‐area, 200–1000 nm period grating and dot array images. The choice of interlayer is the most critical feature of this process. This material must have good deposition and adhesion properties, must be optically matched to the resist and ARC, must etch quickly during the reactive‐ion etching (RIE) pattern transfer from the resist into the interlayer, must display very high selectivity to the ARC during the RIE pattern transfer into the bottom layer, and must be easily stripped after the trilevel resist structure has served its purpose. We also report on computer modeling which elucidates the factors influencing standing wave formation and present results of tests with several interlayer materials which display good optical matching and selectivities of up to 240:1 during RIE of the ARC.

SWNT growth by CVD on Ferritin-based iron catalyst nanoparticles towards CNT sensors

Abstract: We investigated the growth of individual single-walled carbon nanotubes (SWNTs) by chemical vapor deposition (CVD) on Ferritin-based Fe catalyst. According to Ferritin adsorption measurements by atomic force microscope (AFM) imaging, we show that the SWNT density on the surface can be controlled by the Ferritin concentration in the adsorption solution, which is important for SWNT integration and avoiding SWNT bundle formation. The grown SWNTs were contacted by Cr/Au layers, structured by electron beam lithography and lift-off, resulting in carbon nanotubes (CNT) based field effect transistors (FET).

Silicon nanopillars for mechanical single-electron transport

Abstract: Nanomechanical systems have been shown to accurately regulate the flow of electric current. We present the concept and demonstrate experimental operation of a vertical electromechanical single-electron transistor. The device is fabricated from silicon forming a nanopillar situated between source and drain contacts. The advantage of this concept is its straightforward manufacturing, which only includes two processing steps: Electron-beam lithography and reactive ion etching. The device operates at room temperature and at frequencies in the range of 350–400 MHz. A theoretical model of the operation of this device is given, explaining qualitatively the obtained experimental data.

In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy

Abstract: We report on the deterministic fabrication of sub-μm mesa-structures containing single quantum dots (QDs) by in situ electron-beam lithography. The fabrication method is based on a two-step lithography process: After detecting the position and spectral features of single InGaAs QDs by cathodoluminescence (CL) spectroscopy, circular sub-μm mesa-structures are defined by high-resolution electron-beam lithography and subsequent etching. Micro-photoluminescence spectroscopy demonstrates the high optical quality of the single-QD mesa-structures with emission linewidths below 15 μeV and g(2)(0) = 0.04. Our lithography method has an alignment precision better than 100 nm which paves the way for a fully deterministic device technology using in situ CL lithography.