Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: This work presents the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography and demonstrates the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip.
Abstract: The development of multinode quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates, and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of preselected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with g(2)(0) = 0.13 ± 0.02. Due to its high patterning resolution as well as spectral and spatial control, in situ electron beam lithography allows for integration of preselected quantum emitters into complex photonic systems. Being a scalable single-step approach, it p...
102 citations
TL;DR: In this article, two procedures for the construction of submicrometer microelectrodes particularly suited for use in SECM are described, where an electrochemically sharpened Pt wire is sealed in a glass capillary and exposed via mechanical polishing, and electron beam lithography using a commercial scanning electron microscope is used to produce sub-micrometers features at the tip of a polymer-coated polyshed Pt wire.
Abstract: In this report, we describe two procedures for the construction of submicrometer microelectrodes particularly suited for use in SECM. In one, an electrochemically sharpened Pt wire is sealed in a glass capillary and the submicrometer tip is exposed via mechanical polishing, and in the other, electron beam lithography using a commercial scanning electron microscope is used to produce submicrometer features at the tip of a polymer-coated polyshed Pt wire
102 citations
TL;DR: In this paper, a short-cavity laser with deep-grating distributed Bragg reflectors (DBRs) was proposed, which achieved high reflectivity over 97% even with three periods of grating.
Abstract: We have proposed a novel short-cavity laser with deep-grating distributed Bragg reflectors (DBRs). We monolithically fabricated a 0.98 µm InGaAs/AlGaAs device and 1.55 µm GaInAsP/InP device using electron beam lithography and a reactive ion beam etching technique. The lasing operation of both devices was achieved at room temperature. From a comparison of the threshold current from the experimental result with that from the theoretical result, the reflectivity of formed DBRs was estimated to be less than 30%. The theory also predicts that the ideal DBR exhibits a high reflectivity over 97% even with 3 periods of grating. It achieves lasing operation with a threshold current less than 100 µA using a cavity shorter than 10 µm. This high performance is realized by reducing the surface roughness and damage to etched sidewalls and improving the reflectivity of the DBR.
102 citations
TL;DR: In this paper, a technique combining electron beam lithography and chemical electrodeposition was proposed to produce platinum electrodes with separation between 20 and 3.5 nm, where the measurement of the conductance between the two electrodes through the electrolyte provided an accurate and reproducible way to control their separation.
Abstract: We have fabricated pairs of platinum electrodes with separation between 20 and 3.5 nm. Our technique combines electron beam lithography and chemical electrodeposition. We show that the measurement of the conductance between the two electrodes through the electrolyte provides an accurate and reproducible way to control their separation. We have tested the robustness of the electrodes by applying large voltages across them and by using them to measure the transport properties of Au nano-clusters. Our results show that the technique reliably produces metallic electrodes with a separation that bridges the minimum scale accessible by electron beam lithography with the atomic scale.
102 citations
TL;DR: In this paper, a site-control technique for InAs quantum dots (QDs) on GaAs substrates using a combination of in situ electron-beam (EB) lithography and self-organized molecular-beam epitaxy was studied.
Abstract: We studied a site-control technique for InAs quantum dots (QDs) on GaAs substrates using a combination of in situ electron-beam (EB) lithography and self-organized molecular-beam epitaxy. In small, shallow holes formed on prepatterned mesa structures by EB writing and Cl2 gas etching, QDs were selectively formed, without any formation on the flat region between the patterned holes. The density of the QDs in each hole was dependent on the hole depth, indicating that atomic steps on the GaAs surfaces act as migration barriers to In adatoms. In an array of holes including 5–6 monolayer steps, a single QD was arranged in each hole.
102 citations