Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Enhanced fluorescence from periodic arrays of silver nanoparticles.

Abstract: Electron beam lithography was used to fabricate silver nanoparticle arrays and study the effects of geometrical properties of particles on metal-enhanced fluorescence. Nanoparticle size, shape, interparticle spacing, and nominal thickness were varied in a combinatorial pattern for investigation of the particle plasmon resonance effect on enhancement of fluorescence from three different fluorophores; Fluorescein, Cy3, and Cy5. A specific geometric property for optimal enhancement from each fluorophore was determined. For interparticle spacings greater or equal to 270 nm, the enhancement matched what is expected for a single-particle model. For those particles smaller than 210 nm, the enhancement was lower than for the larger spacing in the range studied. Triangular-shaped particles gave similar enhancement to those of square-shaped particles. This combinatorial pattern by e-beam lithography was found to be useful for studying how individual parameters enhance the fluorescence that are important for rational design of enhanced fluorescence sensors.

Patterned growth of horizontal ZnO nanowire arrays.

Abstract: We report an approach to fabricating patterned horizontal ZnO nanowire arrays with a high degree of control over their dimensionality, orientation, and uniformity. Our method combines electron beam lithography and a low temperature hydrothermal decomposition. This approach opens up possibilities to fabricate ZnO NW array based strain and force sensors, two-dimensional photonic crystals, integrated circuit interconnects, and alternative current nanogenerators.

Arrayed miniature electron beam columns for high throughput sub-100 nm lithography

Abstract: In recent years, considerable progress has been made on an approach based on a novel concept which combines scanning tunneling microscope, microfabricated lenses, and field emission technologies to achieve microminiaturized low‐voltage electron beam columns with performance surpassing the conventional column. High throughput lithography is a potentially very important application for these microfabricated columns which measure only millimeters in dimensions. This is to be achieved using an array of these minicolumns in parallel in a multibeam mode with one or more columns per chip. The low‐voltage operation is attractive because proximity effect corrections may not need to be applied. In addition, an arrayed microcolumn system also has the potential of reducing the cost of the overall system through the compaction of the mechanical system. The throughout advantages for such an arrayed system based on different beam forming optics and pattern generation approaches will be discussed. In addition to lithography, a wide range of other applications for such an arrayed system such as testing, metrology, storage, etc., can also be considered.

Fabrication of sub‐10 nm structures by lift‐off and by etching after electron‐beam exposure of poly(methylmethacrylate) resist on solid substrates

Abstract: Sub‐10 nm structures were fabricated by lift‐off and by etching following electron‐beam exposure of poly(methylmethacrylate) (PMMA) resist on solid semiconductor substrates. Electron beam lithography at 80 kV with a beam diameter smaller than 5 nm was used to expose PMMA resist on either Si or GaAs substrates. The exposed resist was developed with a 3:7 cellosolve:methanol mixture in an ultrasonic bath for 5 s followed by rinsing in IPA and blown dry with pure nitrogen. Ultrasonic agitation during development was found to be essential for forming sub‐10 nm structures in PMMA. The patterned PMMA resist was used either as a lift‐off mask or an etching mask and successful transfer of the pattern to the substrates was achieved. For lift‐off an ionized beam deposition method, which gives smaller grain size and better adhesion of the metal film to the substrate, was used to deposit a layer of AuPd. Metal dots with sub‐10 nm diam and metal structures with sub‐10 nm gaps were fabricated. For sub‐10 nm etched structures reactive ion etching was used to transfer either the PMMA pattern or the lift‐off metal pattern to either Si or GaAs substrates. Etched lines and pillars with dimensions smaller than 10 nm were obtained.

Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices

Abstract: We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm 2 /(V·s).