Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Highly conducting patterned Pd nanowires by direct-write electron beam lithography.

Abstract: Palladium hexadecylthiolate is shown to serve as a negative-tone direct-write electron resist to produce nanopatterns down to 30 nm. The written patterns do not deviate much from the precursor in composition, while a post-treatment at 230 °C in air produced metallic Pd nanowires with residual carbon less than 10% and resistivity close to the bulk value, a desirable property of interconnects in nanocircuitry. The as-written patterns contain small nanocrystals (<5 nm) in a hydrocarbon matrix, which upon annealing aggregate to form well-connected networks of larger nanocrystals (5–15 nm), thus giving rise to metallic conductivity.

Nanofabrication of photonic lattice structures in GaAs/AlGaAs

Abstract: The nanofabrication of two‐dimensional photonic lattice structures in GaAs/AlGaAs is reported. The nanofabrication procedure combines direct‐write electron‐beam lithography and reactive‐ion‐beam etching to achieve etched features as small as 50 nm. The lattice comprises a hexagonal array of air cylinders etched into a semiconductor surface with a refractive index contrast of 3.54. A range of air volume fractions from 14% to 84% was investigated. The lithographic, masking, and etching processes necessary to fabricate the lattice are described along with practical limitations to achieving a lattice of arbitrary air volume fraction. Initial results from optical characterization of the lattice are also presented.

Semiconductor device and a manufacturing method of the same

Abstract: There is disclosed a method for forming micro patterns in a semiconductor integrated circuit device with high productivity and high accuracy. A photolithography having high throughput and electron beam lithography using a reticle and having relatively high throughput and high resolution are selectively used so as to obtain highest throughput while satisfying accuracy and resolution required for each product/layer. In the case of using the electron beam lithography, a non-complementary reticle and a complementary reticle are selectively used so as to obtain highest throughput while satisfying required accuracy and resolution. Thus, productivity and integration can be improved for the semiconductor integrated circuit device.

Nanofabrication of densely packed metal-polymer arrays for surface-enhanced Raman spectrometry.

Abstract: A key element to improve the analytical capabilities of surface-enhanced Raman spectroscopy (SERS) resides in the performance characteristics of the SERS-active substrate. Variables such as shape, size, and homogeneous distribution of the metal nanoparticles throughout the substrate surface are important in the design of more analytically sensitive and reliable substrates. Electron-beam lithography (EBL) has emerged as a powerful tool for the systematic fabrication of substrates with periodic nanoscale features. EBL also allows the rational design of nanoscale features that are optimized to the frequency of the Raman laser source. In this work, the efficiency of EBL fabricated substrates are studied by measuring the relative SERS signals of Rhodamine 6G and 1,10-phenanthro-line adsorbed on a series of cubic, elliptical, and hexagonal nanopatterned pillars of ma-N 2403 directly coated by physical vapor deposition with 25 nm films of Ag or Au. The raw analyte SERS signals, and signals normalized to metal nanoparticle surface area or numbers of loci, are used to study the effects of nanoparticle morphology on the performance of a rapidly created, diverse collection of substrates. For the excitation wavelength used, the nanoparticle size, geometry, and orientation of the particle primary axis relative to the excitation polarization vector, and particularly the density of nanoparticles, are shown to strongly influence substrate performance. A correlation between the inverse of the magnitude of the laser backscatter passed by the spectrometer and SERS activities of the various substrate patterns is also noted and provides a simple means to evaluate possible efficient coupling of the excitation radiation to localized surface plasmons for Raman enhancement.

Fabrication of three-dimensional photonic crystal with alignment based on electron beam lithography

Abstract: We demonstrate the fabrication of a three-dimensional woodpile photonic crystal in the near-infrared using a layer-by-layer approach involving electron beam lithography and spin on glass planarization. The alignment accuracy between the first and the fifth layer is within 10% of the lattice spacing as measured from cross section scanning-electron-microscopy images. Optical reflectivity measurements reveal peaks consistent with the photonic gap frequency. The method offers a way of rapid prototyping full three-dimensional photonic band gap devices with considerable flexibility of materials choice. Moreover, lattice structure that can operate at wavelengths into the visible can be fabricated using this approach.