Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Efficient waveguide-integrated tunnel junction detectors at 1.6 mum.

Abstract: Near-infrared detectors based on metal-insulator-metal tunnel junctions integrated with planarized silicon nanowire waveguides are presented, which we believe to be the first of their kind. The junction is coupled to the waveguide via a thin-film metal antenna feeding a plasmonic travelling wave structure that includes the tunnel junction. These devices are inherently broadband; the design presented here operates throughout the 1500–1700 nm region. Careful design of the antenna and travelling wave region substantially eliminates losses due to poor mode matching and RC rolloff, allowing efficient operation. The antennas are made from multilayer stacks of gold and nickel, and the active devices are Ni-NiO-Ni edge junctions. The waveguides are made via shallow trench isolation technology, resulting in a planar oxide surface with the waveguides buried a few nanometres beneath. The antennas are fabricated using directional deposition through a suspended Ge shadow mask, using a single level of electron-beam lithography. The waveguides are patterned with conventional 248-nm optical lithography and reactive-ion etching, then planarized using shallow-trench isolation technology. We also present measurements showing overall quantum efficiencies of 6% (responsivity 0.08 A/W at 1.605 µm), thus demonstrating that the previously very low overall quantum efficiencies reported for antenna-coupled tunnel junction devices are due to poor electromagnetic coupling and poor choices of antenna metal, not to any inherent limitations of the technology.

High-resolution electron beam lithography and DNA nano-patterning for molecular QCA

Abstract: Electron beam lithography (EBL) patterning of poly(methylmethacrylate) (PMMA) is a versatile tool for defining molecular structures on the sub-10-nm scale. We demonstrate lithographic resolution to about 5 nm using a cold-development technique. Liftoff of sub-10-nm Au nanoparticles and metal lines proves that cold development completely clears the PMMA residue on the exposed areas. Molecular liftoff is performed to pattern DNA rafts with high fidelity at linewidths of about 100 nm. High-resolution EBL and molecular liftoff can be applied to pattern Creutz-Taube molecules on the scale of a few nanometers for quantum-dot cellular automata.

Fabrication of high frequency two-dimensional nanoactuators for scanned probe devices

Abstract: The authors have developed an integrated silicon process that uses suspended single crystal silicon (SCS) structures to fabricate x-y capacitive translators and high aspect ratio conical tips for scanned probe devices. The integrated nanomechanical device design and the process sequence include methods to form integrated tunneling tip pairs and to produce electrical isolation, contacts, and conductors. Each device occupies a nominal area of 40 mu m*40 mu m. These devices include a novel self-aligned tip-above-a-tip tunneling structure and capacitive x-y translators defined by electron beam lithography and the thermal oxidation of silicon. The x-y translators produce a maximum x-y displacement of +or-200 nm for an applied voltage of 55 V. The low mass (2*10/sup -13/ kg), rigid structure has a measured fundamental mechanical resonant frequency of 5 MHz. >

Solar-blind deep-UV band-pass filter (250-350 nm) consisting of a metal nano-grid fabricated by nanoimprint lithography

Abstract: We designed, fabricated and demonstrated a solar-blind deep-UV pass filter, that has a measured optical performance of a 27% transmission peak at 290 nm, a pass-band width of 100 nm (from 250 to 350 nm), and a 20dB rejection ratio between deep-UV wavelength and visible wavelength. The filter consists of an aluminum nano-grid, which was made by coating 20 nm Al on a SiO(2) square grid with 190 nm pitch, 30 nm linewidth and 250 nm depth. The performances agree with a rigorous coupled wave analysis. The wavelength for the peak transmission and the pass-bandwidth can be tuned through adjusting the metal nano-grid dimensions. The filter was fabricated by nanoimprint lithography, hence is large area and low cost. Combining with Si photodetectors, the filter offers simple yet effective and low cost solar-blind deep-UV detection at either a single device or large-area complex integrated imaging array level.

Stable integration of isolated cell membrane patches in a nanomachined aperture

Abstract: We present a method for integrating an isolated cell membrane patch into a semiconductor device. The semiconductor is nanostructured for probing native cell membranes for scanning probe microscopy in situ. Apertures were etched into suspended silicon-nitride layers on a silicon substrate using standard optical lithography as well as electron-beam lithography in combination with reactive ion etching. Apertures of 1 μm diam were routinely fabricated and a reduction in size down to 50 nm was achieved. The stable integration of cell membranes was verified by confocal fluorescence microscopy in situ.