Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Electromigration in self-organized single-crystalline silver nanowires

Abstract: We present electromigration experiments on single-crystalline silver nanowires. The wires were grown on 4° vicinal silicon (100) substrates by self-organization and were contacted by electron beam lithography. The electromigration experiments were performed in situ in a scanning electron microscope at room temperature with constant dc conditions. In contrast to other experiments we observe void formation at the anode side of the wires. If the current is reversed, the electromigration behavior is also reversed.

High performance diffraction gratings made by e-beam lithography

Abstract: Gratings are essential components in different high performance optical set-ups such as spectrometers in space missions or ultrashort-pulse laser compression arrangements. Often such kinds of applications require gratings operating close to the technological accessible limits of today’s fabrication technology. Typical critical parameters are the diffraction efficiency and its polarization dependency, the wave-front error introduced by the grating, and the stray-light performance. Additionally, space applications have specific environmental requirements and laser application typically demand a high damage threshold. All these properties need to be controlled precisely on rather large grating areas. Grating sizes of 200 mm or even above are not unusual anymore. The paper provides a review on how such high performance gratings can be realized by electron-beam lithography and accompanying technologies. The approaches are demonstrated by different examples. The first example is the design and fabrication of the grating for the Radial-Velocity-Spectrometer of the GAIA-mission of the ESA. The second grating is a reflective pulse compression element with no wavelength resonances due to an optimized design. The last example shows a three level blazed grating in resonance domain with a diffraction efficiency of approximately 86 %.

Sub-10 nm linewidth and overlay performance achieved with a fine-tuned EBPG-5000 TFE electron beam lithography system

Abstract: For advanced nanoelectronic device concepts bridging the extended CMOS-world with the ultimate solution of single electron transistors (SETs), reliable lithography in the 10 nm (decanometer) regime has gained top priority in the past. Additionally, any type of nanoscopic 3D-device integration requires an overlay accuracy on the few-nm level. There is, however, a discrepancy between minimum feature sizes and overlay performance usually obtained with current electron beam lithography systems. We have evaluated and optimized the ultra-high resolution and overlay performance of a Leica EBPG-5000 TFE electron beam lithography system.

Surface-enhanced Raman scattering on gold quasi-3D nanostructure and 2D nanohole arrays.

Abstract: A new method was developed to fabricate unique gold quasi-3D plasmonic nanostructures on poly(dimethylsiloxane) PDMS and 2D nanohole arrays on silicon as surface-enhanced Raman scattering (SERS) substrates using electron beam lithography (EBL) with negative tone resist Ma–N 2403 and soft lithography. The size and shape of nanopillars fabricated by EBL were well controlled via different beam conditions. An enhancement factor (EF) as high as 6.4 × 105 was obtained for 4-mercaptopyridine molecules adsorbed on the gold quasi-3D nanostructure array on PDMS with 400 nm diameter, 100 nm spacing and 300 nm depth, while no enhancement was observed for the gold 2D nanohole array on silicon with the same diameter and spacing. The experimental results were confirmed by finite-difference time-domain (FDTD) calculations. Furthermore, the calculated total electric fields showed that the strong SERS exhibited by the gold quasi-3D nanostructure arrays on PDMS is due to the strong localized electric fields at the gold–air interface of the bottom gold nanodisc. The strong and reproducible SERS spectroscopy for molecules adsorbed on precisely controlled gold quasi-3D nanostructure arrays on PDMS makes it possible for the integration of SERS-active nanopatterns into microfluidic devices as chemical and biological sensors with molecular specificity.

Nanolithography Using Fullerene Films as an Electron Beam Resist

Abstract: Electron beam (e-beam) irradiation has been found to reduce the dissolution rate of evaporated C60 films in organic solvents such as monochlorobenzene, which shows that this material acts as a negative e-beam resist with a sensitivity of 1×10-2 C/cm2. It has higher dry-etch durability than conventional novolac resists. Its applicability to nanofabrication has been demonstrated by fabricating Si pillars of 20–30 nm diameter using electron cyclotron resonance microwave plasma etching and dot patterns defined in the C60 film as etching masks.