Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: Graphene nanoribbons are formed from ultrathin electrospun poly(methyl methacrylate) (PMMA) nanofibers by electron beam irradiation as discussed by the authors.
Abstract: Graphene nanoribbons are formed from ultrathin electrospun poly(methyl methacrylate) (PMMA) nanofibers by electron beam irradiation. The number and width of the graphene sheets can be controlled precisely (see figure), providing a novel method of obtaining designed graphenes. This graphitization technique could be combined with electron beam lithography in the future to obtain high-resolution patterned graphite circuits.
79 citations
28 Feb 2018
TL;DR: In this article, Niall McEvoy et al. investigated the electrical contact properties of PtSe2 channels with controlled dimensions and thicknesses, and the corresponding contact resistivity and sheet resistance were extracted from transmission line method measurements.
Abstract: Platinum diselenide (PtSe2) is an exciting new member of the two-dimensional (2D) transition metal dichalcogenide (TMD) family. It has a semimetal to semiconductor transition when approaching monolayer thickness and has already shown significant potential for use in device applications. Notably, PtSe2 can be grown at low temperature making it potentially suitable for industrial usage. Here, we address thickness-dependent transport properties and investigate electrical contacts to PtSe2, a crucial and universal element of TMD-based electronic devices. PtSe2 films have been synthesized at various thicknesses and structured to allow contact engineering and the accurate extraction of electrical properties. Contact resistivity and sheet resistance extracted from transmission line method (TLM) measurements are compared for different contact metals and different PtSe2 film thicknesses. Furthermore, the transition from semimetal to semiconductor in PtSe2 has been indirectly verified by electrical characterization in field-effect devices. Finally, the influence of edge contacts at the metal–PtSe2 interface has been studied by nanostructuring the contact area using electron beam lithography. By increasing the edge contact length, the contact resistivity was improved by up to 70% compared to devices with conventional top contacts. The results presented here represent crucial steps toward realizing high-performance nanoelectronic devices based on group-10 TMDs. Transport measurements on channels of layered PtSe2 give insight into the realization of high-performance nanoelectronic PtSe2 devices. A team led by Niall McEvoy at Trinity College Dublin investigated the electrical contact properties of PtSe2 channels with controlled dimensions and thicknesses. Electron beam lithography was used to fabricate structures with different contact metals and different PtSe2 film thicknesses, and the corresponding contact resistivity and sheet resistance of the PtSe2 devices were extracted from transmission line method measurements. The charge-transport characteristics of the PtSe2 devices revealed that edge-contacted structures are able reduce the contact resistivity when compared to conventional devices with top contacts, thanks to enhancement of the carrier injection at the contacts. These results may pave the way to optimal design of PtSe2 nanoelectronic devices.
79 citations
TL;DR: The proposed DiVa (Distributed Variable shaped beam system) is projected to be capable of writing at a speed of 5.2 cm 2 /s with 1000 shaped beams, if this can be achieved in practice, it will open up the possibility of mainstream manufacturing of VLSI circuits using maskless e-beam lithography.
78 citations
TL;DR: In this paper, a deterministic fabrication of sub-um mesa structures containing single quantum dots by in-situ electron-beam lithography was reported. But the fabrication method is based on a two-step lithography process using a low-temperature cathodoluminescence (CL) spectroscopy setup.
Abstract: We report on the deterministic fabrication of sub-um mesa structures containing single quantum dots by in-situ electron-beam lithography. The fabrication method is based on a two-step lithography process using a low-temperature cathodoluminescence (CL) spectroscopy setup. In the first step the position and spectral features of single InGaAs quantum dots (QDs) are detected by CL. Then circular sub-um mesa-structures are exactly defined by high-resolution electron-beam lithography and subsequent etching in the second step. CL spectroscopy and micro-photoluminscence spectroscopy demonstrate the high optical quality of the single-QD mesa-structures with emission linewidths below 15 ueV and g(2)(0) = 0.04. Our lithography method allows for an alignment precision better than 100 nm which paves the way for a fully-deterministic device technology using in-situ CL lithography.
78 citations
TL;DR: The design, fabrication and characterization of Bragg reflectors on silicon-on-insulator rib waveguides are presented, and a reflectivity larger than 80% over a bandwidth of 0.8 nm with an insertion loss of only 0.5 dB are demonstrated.
Abstract: We present the design, fabrication and characterization of Bragg reflectors on silicon-on-insulator rib waveguides. The fabrication is based on a new double lithographic process, combining electron-beam lithography for the grating and photolithography for the waveguides. This process allows the realization of low loss reflectors, which were fully characterized. The influence of the etching depth and of the waveguide geometry on the reflector performance is considered. We demonstrate a reflectivity larger than 80% over a bandwidth of 0.8 nm with an insertion loss of only 0.5 dB. A thermal tunability of the device is also considered, showing that a shift of the reflected wavelength of 77 pm/K is possible.
78 citations