Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: In this paper, laser induced backside wet etching of quartz was used for microstructuring of quartz with an XeCl or KrF excimer laser at laser fluences well below the damage threshold of quartz for these wavelengths.
77 citations
TL;DR: A reliable fabrication method is demonstrated to produce plasmonic dipole nanoantennas with gap values in the range of 3.5-20 nm and a reproducibility within 1 nm, in agreement with finite element simulations.
Abstract: We demonstrate a reliable fabrication method to produce plasmonic dipole nanoantennas with gap values in the range of 3.5–20 nm. The method combines electron beam lithography to create gold nanorods and helium focused ion beam milling to cut the gaps. Results show a reproducibility within 1 nm. Scattering spectra of antennas show a red shift of resonance wavelengths and an increase of the intensity of resonance peaks with a decrease of the gap size, which is in agreement with finite element simulations. The measured refractive index sensitivity was about 250 nm per refractive index unit for antennas with gap values below 5 nm.
77 citations
TL;DR: In this article, a negative-tone calixarene resist was used to print dense line/space patterns with half-pitches as small as 12.5nm in a negativetone resist using extreme ultraviolet (EUV) interference lithography, which is illuminated with spatially coherent radiation from a synchrotron source.
Abstract: We have printed dense line/space patterns with half-pitches as small as 12.5nm in a negative-tone calixarene resist using extreme ultraviolet (EUV) interference lithography. The EUV interference setup which is based on transmission diffraction gratings is illuminated with spatially coherent radiation from a synchrotron source. The results show the extendibility of EUV lithography to printing features measuring less than 15nm in size. We discuss the potential impact of effects such as photoelectron blur and shot noise in high-resolution EUV lithography.
77 citations
TL;DR: It is demonstrated that an electric field of ~200 V/μm is able to extract current from the flat part of MoS2 bilayers, which can therefore be conveniently exploited for field emission applications even in low field enhancement configurations.
Abstract: We report the electrical characterization and field emission properties of MoS
2
bilayers deposited on a SiO
2
/
Si
substrate Current–voltage characteristics are measured in the back-gate transistor configuration, with Ti
contacts patterned by electron beam lithography We confirm the n-type character of as-grown MoS
2
and we report normally-on field-effect transistors Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode We demonstrate that an electric field of ~
200
V
/
μ
m
is able to extract current from the flat part of MoS
2
bilayers, which can therefore be conveniently exploited for field emission applications even in low field enhancement configurations We show that a Fowler–Nordheim model, modified to account for electron confinement in two-dimensional (2D) materials, fully describes the emission process
76 citations
TL;DR: In this article, a shadow mask method was used to fabricate electrodes with nanometer scale separation, which can be extended to gap sizes of 1 nm and even more than 20 nm.
Abstract: We present a simple shadow mask method to fabricate electrodes with nanometer scale separation. Metal wires with gaps are made by incorporating multiwall carbon nanotubes or single-wall carbon nanotube (SWNT) bundles into a trilayer electron beam lithography process. The simple, highly controllable, and scaleable method has been used to make gaps with widths between 20 and 100 nm and may be extended to gap sizes of 1 nm. We report electron transport measurements of individual SWNTs bridging nanogaps with electrode spacings of approximately 20 nm. Metallic SWNTs exhibit quantum dot behavior with an 80 meV charging energy and a 20 meV energy level splitting. We observe a strong field effect behavior in short semiconducting SWNT segments, evidence for diffusive electron transport in these samples.
76 citations