Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: In this paper, the fabrication, calculations, and transmission measurements for finite two-dimensional polymer photonic crystal (PC) slab waveguides were presented, which were fabricated from a benzocyclobutene polymer on a low refractive index substrate from Teflon.
Abstract: We present details of the fabrication, calculations, and transmission measurements for finite two-dimensional (2D) polymer photonic crystal (PC) slab waveguides, which were fabricated from a benzocyclobutene polymer on a low refractive index substrate from Teflon. A square air hole lattice (500 nm lattice constant, 300 nm hole diameter) was realized by electron beam lithography and reactive ion etching. Polarization and wavelength dependent transmission results show TE-like and TM-like stop gaps at 1.3 μm excitation wavelengths and are in good agreement with the calculated data obtained by 2D and three-dimensional finite difference time domain methods. Transmission was suppressed by 15 dB in the center of the TE-like stop gap for a PC length of ten lattice constants.
75 citations
TL;DR: In this article, a method to control the remaining resist thickness and etch depth at the resolution of 20nm for the feature sizes of 0.5mm and 1mm has been proposed.
74 citations
TL;DR: It is shown that the hole arrangement has no effect on the selectivity but can be used to force a transition from nanowire to nanotube growth by employing a highly competitive growth regime.
Abstract: In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. Thin Ti masks are structured by electron beam lithography which allows the fabrication of perfectly homogeneous GaN NW arrays with different diameters and distances. While the wurtzite NWs are found to be Ga-polar, N-polar nucleation leads to the formation of tripod structures with a zinc-blende core which can be efficiently suppressed above a substrate temperature of 870 °C. A variation of the III/V flux ratio reveals that both axial and radial growth rates are N-limited despite the globally N-rich growth conditions, which is explained by the different diffusion behavior of Ga and N atoms. Furthermore, it is shown that the hole arrangement has no effect on the selectivity but can be used to force a transition from nanowire to nanotube growth by...
74 citations
TL;DR: In this paper, the application of chemical derivatives of C60 as high-resolution electron beam resists was explored, and the results showed that these derivatives function as high resolution negative resists for electron beam lithography using monochlorobenzene as a developer.
Abstract: We have explored the application of chemical derivatives of C60 as high-resolution electron beam resists. Facile spin coating was used to produce ∼100-nm-thick films of a C60 tris adduct (three functional groups) on Si surfaces. We find that these films function as high-resolution negative resists for electron beam lithography using monochlorobenzene as a developer. The film has a sensitivity of ∼1 mC/cm2 for 20 keV electrons, an order of magnitude higher than that of C60 itself, and the dry-etch durability is much better than that of conventional novolac based electron beam resists. Features with widths of 20 nm were produced.
74 citations
TL;DR: In this paper, the authors present current status, future directions and potential applications of these microcolumns, as well as a detailed review of the current and future applications of micro-columns.
74 citations