Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: In this article, a metal oxide patternable hardmask was designed for EUV lithography, which is highly absorbing (16 μm-1) and etch resistant (>100:1 for silicon).
Abstract: This paper describes a metal oxide patternable hardmask designed for EUV lithography. The material has imaged 15-nm
half-pitch by projection EUV exposure on the SEMATECH Berkeley MET, and 12-nm half-pitch by electron beam
exposure. The platform is highly absorbing (16 μm-1) and etch resistant (>100:1 for silicon). These properties enable
resist film thickness to be reduced to 20nm, thereby reducing aspect ratio and susceptibility to pattern collapse. New
materials and processes show a path to improved photospeed. This paper also presents data for on coating uniformity,
metal-impurity content, outgassing, pattern transfer, and resist strip.
74 citations
TL;DR: Fresnel zone plates (450 nm thick Au, 25 nm outermost zone width) used as objective lenses in a full field transmission reached a spatial resolution better than 20 nm and 1.5% efficiency with 8 keV photons.
Abstract: Fresnel zone plates (450 nm thick Au, 25 nm outermost zone width) used as objective lenses in a full field transmission reached a spatial resolution better than 20 nm and 1.5% efficiency with 8 keV photons. Zernike phase contrast was also realized without compromising the resolution. These are very significant achievements in the rapid progress of high-aspect-ratio zone plate fabrication by combined electron beam lithography and electrodeposition.
74 citations
TL;DR: In this article, a multilevel surface-relief-type diffractive optical elements are designed which are capable of generating a large number of Gauss-Laguerre modes with arbitrary mode indices in different diffraction orders of the element.
73 citations
TL;DR: Yang et al. as mentioned in this paper used a combination of calculation, modeling, and experiment to investigate the relative effects of resist contrast, beam scattering, secondary electron generation, system spot size, and metrology limitations on SEBL process resolution.
Abstract: Achieving the highest possible resolution using scanning-electron-beam lithography (SEBL) has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications [F. S. Bates and G. H. Fredrickson, Annu. Rev. Phys. Chem. 41, 525 (1990); Black et al., IBM J. Res. Dev. 51, 605 (2007); Yang et al., J. Chem. Phys. 116, 5892 (2002)] have driven demand for feature sizes well into the sub-10nm domain, close to the resolution limit of the current generation of SEBL processes. In this work, the authors have used a combination of calculation, modeling, and experiment to investigate the relative effects of resist contrast, beam scattering, secondary electron generation, system spot size, and metrology limitations on SEBL process resolution. In the process of investigating all of these effects, they have also successfully yielded dense structures with a pitch of 12nm at voltages as low as 10keV.
73 citations
73 citations