Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Nanobridges of optimized YBa2Cu3O7 thin films for superconducting flux‐flow type devices

Abstract: Superconducting nanobridges of YBa2Cu3O7 thin films with widths down to w=200 nm and lengths from 0.2 to 10 μm are patterned using metal masks fabricated by electron‐beam lithography and reactive ion etching. The YBa2Cu3O7 films were dry etched by ion beam milling at minimal energies of 250 eV on a liquid‐nitrogen‐cooled sample holder. Long bridges (l=10 μm) showed superconducting features similar to those of unstructured YBa2Cu3O7 films. Short nanobridges exhibited phase‐slip center behavior up to the transition temperature of 87–89 K. Shapiro steps were observed in the current‐voltage characteristics in applied microwave fields and the critical current decreased linearly with the amplitude of the microwave field.

Fabrication of discrete nanoscaled force sensors based on single-walled carbon nanotubes

Abstract: We present a fabrication technique for discrete, released carbon-nanotube-based nanomechanical force sensors. The fabrication technique uses prepatterned coordinate markers to align the device design to predeposited single-walled carbon nanotubes (SWNTs): Atomic force microscope (AFM) images are recorded to determine spatial orientation and location of each discrete nanotube to be integrated in a nanoscaled force sensor. Electron beam lithography is subsequently used to pattern the metallic electrodes for the nanoscale structures. Diluted hydrofluoric acid etching followed by critical point drying completes the nanosized device fabrication. We use discrete, highly purified, and chemically stable carbon nanotubes as active elements. We show AFM and scanning electron microscope images of the successfully realized SWNTs embedded nanoelectromechanical systems (NEMS). Finally, we present electromechanical measurements of the suspended SWNT NEMS structures

Generation of localized strain in a thin film piezoelectric to control individual magnetoelectric heterostructures

Abstract: Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr0.52Ti0.48O3 (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the “onion” state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroic devices.

Band gap of hexagonal 2D photonic crystals with elliptical holes recorded by interference lithography

Abstract: Two-dimensional hexagonal photonic crystals can be recorded using the simple superimposition of two interference patterns rotated by 60 masculine. Such process generates high contrast masks, however, it generates elliptical cross section structures instead of cylinders. We study the PBG properties of the experimentally feasible geometries, using this technique and we demonstrate that the effect of this asymmetric shape is a reduction in the PBG map area, for TE polarization, in comparison with cylindrical structures. On the other hand, it appears a PBG for TM polarization.

Bowtie Nanoantenna with Single-Digit Nanometer Gap for Surface-Enhanced Raman Scattering (SERS)

Abstract: Sub-10-nm gaps in noble metal bowtie structures may enable strong enhancement of the near field at the gap. However, it is challenging to define such small gaps using electron beam lithography (EBL) due to the proximity effect. Here, we circumvented this problem by carrying out EBL on a thin membrane that is transparent to incident electrons and thus free from the proximity effect. Nanogaps down to 6 nm were obtained and employed for sensing application based on surface-enhanced Raman scattering (SERS). We achieved a high sensitivity at low concentration of the target molecule with a SERS enhancement factor of 107.