Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Determining the Resolution Limits of Electron-Beam Lithography: Direct Measurement of the Point-Spread Function

Abstract: One challenge existing since the invention of electron-beam lithography (EBL) is understanding the exposure mechanisms that limit the resolution of EBL. To overcome this challenge, we need to understand the spatial distribution of energy density deposited in the resist, that is, the point-spread function (PSF). During EBL exposure, the processes of electron scattering, phonon, photon, plasmon, and electron emission in the resist are combined, which complicates the analysis of the EBL PSF. Here, we show the measurement of delocalized energy transfer in EBL exposure by using chromatic aberration-corrected energy-filtered transmission electron microscopy (EFTEM) at the sub-10 nm scale. We have defined the role of spot size, electron scattering, secondary electrons, and volume plasmons in the lithographic PSF by performing EFTEM, momentum-resolved electron energy loss spectroscopy (EELS), sub-10 nm EBL, and Monte Carlo simulations. We expect that these results will enable alternative ways to improve the resol...

Reconstruction of Latent Images from Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Resist for Extreme Ultraviolet Lithography

Abstract: The line width and line edge roughness (LER) of resist patterns are related to the concentration and its gradient of chemical compounds that determine the solubility of the resist, respectively. Therefore, latent images can be obtained from the line width and LER of resist patterns. In this study, two-dimensional (exposure dose and half-pitch) matrices of resist line width and LER were analyzed on the basis of the sensitization mechanisms of chemically amplified resists used for extreme ultraviolet (EUV) lithography. In the reconstruction of latent images, the effective reaction radius for catalytic chain reaction is an important parameter. The probable range of effective reaction radius was from 0.05 to 0.2 nm. In this range, latent images were successfully reconstructed. The finding that the effective reaction radius is smaller than the typical size of a counteranion suggests that the resist performance can be improved by increasing the effective reaction radius.

Nanostructuring of silicon by electron-beam lithography of self-assembled hydroxybiphenyl monolayers

Abstract: We report the fabrication of silicon nanostructures using aromatic hydroxybiphenyl self-assembled monolayers as ultrathin (1.1 nm) negative tone electron-beam resist. The formation of the monolayer and the electron-induced crosslinking have been characterized by x-ray photoelectron spectroscopy. Nanometer size patterns were defined by electron-beam lithography in the molecular layer and transferred into silicon by wet chemical etching with potassium hydroxide. We demonstrate the fabrication of silicon line gratings with a resolution of ∼20 nm and of isolated silicon lines with linewidths down to ∼10 nm.

Fabrication of polymer photonic crystals using nanoimprint lithography

Abstract: Dense two-dimensional periodic photonic bandgap structures are produced in poly(methyl methacrylate) thin films using nanoimprint lithography (NIL). The stamp original was made by electron beam lithography. Then, a high versatility of the process was achieved by fabricating copies of the stamp original via NIL, which enables varying and optimizing both fill factors and aspect ratios independently. For reliable stamp copying over the whole structural areas, the nanorheological behaviour had to be considered. Using those stamp copies, polymeric photonic band gap structures with an aspect ratio as high as 2 were successfully replicated.