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Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.


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Book ChapterDOI
01 Jan 1997

63 citations

Journal ArticleDOI
23 Apr 2013-ACS Nano
TL;DR: Research reported in this work paves the way for producing QD microarrays with multiplexed functionalities relevant for applications in analyte sensing and cellular dynamics.
Abstract: Quantum dot (QD) based micro-/nanopatterned arrays are of broad interest in applications ranging from electronics, photonics, to sensor devices for biomedical purposes. Here, we report on a rapid, physico-chemically mild approach to generate high fidelity micropattern arrays of prefunctionalized water-soluble quantum dots using electron beam lithography. We show that such patterns retain their fluorescence and bioaffinity upon electron beam lithography and, based on the streptavidin-biotin interaction, allow for detection of proteins, colloidal gold nanoparticles and magnetic microparticles. Furthermore, we demonstrate the applicability of QD based microarray patterns differing in their shape (circles, squares, grid-like), size (from 1 to 10 μm) and pitch distance to study the adhesion, spreading and migration of human blood derived neutrophils. Using live cell confocal fluorescence microscopy, we show that pattern geometry and pitch distance influence the adhesion, spreading and migratory behavior of neutrophils. Research reported in this work paves the way for producing QD microarrays with multiplexed functionalities relevant for applications in analyte sensing and cellular dynamics.

63 citations

Journal ArticleDOI
TL;DR: In this article, the calixarene derivatives were tested as high-resolution negative resists for use in electron beam lithography and the sensitivity of these resistors ranged from 700 to 7000 μC/cm2, and the required dose for dot fabrication was about 105 electrons/dot.
Abstract: New nonpolymer materials, calixarene derivatives were tested as high‐resolution negative resists for use in electron beam lithography. Arrays of 12‐nm‐diam dots with a 25 nm pitch were fabricated easily. The sensitivity of calixarene in terms of area dose ranged from 700 to 7000 μC/cm2, and the required dose for dot fabrication was about 105 electrons/dot. The standard area dose for calixarene is almost 20 times higher than that for polymethyl methacrylate (PMMA), but the electron spot dose for dot fabrication by calixarene is almost the same as that for PMMA and other highly sensitive resists such as SAL (chemically amplified negative resist for electron beam made by Shipley). The electron spot dose for such extremely small dots does not seem to depend on standard area dose, but any resist tends to require the same dose under exposure in a 50 keV electron beam writing system. We propose a qualitative exposure model that suggests a tradeoff of dose and dot size. The calixarene seems to be promising materi...

63 citations

Journal ArticleDOI
TL;DR: Polymer-bound PAG resists have shown that the principal demerit of acid diffusion can be overcome through attachment of the PAG anion to the lithographic polymer as mentioned in this paper, which has been enough progress in resolution and sensitivity to justify the use of these materials.
Abstract: We discuss the future of resist materials for sub-20-nm lithography and believe that polymer-bound PAG-based resists will be used to 16-nm node. There has been enough progress in resolution and sensitivity to justify the use of these materials. Polymer-bound PAG resists have shown that the principal demerit of acid diffusion can be overcome through attachment of the PAG anion to the lithographic polymer. Since the introduction of this chemically amplified resist approach, we have seen steady improvement in resolution, sensitivity, and LWR. We have also seen improvement in OOB response, outgassing, and pattern collapse. There is no doubt that continuous improvement is still required for these resist systems. We believe that increasing the overall resist quantum yield for acid generation substantially improves the shot-noise problem thereby leading to faster high-resolution resist materials. Using a 0.30-NA extreme ultraviolet tool with dipole, we can achieve 22-nm hp resolution, with a 12-mJ dose and a 4.2-nm LWR.

63 citations

Journal ArticleDOI
23 May 2006-Langmuir
TL;DR: A study of electron beam lithography (EBL) patterning of a self-assembled monolayer (SAM) of the amide-containing poly(ethylene glycol) (PEG) thiol on Au to produce patterns with a resolution approaching that of single proteins.
Abstract: Controlling the spatial organization of biomolecules on solid supports with high resolution is important for a widerange of scientific and technological problems. Here we report a study of electron ...

63 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202384
2022163
2021108
2020161
2019174
2018204