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Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.


Papers
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Journal ArticleDOI
TL;DR: In this article, a scheme where transmission diffraction gratings written on a single substrate create the interfering beams possessing the required phase relations is proposed, where the relative phases of the diffracted beams are controlled by the relative positions of the gratings in the substrate plane.
Abstract: Interference lithography with multiple beams provides two-dimensional periodic patterns in a single exposure step. It is possible to obtain various symmetries and shapes such as sparse hole arrays or dots on a hexagonal grid. However, when the number of interfering beams exceeds three, the intensity pattern depends strongly on the relative phases of the beams. In this article we show that this problem can be overcome with a scheme where transmission diffraction gratings written on a single substrate create the interfering beams possessing the required phase relations. The relative phases of the diffracted beams are controlled by the relative positions of the gratings in the substrate plane. We used electron beam lithography with an interferometrically controlled stage to obtain the required precise placement of the gratings. This method enabled us to produce hexagonal and square arrays of holes where we used three and four beam configurations, respectively. Moreover, we created sparse hole arrays that have hexagonal and square symmetries with six and eight beam interference. The experiments were carried out in the extreme ultraviolet region with synchrotron radiation and with laser light in the visible spectrum. The technique requires spatially coherent light but it is achromatic and it is not sensitive to small errors in the alignment of the incoming beam.

62 citations

Journal ArticleDOI
TL;DR: In this article, ordered arrays of gold nanorods on glass substrates were fabricated with high accuracy using electron beam lithography and lift-off techniques, and these structures exhibit longitudinal mode o...
Abstract: Uniform, ordered arrays of gold nanorods on glass substrates were fabricated with high accuracy using electron beam lithography and lift-off techniques. These structures exhibit longitudinal mode o...

62 citations

Patent
07 Aug 1992
TL;DR: In this paper, a resist exposed to a micron or sub-micron pattern of highly absorbed ion beams forms a highly crosslinked barrier layer in the exposed regions of the resist surface.
Abstract: A resist exposed to a micron or sub-micron pattern of highly absorbed ion beams forms a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are then removed by a plasma etch. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist. The process allows feature definition below 1000 Angstroms using a relatively inexpensive single element low energy ion source.

62 citations

Journal ArticleDOI
TL;DR: In this article, a tungsten-hardmask-based diamond dry-etch process was proposed for fabricating diamond zone plate lenses with a high aspect ratio. But the results were limited to a scanning microscope arrangement showing sub-100nm resolution.
Abstract: The authors report on a new tungsten-hardmask-based diamond dry-etch process for fabricating diamond zone plate lenses with a high aspect ratio. The tungsten hardmask is structured by electron-beam lithography, together with Cl2/O2 and SF6/O2 reactive ion etching in a trilayer resist-chromium-tungsten stack. The underlying diamond is then etched in an O2 plasma. The authors demonstrate excellent-quality diamond gratings with half-pitch down to 80 nm and a height of 2.6 μm, as well as zone plates with a 75 μm diameter and 100 nm outermost zone width. The diffraction efficiency of the zone plates is measured to 14.5% at an 8 keV x-ray energy, and the imaging properties were investigated in a scanning microscope arrangement showing sub-100-nm resolution. The imaging and thermal properties of these lenses make them suitable for use with high-brightness x-ray free-electron laser sources.

62 citations

Journal ArticleDOI
TL;DR: In this paper, a beam of nitrogen ions can be focused to approximately 100nm using focused ion beam (FIB) technology, which is suitable for the creation of optical centres in the cavities of photonic crystals or in diamond tips for scanning magnetometry.
Abstract: The creation of nitrogen-vacancy (NV) centres in diamond is nowadays well controlled using nitrogen implantation and annealing. Although the high-resolution placement of NV centres has been demonstrated using either collimation through pierced tips of an atomic force microscope (AFM) or masks with apertures made by electron beam lithography, a targeted implantation into pre-defined structures in diamond may not be achieved using these techniques. We show that a beam of nitrogen ions can be focused to approximately 100 nm using focused ion beam (FIB) technology. The nitrogen ion beam is produced using an electron cyclotron resonance (ECR) plasma source. Combined with a scanning electron microscope, the nitrogen-FIB offers new possibilities for the targeted creation of single defects in diamond. This maskless technology is suitable for example for the creation of optical centres in the cavities of photonic crystals or in diamond tips for scanning magnetometry.

62 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202384
2022163
2021108
2020161
2019174
2018204