About: Electron diffraction is a(n) research topic. Over the lifetime, 28323 publication(s) have been published within this topic receiving 663560 citation(s).
12 Nov 1984-Physical Review Letters
Abstract: We have observed a metallic solid (Al-14-at.%-Mn) with long-range orientational order, but with icosahedral point group symmetry, which is inconsistent with lattice translations. Its diffraction spots are as sharp as those of crystals but cannot be indexed to any Bravais lattice. The solid is metastable and forms from the melt by a first-order transition.
29 Nov 2001-Journal of the American Chemical Society
TL;DR: High-temperature (300 degrees C) aging of iron-oleic acid metal complex, which was prepared by the thermal decomposition of iron pentacarbonyl in the presence of oleic acid at 100 degrees C, was found to generate monodisperse iron nanoparticles.
Abstract: The synthesis of highly crystalline and monodisperse γ-Fe2O3 nanocrystallites is reported. High-temperature (300 °C) aging of iron−oleic acid metal complex, which was prepared by the thermal decomposition of iron pentacarbonyl in the presence of oleic acid at 100 °C, was found to generate monodisperse iron nanoparticles. The resulting iron nanoparticles were transformed to monodisperse γ-Fe2O3 nanocrystallites by controlled oxidation by using trimethylamine oxide as a mild oxidant. Particle size can be varied from 4 to 16 nm by controlling the experimental parameters. Transmission electron microscopic images of the particles showed 2-dimensional and 3-dimensional assembly of particles, demonstrating the uniformity of these nanoparticles. Electron diffraction, X-ray diffraction, and high-resolution transmission electron microscopic (TEM) images of the nanoparticles showed the highly crystalline nature of the γ-Fe2O3 structures. Monodisperse γ-Fe2O3 nanocrystallites with a particle size of 13 nm also can be...
01 Dec 1992-Nature
Abstract: FOLLOWING the discovery of C60(ref. 1) and the advent of fullerene chemistry, considerable attention has been directed towards the associated cylindrical2,3 and polyhedral4,5 forms of graphite. To date, however, observations of such closed structures have been limited to the carbon system. Here we report the formation of equivalent stable structures in the layered semiconductor tungsten disulphide. After the heating of thin tungsten films in an atmosphere of hydrogen sulphide, transmission electron microscopy reveals a variety of concentric polyhedral and cylindrical structures (ranging in size from 100 nm) growing from the amorphous tungsten matrix. The closed nature of the structures is verified by electron diffraction and lattice imaging. As with the carbon system, complete closure of the tungsten disulphide layers requires the presence of structural defects (for example, edge dislocations), or the arrangement of atoms in polyhedra other than a planar hexagonal geometry.
02 Mar 2005-Nano Letters
TL;DR: Both the improved crystalline nature of films and increased but controlled demixing between the two constitutes therein after annealing explains the considerable increase of the power conversion efficiency observed in these devices.
Abstract: Transmission electron microscopy and electron diffraction are used to study the changes in morphology of composite films of poly(3-hexylthiophene) (P3HT) and a methanofullerene derivative (PCBM) in bulk heterojunction solar cells. Thermal annealing produces and stabilizes a nanoscale interpenetrating network with crystalline order for both components. P3HT forms long, thin conducting nanowires in a rather homogeneous, nanocrystalline PCBM film. Both the improved crystalline nature of films and increased but controlled demixing between the two constitutes therein after annealing explains the considerable increase of the power conversion efficiency observed in these devices.
01 Apr 1986-Journal of The Electrochemical Society
Abstract: A low temperature thermal cleaning method for Si molecular beam epitaxy (MBE) is proposed. This method consists of wet chemical treatment to eliminate carbon contaminants on Si substrates, thin oxide film formation to protect the clean Si surface from contamination during processing before MBE growth, and desorption of the thin oxide film under UHV. The passivative oxide can be removed at temperatures below 800°C. It is confirmed that Si epitaxial growth can take place on substrates cleaned by this method and that high quality Si layers with dislocations of fewer than 100/cm2 and high mobility comparable to good bulk materials are formed. Surface cleanliness, the nature of thin passivative oxide films, and cleaning processes are also studied by using such surface analytic methods as Auger electron spectroscopy, reflection high energy electron diffraction, and x‐ray photoelectron spectroscopy.