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Electron scattering

About: Electron scattering is a research topic. Over the lifetime, 4943 publications have been published within this topic receiving 91700 citations.


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Journal ArticleDOI
A. F. Mayadas1, M. Shatzkes1
TL;DR: In this paper, the total resistivity of a thin metal film is calculated from a model in which three types of electron scattering mechanisms are simultaneously operative: an isotropic background scattering (due to the combined effects of phonons and point defects), scattering due to a distribution of planar potentials (grain boundaries), and scattering by the external surfaces.
Abstract: In this paper, the total resistivity of a thin metal film is calculated from a model in which three types of electron scattering mechanisms are simultaneously operative: an isotropic background scattering (due to the combined effects of phonons and point defects), scattering due to a distribution of planar potentials (grain boundaries), and scattering due to the external surfaces. The intrinsic or bulk resistivity is obtained by solving a Boltzmann equation in which both grain-boundary and background scattering are accounted for. The total resistivity is obtained by imposing boundary conditions due to the external surfaces (as in the Fuchs theory) on this Boltzmann equation. Interpretation of published data on grain-boundary scattering in bulk materials in terms of the calculated intrinsic resistivity, and of thin-film data in terms of the calculated total resistivity suggests that (i) the grain-boundary reflection coefficient in Al is \ensuremath{\approx} 0.15, while it is somewhat higher in Cu; (ii) the observed thickness dependence of the resistivity in thin films is due to grain-boundary scattering as well as to the Fuchs size effect; and (iii) the common observation that single-crystal films possess lower resistivities than polycrystalline films may be accounted for by grain-boundary effects rather than by differences in the nature of surface scattering.

1,842 citations

Journal ArticleDOI
TL;DR: In this paper, the electron structure factor for forward scattering for a crystal containing ionized atoms is derived and a parametric fit to these is given in the range of sin θ/λ from 0.0 to 2.0 A−1.
Abstract: Kinematic X-ray and electron scattering factors, found with the use of relativistic Hartree–Fock atomic fields, are tabulated for 76 atoms and ions. Parametric fits to these are given in the range of sin θ/λ from 0.0 to 2.0 A−1. A method is developed to obtain the electron structure factor for forward scattering for a crystal containing ionized atoms.

1,613 citations

Journal ArticleDOI
TL;DR: In this paper, the authors presented new calculations of electron inelastic mean free paths (IMFPs) for 200-2000 eV electrons in 27 elements (C, Mg, Al, Si, Ti, V, Cr, Fe, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au and Bi).
Abstract: We present new calculations of electron inelastic mean free paths (IMFPs) for 200–2000 eV electrons in 27 elements (C, Mg, Al, Si, Ti, V, Cr, Fe, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au and Bi) and four compounds (LiF, SiO2, ZnS and Al2O3). These calculations are based on an algorithm due to Penn which makes use of experimental optical data (to represent the dependence of the inelastic scattering probability on energy loss) and the theoretical Lindhard dielectric function (to represent the dependence of the scattering probability on momentum transfer). Our calculated IMFPs were fitted to the Bethe equation for inelastic electron scattering in matter; the two parameters in the Bethe equation were then empirically related to several material constants. The resulting general IMFP formula is believed to be useful for predicting the IMFP dependence on electron energy for a given material and the material-dependence for a given energy. The new formula also appears to be a reasonable but more approximate guide to electron attenuation lengths.

829 citations

Journal ArticleDOI
TL;DR: In this article, a theory of the absorption fine structure starting from theoretically obtained electron-atom scattering phase shifts is presented, where the electron scattering is treated using a spherical wave expansion which takes into account the finite size of the atoms.
Abstract: The extended x-ray absorption fine structure is a consequence of the modification of the photoelectron final state due to scattering by the surrounding atoms. We present a theory of the absorption fine structure starting from theoretically obtained electron-atom scattering phase shifts. The electron scattering is treated using a spherical wave expansion which takes into account the finite size of the atoms. Multiple-scattering effects are included by classifying multiple-scattering paths by their total path lengths. Their effects are quite large but appear to make quantitative but not qualitative changes on the single-scattering contribution. The exceptional case is the fourth shell in fcc or bcc structure, where it is shadowed by the first-shell atom and is profoundly affected by forward scattering due to the first shell. This may account for the anomaly observed experimentally at the fourth-shell radius in metals. A detailed numerical calculation is carried out for copper and is shown to agree quite well with experiment.

808 citations

Journal ArticleDOI
TL;DR: In this article, the mean-free path of single-walled carbon nanotubes was inferred from the scaling of the resistance of the same nanotube with length in the low and high-bias regimes.
Abstract: Electron scattering rates in metallic single-walled carbon nanotubes are studied using an atomic force microscope as an electrical probe. From the scaling of the resistance of the same nanotube with length in the low- and high-bias regimes, the mean-free paths for both regimes are inferred. The observed scattering rates are consistent with calculations for acoustic-phonon scattering at low biases and zone boundary/optical phonon scattering at high biases.

687 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202334
202289
202177
202094
201990
201880