Electronic circuit

About: Electronic circuit is a research topic. Over the lifetime, 114293 publications have been published within this topic receiving 971590 citations.

Paper-like electronic displays: Large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inks

Abstract: Electronic systems that use rugged lightweight plastics potentially offer attractive characteristics (low-cost processing, mechanical flexibility, large area coverage, etc.) that are not easily achieved with established silicon technologies. This paper summarizes work that demonstrates many of these characteristics in a realistic system: organic active matrix backplane circuits (256 transistors) for large ( approximately 5 x 5-inch) mechanically flexible sheets of electronic paper, an emerging type of display. The success of this effort relies on new or improved processing techniques and materials for plastic electronics, including methods for (i) rubber stamping (microcontact printing) high-resolution ( approximately 1 microm) circuits with low levels of defects and good registration over large areas, (ii) achieving low leakage with thin dielectrics deposited onto surfaces with relief, (iii) constructing high-performance organic transistors with bottom contact geometries, (iv) encapsulating these transistors, (v) depositing, in a repeatable way, organic semiconductors with uniform electrical characteristics over large areas, and (vi) low-temperature ( approximately 100 degrees C) annealing to increase the on/off ratios of the transistors and to improve the uniformity of their characteristics. The sophistication and flexibility of the patterning procedures, high level of integration on plastic substrates, large area coverage, and good performance of the transistors are all important features of this work. We successfully integrate these circuits with microencapsulated electrophoretic "inks" to form sheets of electronic paper.

A 160-kilobit molecular electronic memory patterned at 10 11 bits per square centimetre

Abstract: The primary metric for gauging progress in the various semiconductor integrated circuit technologies is the spacing, or pitch, between the most closely spaced wires within a dynamic random access memory (DRAM) circuit. Modern DRAM circuits have 140 nm pitch wires and a memory cell size of 0.0408 mum(2). Improving integrated circuit technology will require that these dimensions decrease over time. However, at present a large fraction of the patterning and materials requirements that we expect to need for the construction of new integrated circuit technologies in 2013 have 'no known solution'. Promising ingredients for advances in integrated circuit technology are nanowires, molecular electronics and defect-tolerant architectures, as demonstrated by reports of single devices and small circuits. Methods of extending these approaches to large-scale, high-density circuitry are largely undeveloped. Here we describe a 160,000-bit molecular electronic memory circuit, fabricated at a density of 10(11) bits cm(-2) (pitch 33 nm; memory cell size 0.0011 microm2), that is, roughly analogous to the dimensions of a DRAM circuit projected to be available by 2020. A monolayer of bistable, [2]rotaxane molecules served as the data storage elements. Although the circuit has large numbers of defects, those defects could be readily identified through electronic testing and isolated using software coding. The working bits were then configured to form a fully functional random access memory circuit for storing and retrieving information.

Principles of power electronics

Abstract: 1. Introduction. 2. Form and Function: An Overview. 3. Introduction to Rectifier Circuits. 4. Bridge and Polyphase Rectifier Circuits. 5. Phase-Controlled Converters. 6. High-Frequency Switching dc/dc Converters. 7. Isolated High-Frequency dc/dc Converters. 8. Variable-Frequency dc/ac Converters. 9. Resonant Converters. 10. ac/ac Converters. 11. Dynamics and Control: An Overview. 12. State-Space Models. 13. Linear and Piecewise Linear Models. 14. Feedback Control Design. 15. Components: An Overview. 16. Review of Semiconductor Devices. 17. Power Diodes. 18. Power Transistors. 19. Thyristors. 20. Magnetic Components. 21. Ancillary Issues: An Overview. 22. Gate and Base Drives. 23. Thyristor Commutation Circuits. 24. Snubber Circuits and Clamps. 25. Thermal Modeling and Heat Sinking.

RF MEMS switches and switch circuits

Abstract: MEMS switches are devices that use mechanical movement to achieve a short circuit or an open circuit in the RF transmission line. RF MEMS switches are the specific micromechanical switches that are designed to operate at RF-to-millimeter-wave frequencies (0.1 to 100 GHz). The forces required for the mechanical movement can be obtained using electrostatic, magnetostatic, piezoelectric, or thermal designs. To date, only electrostatic-type switches have been demonstrated at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques. It is for this reason that this article will concentrate on electrostatic switches.

Organic transistors: two-dimensional transport and improved electrical characteristics.

Abstract: The thiophene oligomer α-hexathienylene (α-6T) has been successfully used as the active semiconducting material in thin-film transistors. Field-induced conductivity in thin-film transistors with α-6T active layers occurs only near the interfacial plane, whereas the residual conductivity caused by unintentional doping scales with the thickness of the layer. The two-dimensional nature of the field-induced conductivity is due not to any anisotropy in transport with respect to any molecular axis but to interface effects. Optimized methods of device fabrication have resulted in high field-effect mobilities and on/off current ratios of > 106. The current densities and switching speeds are good enough to allow consideration of these devices in practical large-area electronic circuits.