Showing papers on "Electronic circuit simulation published in 1987"

Principles of electronic circuits

Abstract: The basic concepts of electronics and circuit analysis are introduced in this work. Among the selection of realistic examples offered by the book is SPICE, a circuit simulation software program used widely in EE departments. In simple terms, SPICE is used as an analysis tool to test electronic devices and their performance in circuits. The book has three key objectives: to describe device models for diodes, bipolar junction transistors and field-effect transistors; to apply these device models in a wide variety of realistic examples; and to integrate the use of SPICE throughout as a powerful design tool for circuit analysis.

Circuit Simulation on the Connection Machine

Abstract: Accurate circuit simulation is a very important step in the design of high performance integrated circuits. The ever increasing size of integrated circuits requires the use of an inordinate amount of computer time to be spent in circuit simulation. Parallel processors have been considered to speed up the simulation process. Massively parallel computers have been made available recently and present a new interesting paradigm for expensive CAD applications. This paper describes algorithms and programming techniques needed to develop SUM (Simulation Using Massively parallel computers), a relaxation-based circuit simulator on the Connection Machine, a massively parallel processor with up to 65536 processors. SUM can simulate circuits at almost constant CPU time per iteration, regardless of circuit size. SUM can simulate very large circuits. Circuit simulators running on the largest super computers can run circuits of comparable size, however SUM is easily scalable as the number of processors in the Connection Machine increases, with almost no increase in CPU time.

A Model for Wafer Fabrication Dynamics in Integrated Circuit Manufacturing

Abstract: Integrated circuit manufacturing has major operations of fabrication, sort, assembly, and test. The dynamic behavior of these operations can be modeled in terms of a highly structured queueing network. A model is presented of the components and interactions of wafer movements, processing equipment, and process steps. The model considers multiple process flows, fab organization and layout, and equipment properties such as batch size, process time, failure, and repair distributions. The model is implemented as a discrete event simulation and has been used in a number of case studies concerning realistic factory situations. This simulation model is general and can be used to study many types of discrete manufacturing.

Modeling of narrow-base bipolar transistors including variable-base-charge and avalanche effects

Abstract: A bipolar transistor model, compatible with circuit analysis programs, that can model base punchthrough and avalanche breakdown conditions, is presented. The model equations are derived for low to medium current densities and the analytical and experimental methods of obtaining the required parameters are described. Simulation results using the WATAND circuit simulator are compared to experimental measurements for two different bipolar transistors and are shown to agree very well in the normal and inverse modes of operation.

Modeling and characterization of ion-implanted GaAs MESFET's

Abstract: Accurate modeling of GaAs IC's requires a good fit to the device characteristics over the entire range of gate and drain voltages. However, the existing circuit simulator models suitable for circuit simulation fail in the linear region of the current-voltage characteristics. In this paper, we demonstrate that the nonuniformity of the mobility and doping profiles strongly affects the linear region and propose an analytical model taking this nonuniformity into account. We also present the characterization techniques that relate the model parameters to the device physics and the fabrication methods. Excellent agreement with experimental data is obtained and the model is implemented into our GaAs IC circuit simulator.

Modeling and characterization of ion-implanted GaAs MESFET's

Abstract: Accurate modeling of GaAs IC's requires a good fit to the device characteristics over the entire range of gate and drain voltages. However, the existing circuit simulator models suitable for circuit simulation fail in the linear region of the current-voltage characteristics. In this paper, we demonstrate that the nonuniformity of the mobility and doping profiles strongly affects the linear region and propose an analytical model taking this nonuniformity into account. We also present the characterization techniques that relate the model parameters to the device physics and the fabrication methods. Excellent agreement with experimental data is obtained and the model is implemented into our GaAs IC circuit simulator.

Optimization of the dynamic behavior of a SQUID system using an electronic simulation

Abstract: A theoretical analysis is given of the dynamic behavior of a SQUID system operating in a feedback mode. In order to optimize the system with respect to stability, frequency response, and slew rate, an electronic system which simulates the periodic transfer function of the SQUID sensor by a good approximation was used.

Timing Accuracy in Modern ATE

Abstract: LSI test systems built in the 1970s had compact, 60-pin test heads that presented devices under test with open wires leading to lumped-capacitive loads. Today's VLSI testers have 256-pin test heads with transmission lines leading from the DUTs to driver-comparator circuits that are as far away as 50 cm. Even though these automatic testers are adjusted to subnanosecond accuracy, reflections within the transmission lines can cause timing measurement errors up to 10 ns for MOS devices whose output impedances are not matched to the transmission lines. The authors offer the Advice circuit simulator (an AT&T proprietary version of SPICE) as one way to analyze errors due to transmission line problems before testing. They also discuss ways to correct timing errors. Finally, they recommend that very high speed ICs be designed to drive transmission lines that are terminated with matched resistors at the comparators.

Design Of A High-Performance Floating Power Mosfet Driving Circuit

Abstract: A computer-aided design of a high-performance driving circuit for floating power Mosfet switch is presented. Very fast switching and large duty cycle ratios are achieved. Design methodology and optimization procedures using computer circuit simulator SPICE 2 are given.

VLSI circuit analysis and simulation

Abstract: 7. Decomposition Techniques for Large Scale Circuit Analysis and Simulation 8. Waveform Techniques 9. Piecewise Linear Analysis and Simulation 10. Logic Equations and Switch Level Circuit Simulation 11. Interconnection Modeling 12. Circuit Optimization and Design

Integration of the power electronics design process with computers

Abstract: The use of computers in power electronics design has been limited principally to circuit simulation. There is, however, much more to product development than analysis and simulation. This paper examines the engineering process for power electronics products, from concept to manufacturing, and shows how the entire process can be pulled together around a common thread of computer based tools. Improvements can be made in engineering productivity in a wide range of tasks but not without some investment of time and capital.

A New, Circuit-Oriented CAD Approach for the Small - and Large-Signal Simulation of GaAs MESFETS Based on Physical Models

Abstract: A strategy is presented for the development of an integrated CAD tool for the design of GaAs MMICs leading from MESFET device technology to circuit performance evaluation, and the linkage of a physical device simulator to linear and non-linear circuit analysis CAD tools (SUPERCOMPACT, SPICE...) is discussed. As an example, the design of a monolithic amplifier is performed from device simulation to non-linear circuit optimization.

Simulation of A Semi-Autogenous Grinding Circuit

Abstract: The Afton Mines SAG circuit was sampled to develop a circuit simulator. Methodology employed to obtain preliminary models is described. Models were connected together to simulate the circuit. A preliminary analysis of output is included in discussion of results.

A Multiprocessor-Based Algorithm For The Simulation Of A Full-Wave Controlled Rectifier Bridge In Real Time

Abstract: This paper presents an algorithm for the real time simula-tion of a full-wave controlled rectifier bridge in a multiprocessor based environment. It is shown that every switch can be mod-eled as an inductor which is controlled by a local controller. As the topology of the circuit changes due to the closing and open-ing of the switches, it is shown that only one set of equations is needed to characterize the circuit.