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Showing papers on "Electronic circuit simulation published in 1994"


Book
01 Dec 1994
TL;DR: This comprehensive volume reveals how, using basic principles of elementary circuit analysis along with familiar numerical methods, readers can build up sophisticated electronic simulation tools capable of analyzing large, complicated circuits.
Abstract: This comprehensive volume reveals how, using basic principles of elementary circuit analysis along with familiar numerical methods, readers can build up sophisticated electronic simulation tools capable of analyzing large, complicated circuits. The book describes in clear language an especially broad range of uses to which circuit simulation principles may be put-from running general applications, to understand why SPICE works in some cases and not in others.

275 citations


Journal ArticleDOI
TL;DR: In this paper, the authors present a new framework which was adopted for a 2/spl mu/m CMOS technology to enable realistic statistical circuit performance prediction prior to manufacture and demonstrate the advantages of the proposed approach over more traditional "worst case" design methodologies.
Abstract: The implementation of a viable statistical circuit design methodology requiring detailed knowledge of the variabilities of, and correlations among, the circuit simulator model parameters utilized by designers, and the determination of the important relationships between these CAD model parameter variabilities and the process variabilities causing them is presented. This work addresses the above requirements by detailing a new framework which was adopted for a 2-/spl mu/m CMOS technology to enable realistic statistical circuit performance prediction prior to manufacture. Issues relating to MOSFET modeling, the derivation of fast "direct" parameter extraction methodologies suitable for rapid parameter generation, the employment of multivariate statistical techniques to analyze statistical parametric data, and the linking of the CAD model parameter variations to variabilities in process quantities are discussed. In this approach the correlated set of model parameters is reduced to a smaller and more manageable set of uncorrelated process-related factors. The ensuing construction and validation of realistic statistical circuit performance procedures is also discussed. Comparisons between measured and simulated variabilities of device characteristics is utilized to demonstrate the accuracy of the techniques described. The advantages of the proposed approach over more traditional "worst case" design methodologies are demonstrated. >

86 citations


Journal ArticleDOI
TL;DR: In this article, the authors proposed macromodels to simulate three-phase power converters on such packages, which are suited for steady state and large signal transient analysis at system level.
Abstract: Static power converters can be analyzed by means of widely available circuit simulation software packages such as PSPICE. However, they are usually modeled as a set of real switches, which results in long execution times and possible convergence problems in the case of complex circuits. This paper proposes macromodels to simulate three-phase power converters on such packages. The proposed macromodels are based on converter switching functions rather than actual circuit configuration, and they are suited for steady state and large signal transient analysis at system level. In this approach, voltage source inverters (VSI), current source inverters (CSI), and controlled rectifiers (CR) are simulated as multiport networks avoiding the physical nonlinear micromodels of the power switches. Computer memory and the run-times required for the simulation are thereby minimized. Complete examples of VSI, CSI and CR, with different PWM techniques, are given with specific reference to the PSPICE software to illustrate the effectiveness of the proposed models. >

73 citations


Book
01 Jan 1994
TL;DR: This updated and revised bestseller, Ron Kielkowski gives you the hands-on help and guidance you need to create more effective software modles for simulating circuit behavior, and offers the most up-to-date techniques for generating faster, more accurate simulations.
Abstract: From the Publisher: Generate faster,more accurate SPICE simulations! Make your SPICE simulations faster,more accurate - and avoid nonconvergence using the breakthrough methods packed into the Second Edition of Inside SPICE. In this updated and revised bestseller,Ron Kielkowski gives you the hands-on help and guidance you need to create more effective software modles for simulating circuit behavior. This one-of-a-kind modeling toll and troubleshooter brings you up to speed on the latest commercially-SPICE-like simulators,including HSPICe,PSPICE,IS_SPICE and MICROCAP IV. . . delivers proven solutions to the full range of circuit simulation problems,including convergence and accuracy problems. . . shows you how to make difficult measurement such as loop gain of an op amp or distortion measurements of clocked ciruits like converters and sample-and-hold circuits. . . measure any class of circuits,such as oscillators,charge-storage circuits,or very large circuits. . . and more. Inside SPICE. Up-to-date methods for creating fast,accurate circuit simulations with SPICE. The complexities of SPICE - the international standard in circuit simulation software - require expert handling Inside SPICE gives you everything necessary to create the most effective software models for simulation the behavior of real circuits. And this edition of Inside SPICE offers the most up-to-date techniques for generating faster,more accurate simulations. Inside SPICE,Second Edition is an indispensable reference tool - and a troubleshooter. It will help professionals and students analyze and work around problems typically encountered with SPICE and SPICE-like simulator programs: HSPICE,PSPICE,IS_SPICE,andMICROCAP IV. It has a new chapter on simulation trends,in addition to anew,Windows-compatible CD-ROM version of RSPICE with extensive sample models. Well-organized chapters spell out the fundamentals,including: understanding circuit simulations; nonconvergence; SPICE options; numeric integration. Packed with example circuit files.

73 citations


Proceedings ArticleDOI
C.L. Ma1, P.O. Lauritzen1, Pao-Yi Lin1, I. Budihardjo1, J. Sigg2 
20 Jun 1994
TL;DR: In this paper, the charge control approach to modeling is extended to power devices by converting device equations to charge modules, which can then be used to assemble device models, and the resulting models are represented by relatively simple functions which are valid over a wide range of operation.
Abstract: The charge control approach to modeling is extended to power devices by converting device equations to charge modules, which can then be used to assemble device models. This method represents a systematic technique for constructing models for power electronic circuit simulation. The resulting models are represented by relatively simple functions which are valid over a wide range of operation. >

67 citations


Journal ArticleDOI
TL;DR: An algorithm for efficient SPICE-level simulation of transmission lines with arbitrary scattering parameter descriptions that is, the line can be represented in the form of a frequency- domain model or a table of measured frequency-domain data.
Abstract: In this paper we describe an algorithm for efficient SPICE-level simulation of transmission lines with arbitrary scattering parameter descriptions. That is, the line can be represented in the form of a frequency-domain model or a table of measured frequency-domain data. Our approach initially uses a forced stable decade-by-decade l/sub 2/ minimization approach to construct a sum of rational functions approximation, but the approximation has dozens of poles and zeros. This unnecessarily high-order model is then reduced using a guaranteed stable model order reduction scheme based on balanced realizations. Once the reduced-order model is derived, it can be combined with the transmission line's inherent delay to generate an impulse response. Finally, following what is now a standard approach, the impulse response can be efficiently incorporated in a circuit simulator using recursive convolution. An example of a transmission line with skin-effect is examined to both demonstrate the effectiveness of the approach and to show its generality. >

66 citations


Journal ArticleDOI
TL;DR: In this article, the large-signal RF operating principles of MESFET amplifiers are investigated using a circuit simulator that incorporates a physics-based MES-FET model which has been augmented with a new gate breakdown model.
Abstract: The large-signal RF operating principles of MESFET amplifiers are investigated using a circuit simulator that incorporates a physics based MESFET model which has been augmented with a new gate breakdown model. It is demonstrated that the main saturating mechanisms of the MESFET under large-signal RF operation are forward and reverse conduction of the gate electrode. Maximized RF performance of MESFET amplifiers is obtained by optimally positioning the dynamic load line relative to the RF-IV plane. The position of the dynamic v i characteristic is determined by device breakdown, bias, and circuit tuning conditions.

51 citations


Patent
Steven A. Buhler1, Ellis D. Harris1
20 Sep 1994
TL;DR: In this paper, an electronic compensation circuit in which a simulation of a laser's thermal droop characteristics is used to adjust input to the laser and thereby compensate for the laser's temperature drop effects is presented.
Abstract: An electronic compensation circuit in which a simulation of a laser's thermal droop characteristics is used to adjust input to the laser and thereby compensate for the laser's thermal droop effects The simulation circuit is connected to the laser either as an open loop circuit to provide a once only correction or as a closed loop feedback circuit to provide a continuous correction of the laser droop effects. The simulation circuit is designed using either analog or digital circuitry and is adjustable to provide compensation for lasers having different time constants of droop or different values of droop.

43 citations


Journal ArticleDOI
TL;DR: In this article, an active load-pull technique is proposed for the measurement of highly mismatched power transistors, which consists of using suitable mismatched sources to drive the device under test, and an electronic simulation of highly reflective loads very close to the edge of the Smith chart can be achieved.
Abstract: The measurement of highly mismatched power transistors has always been a difficult problem. A novel, active load-pull technique providing an attractive solution is proposed in this paper. It consists of using suitable mismatched sources to drive the device under test. By using the proposed measurement setup, an electronic simulation of highly reflective loads very close to the edge of the Smith chart can be achieved (reflection coefficients larger than 0.9). Furthermore, the magnitude and phase of the reflected power waves at the output of the transistor under test are accurately controlled so as not to damage the component. Some examples of load contour mappings are given. They demonstrate the promising capabilities offered by this improved large signal measurement tool. >

35 citations


Journal ArticleDOI
TL;DR: In this article, the authors presented a unified approach based on frequency matching to form the model of a length of transmission line with skin effect and frequency-dependent dielectric loss, treating the ordinary RLGC line as a special case.
Abstract: We present circuit models of a length of transmission line with skin effect and frequency-dependent dielectric loss, treating the ordinary RLGC line as a special case. The line is modeled as a characteristic two-port in which the characteristic impedance is approximated as the input impedance of a lumped circuit and the propagation function is approximated as the transfer function of a second lumped circuit plus an ideal delay. A unified approach based on frequency matching is presented to form the model. In the approximation, the skin effect is represented as the impedance of an RL ladder, and the complex dielectric parameter as the admittance of an RC ladder. A table of the rms error of the approximation is derived from which the complexity of the model can be found for a desired accuracy. The model is guaranteed to be stable, and since it consists entirely of lumped circuit elements and ideal delay lines and since the model parameters can be easily computed, it can be incorporated as a subcircuit model in a general circuit simulator, and the solution can be obtained by integrating the circuit equations in the usual manner. No FFT or convolution is required. >

32 citations


Journal ArticleDOI
Yasuaki Inoue1
TL;DR: This paper proposes a practical algorithm which can be implemented on the general-purpose circuit simulators with modified nodal formulation, for determining the de operating-point of large-scale circuits.
Abstract: SPICE-type general-purpose circuit simulators are used widely as a support tool for circuit design. It often happens, however, that the do operating-point analysis does not converge. To cope with such a situation, various approaches have been proposed based on continuation methods with the global convergence property, but these have yet to come to the stage of practical application to large-scale circuits. This paper proposes a practical algorithm which can be implemented on the general-purpose circuit simulators with modified nodal formulation, for determining the de operating-point of large-scale circuits. As the first step, the concept of “modified cut-set analysis” is introduced and some properties of the modified nodal equation are presented. Then it is shown, in practical circuits, that the convergence of the algorithm is theoretically guaranteed. The proposed algorithm is then implemented on an existing general-purpose circuit simulator and applied to a bipolar analog LSI to demonstrate its effectiveness. For the LSI circuit formulated in 18, 553 modified nodal equations, the de operating point was determined in 270 minutes using an IBM RS6000-550.

Patent
07 Mar 1994
TL;DR: In this paper, a method of controlling a circuit simulator for examining the electromagnetic behavior of an electrical conductor pattern is based on reducing the equivalent circuit model of the pattern, where the pattern is first represented by a collection of geometrical elements, whose size is determined by the scale of the details that is well below the minimum wavelength contemplated.
Abstract: A method of controlling a circuit simulator for examining the electromagnetic behaviour of an electrical conductor pattern is based on reducing the equivalent circuit model of the pattern. The pattern is first represented by a collection of geometrical elements, whose size is determined by the scale of the geometrical details that is well below the minimum wavelength contemplated. Selection of a set of those elements that lie approximately at a distance of one wavelength from one another and expressing the field values of the non-selected elements in terms of the field values for the selected elements permits correlating a low rank admittance matrix and the matrices of the Maxwell equations. Typically, an effective reduction of four orders of magnitude in the number of equivalent circuit components is obtained without losing model accuracy.

Proceedings ArticleDOI
07 Aug 1994
TL;DR: The paper gives a comprehensive state-of-the-art technology review of power electronics simulation and design automation tools and discusses the development of a new generation of power electronic simulation andDesign automation tools.
Abstract: The paper gives a comprehensive state-of-the-art technology review of power electronics simulation and design automation tools. New trends have been indicated whenever possible. In particular, the discussion is directed toward the development of a new generation of power electronic simulation and design tools. The techniques reviewed include: the state variable approach; nodal analysis; modified nodal analysis; and state space averaging simulation. The future trends discussed include: a unified multi-level mixed-level simulation framework; automatic generation of behaviour models; computer aided synthesis and optimisation design; and expert systems. >

Journal ArticleDOI
TL;DR: A simple and very efficient harmonic-balance technique is presented that is suitable for the steady-state analysis of nonlinear microwave and millimeter-wave circuits that require physics-based, fully numerical simulations of charge carrier transport in the solid-state device.
Abstract: A simple and very efficient harmonic-balance technique is presented that is suitable for the steady-state analysis of nonlinear microwave and millimeter-wave circuits that require physics-based, fully numerical simulations of charge carrier transport in the solid-state device. The practical integration of a numerical device simulator with a nonlinear circuit simulator requires a robust and fast circuit solution algorithm. The new circuit solution algorithm was applied to a test simulation of a 100- to 300-GHz multiplier circuit, achieving a savings in computational effort of 98% and a reduction in execution time by a factor of 33 over contending harmonic-balance techniques. >

Journal ArticleDOI
01 Mar 1994
TL;DR: AWEswit is a mixed signal simulator for switched capacitor circuits that models the clock feedthrough and signal-dependent charge dump that characterize MOSFET switches and naturally handles the bandwidth limitations associated with switched capacitors.
Abstract: This paper describes the modeling and simulation of switched capacitor circuits in AWEswit. AWEswit is a mixed signal simulator for switched capacitor circuits. It allows for portions of the circuit to be modeled with digital blocks controlled by an event queue. The remainder of the circuit is modeled in the analog domain. The paper describes the circuit formulations employed by AWEswit, and how they are exploited in modeling the nonidealities associated with switched capacitor circuits. AWEswit employs asymptotic waveform evaluation (AWE) as its core simulation engine. It combines circuit formulations in the charge-voltage and current-voltage regimes. This flexibility in the circuit formulations means that if the circuit is modeled entirely with ideal switches (i.e. no resistors), then it is automatically solved in the charge-voltage regime (like SWITCAP2). However, if portions of the circuit need to be solved in the current-voltage regime, then AWEswit automatically partitions the circuit and solves the different partitions in whichever regime is appropriate, i.e., in the current-voltage regime (using AWE to evaluate circuit response) or in the charge-voltage regime. AWEswit naturally handles the bandwidth limitations associated with switched capacitor circuits. In addition, it models the clock feedthrough and signal-dependent charge dump that characterize MOSFET switches. The simulator is illustrated by example. >

Proceedings ArticleDOI
06 Jun 1994
TL;DR: This paper presents a new approach to 3-dimensional thermal simulation of arbitrary electronic systems based on the combination of numerical elements and finite differences and analytical techniques which are very general and extremely efficient.
Abstract: This paper presents a new approach to 3-dimensional thermal simulation of arbitrary electronic systems. This approach is based on the combination of numerical (finite elements and finite differences) and analytical (Fourier series) techniques which are very general and extremely efficient. Complex electronic systems (monolithic IC's, multichip modules, including their packaging) can be analyzed in minutes on PC's to produce a detailed temperature distributions within the system structure. The software system, MONSTR, has been developed and applied to several industrial examples. The results of this analysis are directly entered to the circuit simulator, HSPICE, as the actual temperature for each circuit element and thus an integrated electro-thermal simulation is performed.

Book
30 Nov 1994
TL;DR: In this paper, a nonlinear 2D-1D thermal simulator called ITSIM is proposed to simulate EOS thermal failure in ICs, based on a circuit level EOS simulator.
Abstract: List of Figures. List of Tables. Preface. 1. Electrical Overstress in ICs. 2. NMOS ESD Protection Devices and Process Related Issues. 3. Measuring EOS Robustness in ICs. 4. EOS Thermal Failure Simulation for Integrated Circuits. 5. ITSIM: a Nonlinear 2D--1D Thermal Simulator. 6. 2D Electrothermal Analysis of Device Failure in MOS Processes. 7. Circuit Level Electrothermal Simulation. 8. IETSIM: an Electrothermal Circuit Simulator. 9. Summary and Future Research. Bibliography. Index.

Proceedings ArticleDOI
06 Jun 1994
TL;DR: An algorithm for efficient circuit-level simulation of transmission lines which can be specified by tables of frequency-dependent scattering parameters which uses a forced stable section-by-section l2 minimization approach and guaranteed stable balanced realization techniques to reduce the order of the rational function.
Abstract: In this paper we describe an algorithm for efficient circuit-level simulation of transmission lines which can be specified by tables of frequency-dependent scattering parameters. The approach uses a forced stable section-by-section l2 minimization approach to construct a high order rational function approximation to the frequency domain data, and then applies guaranteed stable balanced realization techniques to reduce the order of the rational function. The rational function is then incorporated in a circuit simulator using fast recursive convolution. An example of a transmission line with skin-effect is examined to both demonstrate the effectiveness of the approach and to show its generality.

Journal ArticleDOI
TL;DR: The finite difference time domain (FDTD) algorithm is used to obtain the full-wave electromagnetic field solutions from which the equivalent circuits of coupled transmission lines, discontinuities in Transmission lines, and a parallel-plate power plane configuration are determined.
Abstract: In this paper, we discuss the electromagnetic modeling of the components of a computer package that contribute to noise on the signal lines in computer packages We obtain equivalent circuits of coupled transmission lines, discontinuities in transmission lines, and a parallel-plate power plane configuration These equivalent circuits allow one to use a circuit simulator to model the crosstalk, reflection, and simultaneous switching noises that are common in computer packages The finite difference time domain (FDTD) algorithm is used to obtain the full-wave electromagnetic field solutions from which the equivalent circuits are determined >

Journal ArticleDOI
TL;DR: In this article, the effects of single event upset (SEU) and total-dose radiation effects on the circuit behavior are modeled using a simulator, which can be used to study the effects on circuit behavior of two radiation phenomena.
Abstract: In this paper we describe a simulator which can be used to study the effects on circuit behavior of two radiation phenomena: single event upset (SEU) and total-dose radiation effects. Using this simulator the user can predict the error rate in large circuits due to single event upset. The error rate model described here uses a well established methodology, but for the first time a different choice is made on picking up the sensitive nodes, enabling a quick prediction even for very complex circuits. The simulator predicts circuit behavior after total-dose irradiation using as inputs: the dose rate and the total dose. Parameter sets that characterize the transistor response to radiation. And the circuit netlist. The total-dose simulator is based on physical models of the changes in the MOSFET caused by radiation. We quantify the degradation of each MOSFET in a circuit with two parameters and determine the change in the MOSFET characteristics-from preirradiation MOSFET data. Using the "irradiated" MOSFET parameters. We can simulate circuit behavior using an ordinary circuit simulator such as SPICE. With this simulator, one can study how resistant a circuit is to changes due to irradiation and design circuits to be functionally radiation "hard" The "double-kink" in the MOSFET subthreshold region due to the parasitic effect of the edge transistors can be simulated and the user is advised when leakage current is unacceptably large. The speed degradation of a ring oscillator was simulated and the results compared with actual measured data. >

Patent
Stephen John Battersby1
10 Aug 1994
TL;DR: In this paper, a method for simulating distributed effects within a device such as a power semiconductor device, more particularly a method that generates a simulation program for automatically simulating time dependent characteristics of a device to enable the operation of the device within a larger circuit to be simulated by a circuit simulator program which contains a computer model of the devices to facilitate the designing of circuits incorporating such a device.
Abstract: A method for simulating distributed effects within a device such as a power semiconductor device, more particularly a method for generating a simulation program for automatically simulating time dependent characteristics of a device to enable the operation of the device within a larger circuit to be simulated by a circuit simulator program which contains a computer model of the device to facilitate the designing of circuits incorporating such a device is described. In this method a computer system is used to solve a time dependent differential equation, for example the time dependent ambipolar diffusion equation for a semiconductor device, using boundary conditions which define the time dependent characteristics as evolving at a constant rate for a given time interval such that only a small number of transient terms are required for the solution and using the solution of the time dependent differential equation to modify the computer model of the device contained within the simulator program to enable the time dependent characteristics of the device to be simulated. Such a method enables the distributed effects of a device to be simulated in a circuit simulation.

Proceedings ArticleDOI
06 Nov 1994
TL;DR: Any nonlinear dynamic circuit with any kind of excitation, which can be simulated by the transient analysis routine in a circuit simulator, can be simulation by the noise simulator in time-domain to produce the noise variances and covariances of circuit variables as a function of time.
Abstract: A new, time-domain, non-Monte Carlo method for computer simulation of electrical noise in nonlinear dynamic circuits with arbitrary excitations is presented. This time-domain noise simulation method is based on the results from the theory of stochastic differential equations. The noise simulation method is general in the sense that any nonlinear dynamic circuit with any kind of excitation, which can be simulated by the transient analysis routine in a circuit simulator, can simulated by our noise simulator in time-domain to produce the noise variances and covariances of circuit variables as a function of time, provided that noise models for the devices in the circuit are available. Noise correlations between circuit variables at different time points can also be calculated. Previous work on computer simulation of noise in integrated circuits is reviewed with comparisons to our method. Shot, thermal and flicker noise models for integrated-circuit devices, in the context of our time-domain noise simulation method, are described. The implementation of this noise simulation method in a circuit simulator (SPICE) is described. Two examples of noise simulation (a CMOS ring-oscillator and a BJT active mixer) are given.

Journal ArticleDOI
TL;DR: In this article, a novel harmonic-balance circuit analysis technique with a physics-based hydrodynamic device simulator was proposed to simulate the large-signal time-dependent behavior of GaAs-AlGaAs Heterostructure Barrier Varactor (REV) frequency tripler circuits.
Abstract: Accurate and efficient simulations of the large-signal time-dependent behaviour of GaAs-AlGaAs Heterostructure Barrier Varactor (REV) frequency tripler circuits have been obtained. This is accomplished by combining a novel harmonic-balance circuit analysis technique with a physics-based hydrodynamic device simulator. The integrated HBV hydrodynamic device/harmonic-balance circuit simulator allows HBV multiplier circuits to be co-designed from both a device and a circuit point of view. Comparisons are made with the experimental results of Choudhury et al. (see IEEE Trans. Microwave Theory Tech., vol. 41, no. 4, p. 595-9, 1993) for GaAs-AlGaAs HBV frequency triplers operating near 200 GHz. These comparisons illustrate the importance of representing active devices with physics-based numerical device models rather than analytical device models based on lumped quasi-static equivalent circuits. >

Proceedings ArticleDOI
20 Jun 1994
TL;DR: Practical implementations of a proposed model in widely-used versions of SPICE by hard-coding and by using user-defined controlled sources are presented and an implementation in Saber using the analog hardware description language MAST is included.
Abstract: Accurate simulation of power electronic circuits involving power diodes requires mathematically-based power diode models to describe the forward recovery and reverse recovery characteristics realistically. Proper implementations of these models have important bearings on their eventual acceptance in the industry. Practical implementations of a proposed model in widely-used versions of SPICE by hard-coding and by using user-defined controlled sources are presented. The discussion also includes an implementation in Saber using the analog hardware description language MAST. >

Proceedings ArticleDOI
M. Kimata1, Masato Koyama1, R. Uchida1, M. Ikeda, T. Kawamura, T. Okada 
02 Oct 1994
TL;DR: In this article, a novel IGBT model suitable for analyzing the static and dynamic switching characteristics of IGBT modules, which are widely used in power converter circuits, is proposed. But the model is a subcircuit model derived from the basic IGBT equivalent circuit, and can be implemented in the circuit simulator SPICE without modifying the simulator codes nor using user-defined subroutines.
Abstract: This paper proposes a novel IGBT model suitable for analyzing the static and dynamic switching characteristics of IGBT modules, which are widely used in power converter circuits. This model is a subcircuit model derived from the basic IGBT equivalent circuit, and can be implemented in the circuit simulator SPICE without modifying the simulator codes nor using user-defined subroutines. Model parameters are easily extracted from measured electrical characteristics of IGBT modules. The validity of this model is confirmed by experimental results. Some simulation results are also presented to indicate the availability of this IGBT model for accurately estimating the performance of power converters and for designing their robust snubber protection circuits. >

Proceedings ArticleDOI
Tuyen Van Nguyen1
06 Jun 1994
TL;DR: An efficient method is presented, based on the transfer function simulation method, for the transient analysis of lossy and dispersive transmission lines terminated by nonlinear circuits, which combines the efficiency provided by rational function approximation with the accuracy of using modal decomposition.
Abstract: This paper presents an efficient method, based on the transfer function simulation method, for the transient analysis of lossy and dispersive transmission lines terminated by nonlinear circuits. This method combines the efficiency provided by rational function approximation with the accuracy of using modal decomposition. For the task of computing the convolution integral, the transfer function simulation method was found to be more straightforward for implementation and more efficient than the recursive convolution method, thus providing further improvement in simulation efficiency. A robust and efficient method for the analysis of frequency dependent (dispersive) transmission lines is also reported. This method has been implemented in AS/X, IBM production circuit simulator, and has been used routinely for the analysis of practical lossy and dispersive coupled transmission lines.

Journal ArticleDOI
TL;DR: An analogue circuit implementation is presented for an adaptive resonance theory neural network architecture, called the augmented ART-1 neural network (AART1-NN), a modification of the popular ARTl-NN, and it exhibits the same behaviour as the ART l-NN.
Abstract: An analogue circuit implementation is presented for an adaptive resonance theory neural network architecture, called the augmented ART-1 neural network (AART1-NN). The AART1-NN is a modification of the popular ARTl-NN, developed by Carpenter and Grossberg, and it exhibits the same behaviour as the ARTl-NN. The A ARTl-NN is a real-time model, and has the ability to classify an arbitrary set of binary input patterns into different clusters. The design of the AART1-NN circuit is based on a set of coupled nonlinear differential equations that constitute the AART1-NN model. The circuit is implemented by utilizing analogue electronic components such as operational amplifiers, transistors, capacitors, and resistors. The implemented circuit is verified using the PSpice circuit simulator, running on Sun workstations. Results obtained from the PSpice circuit simulation compare favourably with simulation results produced by solving the differential equations numerically. The prototype system developed here ...

Journal ArticleDOI
01 Apr 1994
TL;DR: In this paper, an interactive program for the extraction of transistor parameters has been developed using a SPICE-like circuit simulator instead of an explicit set of model equations, and many simulation capabilities (i.e. a variety of elements and their models, analyses and simulation modes) are available at the extractor level.
Abstract: An interactive program for the extraction of transistor parameters has been developed using a SPICE-like circuit simulator instead of an explicit set of model equations. Consequently, many simulation capabilities (i.e. a variety of elements and their models, analyses and simulation modes) are available at the extractor level. Several optimisation methods are integrated into the program to provide robust as well as efficient fitting of device characteristics. Analysis of heterojunction bipolar transistor self-heating effects is presented in greater detail as an example application. >

Proceedings ArticleDOI
30 May 1994
TL;DR: A method for testing CMOS comparators using both the upper limit and the lower limit is discussed, and the efficiency of fault detection by current testing is examined.
Abstract: Many recent ASICs include both analog and digital circuits, called mixed-signal integral circuits, to realize required functions on one chip. The comparator circuit is a principal element in the mixed-signal integrated circuit. In this paper we discuss a method for testing CMOS comparators. The method is current testing using both the upper limit and the lower limit. Bridging faults and break faults are assumed on the circuit layout and are analyzed by a circuit simulator. We examine the efficiency of fault detection by current testing. The result of the test shows that the proposed testing method has the highly fault coverage more than 94 percent. >

Proceedings ArticleDOI
11 Dec 1994
TL;DR: A logic level circuit simulator that uses an acyclic multi-way network partitioning algorithm to decompose Boolean networks and an algorithm-independent simulation language that allows a discrete-event simulation model to be executed using a variety of simulation algorithms is described.
Abstract: Interest in the exploitation of parallelism in circuit simulation has been increasing steadily. In this paper, we study parallel logic level simulation of combinational VLSI Boolean networks using both conservative and optimistic simulation algorithms. In particular, we describe a logic level circuit simulator that uses an acyclic multi-way network partitioning algorithm to decompose Boolean networks and an algorithm-independent simulation language that allows a discrete-event simulation model to be executed using a variety of simulation algorithms. The simulator has been implemented on an IBM SP1 supercomputer and was used to simulate a set of combinational Boolean circuits from the ISCAS85 benchmark suite. Our results show that it is feasible to obtain speedups for even relatively small circuits using both conservative and optimistic methods.