Showing papers on "Equivalent circuit published in 1974"
IBM1
TL;DR: In this paper, partial element equivalent circuits (PEECs) are derived from an integral equation to establish an electrical description of the physical geometry of the PEECs, which are general in that they include losses.
Abstract: Multiconductor or multiwire arrangements find many applications in electronic systems. Examples are interconnections between digital circuits or integrated microwave circuits. Equivalent circuit models are derived here from an integral equation to establish an electrical description of the physical geometry. The models, which are appropriately called partial element equivalent circuits (PEEC), are general in that they include losses. Models of different complexity can be constructed, to suit the application at hand.
1,166 citations
01 Jan 1974
1,084 citations
TL;DR: In this article, the authors considered the small-signal ac response of a system containing a single species of positive charge and one species of negative charge, where the charge carriers may be of many different types (ions, electrons, vacancies, etc.) and have arbitrary mobilities and valences.
Abstract: The small‐signal ac response is considered of a system containing a single species of positive charge and a single species of negative charge. The charge carriers may be of many different types (ions, electrons, vacancies, etc.) and are assumed to have arbitrary mobilities and valences. Quite general boundary conditions are considered which encompass the range from complete blocking to zero blocking (infinite reaction rate at the electrodes) for positive and negative charges separately. The present paper deals primarily with approximations to an earlier exact solution of the problem which, in general, lead to an equivalent circuit made up of three parallel R C combinations in series. The elements of one of these parallel circuits, associated only with bulk effects, are frequency independent, and those of another, which are associated with nonzero blocking, may often be well approximated as independent. The third R C section arises from diffusion effects, involves frequency dependent elements, and exhibits...
234 citations
TL;DR: A macromodel has been developed for integrated circuit (IC) op amps which provides an excellent pin-for-pin representation and provides simulated circuit responses that have run times which are an order of magnitude faster and less costly in comparison to modeling the op amp at the electronic device level.
Abstract: A macromodel has been developed for integrated circuit (IC) op amps which provides an excellent pin-for-pin representation. The model elements are those which are common to most circuit simulators. The macromodel is a factor of more than six times less complex than the original circuit, and provides simulated circuit responses that have run times which are an order of magnitude faster and less costly in comparison to modeling the op amp at the electronic device level. Expressions for the values of the elements of the macromodel are developed starting from values of typical response characteristics of the op amp. Examples are given for three representative op amps. In addition, the performance of the macromodel in linear and nonlinear systems is presented. For comparison, the simulated circuit performance when modeling at the device level is also demonstrated.
194 citations
TL;DR: In this paper, the equivalent circuit of an inductive strip inserted in the middle of a waveguide parallel to the E plane is analyzed theoretically by evaluating the inductive reactance of the equivalent T network which was obtained by the Rayleigh-Ritz variational technique.
Abstract: The equivalent circuit of an inductive strip inserted in the middle of a waveguide parallel to the E plane is analyzed theoretically by evaluating the inductive reactance of the equivalent T network which was obtained by the Rayleigh-Ritz variational technique. A design theory for the bandpass filter of this type is derived from this equivalent circuit. The confirmation between the design theory and the experimental resuIts is also shown.
179 citations
TL;DR: In this article, an analysis of the input impedance and an approximate equivalent circuit for the Y-junction circulator is presented, which shows the relationship between Bosma's equivalent circuit and that of Fay and Comstock.
Abstract: Octave bandwidth operation of Y-junction stripline and microstrip circulators is predicted using Bosma's Green's function analysis. The width of the coupling transmission lines is found to be a significant design parameter. Theoretical and experimental results are presented which show that wide lines and a smaller than usual disk radius can be used to obtain wide-band operation. A microstrip circulator is reported which operates from 7-15 GHz. Also presented are an analysis of the input impedance and an approximate equivalent circuit for the Y-junction circulator which shows the relationship between Bosma's equivalent circuit and that of Fay and Comstock.
162 citations
TL;DR: Coax-slot and microstrip-slot transitions are discussed in this article, where experimental VSWR and impedance data are presented and compared with values computed using equivalent circuits for these transitions.
Abstract: Coax-slot and microstrip-slot transitions are discussed Experimental VSWR and impedance data are presented and compared with values computed using equivalent circuits for these transitions Thick-film chip terminations are also investigated
160 citations
TL;DR: The most relevant techniques that have either found or should find useful application in analyzing microwave circuit performances in the frequency domain are surveyed and a comparison is made between the direct method and the transpose-matrix method, which is in certain cases similar to the method based on the adjoint circuit.
Abstract: The most relevant techniques that have either found or should find useful application in analyzing microwave circuit performances in the frequency domain are surveyed. The particular needs of the microwave engineer are briefly discussed. Circuit equation formulations in terms of voltages and currents and wave variables are presented and the solution of the set of circuit equations by sparse-matrix techniques is illustrated. Methods based on multiport connection are also reviewed. The techniques for computing the first- and second-order sensitivity are illustrated and a comparison is made between the direct method and the transpose-matrix method, which is in certain cases similar to the method based on the adjoint circuit.
83 citations
TL;DR: In this article, a distributed RC circuit model is used to describe an interdigital electrode transducer (IDT) having finite conduction in the electrode stripes, which is described by a set of differential equations whose solutions yield the current and voltage distributions along the aperture of the IDT.
Abstract: A distributed RC circuit model is used to describe an interdigital electrode transducer (IDT) having finite conduction in the electrode stripes. The distributed circuit is described by a set of differential equations whose solutions yield the current and voltage distributions along the aperture of the IDT. It is found that the electrode resistance causes a distortion of the excited wave amplitude and phase due to the nonuniform voltage and current distribution. An equivalent circuit for the terminal properties is also derived which illustrates the effects of conduction loss. The theory is also used to predict electrode efficiency, effective aperture weighting, and phase shift in weighted arrays.
55 citations
01 Apr 1974
TL;DR: In this paper, the authors presented a study into the mechanism by which failure occurs in an integrated circuit when it is subjected to a discharge of static electricity, where the current that flows through the integrated circuit during a static discharge was shown to be an exponentially decaying current pulse.
Abstract: The results are presented of a study into the mechanism by which failure occurs in an integrated circuit when it is subjected to a discharge of static electricity. The current that flows through an integrated circuit during a static discharge is shown to be an exponentially decaying current pulse. The peak value and rate of decay of the pulse can be calculated through the use of suitable equivalent circuits. Experimental data was obtained by using a simple test apparatus to simulate the current pulses caused by an electrostatic discharge. The power density and temperature rise at critical locations in the integrated circuit were calculated by using the current expression and the relevant physical and electrical properties of the I. C. Failure was found to occur when the temperature near a junction reached the approximate melting point of silicon. As a consequence of this study, a technique is derived which will permit the prediction of approximate threshold levels of static voltage that will produce failure under various conditions.
50 citations
TL;DR: The electrical response of a pigmented lipid bilayer to a short laser pulse is measured by a tunable voltage clamp method and the intrinsic chemical rate constant obtained is shown to be the pseudo-first-order rate constant of the reverse dark reaction of the reduced acceptor and the oxidized pigment.
Abstract: The electrical response of a pigmented lipid bilayer to a short laser pulse is measured by a tunable voltage clamp method. In this method, a variable access impedance permits “tuning” of the observed relaxations for optimal measurements. Analysis of the data so obtained leads to an equivalent circuit that contains a novel chemical capacitance charged by the specific photoreaction across a single membrane-water interface. This chemical capacitance is distinct from the ordinary membrane capacitance. The intrinsic chemical rate constant obtained from the equivalent circuit analysis is shown to be the pseudo-first-order rate constant of the reverse dark reaction of the reduced acceptor and the oxidized pigment. The tunable voltage clamp method of measurement and analysis allows unambiguous separation of this rate constant into resistive and capacitative elements, which are interpreted in molecular terms.
TL;DR: In this article, the conductance and capacitance of a thick-oxide MOS tunnel junction was measured from 35 Hz to 210 kHz and it was demonstrated that the use of a thickness 40 to 65 A makes it possible to obtain the surface-state data throughout the whole silicon band gap with better resolution and better sensitivity than the conventional MOS capacitance techniques.
Abstract: The conductance and capacitance of thick-oxide MOS tunnel junctions (SiO2 thickness 40 to 65 A) have been measured from 35 Hz to 210 kHz. It is demonstrated that the use of a thick-oxide MOS tunnel junction makes it possible to obtain the surface-state data throughout the whole silicon band gap with better resolution and better sensitivity than the conventional MOS capacitance techniques. A slight departure from equilibrium may occur in the voltage range where large tunnel current flows. Corrections to the energy scale must be made in this voltage range. A method for the evaluation of the junction quality is discussed. The simplified equivalent circuits necessary for the calculation of surface-state data are constructed under various bias conditions by an approach different from that used in a previously published work. The present work supports the model that at least some of the observed surface states are a consequence of the diffusion of contact metals into the oxide.
TL;DR: In this paper, Young's technique is applied to the design of an M-band waveguide filter with a conductive sheet with finite thickness sandwiched between waveguide shells, and the experimental results were found to be in good agreement with the theory and analysis techniques developed by Young.
Abstract: In 1972 Konishi proposed a unique waveguide filter of sandwich-like construction that was attractive because of its simplicity This short paper presents an analysis of the sandwich filter that has a conductive sheet with finite thickness sandwiched between waveguide shells An equivalent circuit is derived, design charts are proposed, and Young's technique is applied to the design of an M-band waveguide filter The experimental results were found to be in good agreement with the theory and analysis techniques developed herein
TL;DR: In this article, the small signal admittance of a junction device in the presence of deep lying majority carrier traps is obtained as a solution to a simple differential equation (dC/dχ) = (C2/e)−(ρac/ψac), where C Y/jω is the complex capacitance, x is the distance within the depletion region from the neutral bulk semiconductor, ρac is the a.c. incremental change in charge density at χ when the bias is incremented by ψac.
Abstract: The small signal admittance, Y, of a junction device, in the presence of deep lying majority carrier traps, is obtained as a solution to a simple differential equation (dC/dχ) = (C2/e)−(ρac/ψac), where C Y/jω is the complex capacitance, x is the distance within the depletion region from the neutral bulk semiconductor, ρac is the a.c. incremental change in charge density at χ when the bias is incremented by ψac. This equation can be numerically integrated with one boundary condition, the flat band capacitance of the bulk semiconductor. An analytic solution to the above differential equation is possible over a wide frequency range without the use of a truncated space charge approximation. The admittance of one half of a junction device can then be modelled by a 3p + 1 lumped element equivalent circuit involving 3p + 2 device parameters, where p is the number of species of deep lying majority carrier traps that are virtually unionized in the bulk. These circuit elements bear simple direct relationships to the deep level parameters. Impedance vs frequency measurements at a single bias and temperature yield only 2p + 1 equations and are not sufficient to define the elements uniquely. One therefore needs p + 1 additional equations for a unique synthesis. We also show how additional equations can be obtained from impedance vs voltage or temperature measurements.
TL;DR: Based on a consideration of the physicochemical processes in the interface between a metal electrode and an electrolyte, an equivalent circuit is derived for the small-signal impedance of metal bioelectrodes of the needle type.
Abstract: Based on a consideration of the physicochemical processes in the interface between a metal electrode and an electrolyte, an equivalent circuit is derived for the small-signal impedance of metal bioelectrodes of the needle type. The equivalent circuit consists of four blocks: the charge-transfer section, which is essentially resistive; the double-layer capacitance, which operates in parallel to the first block; in series with the two is the diffusion-layer impedance, which decreases essentially with √ω and has a constant phase angle of 45°. It can conveniently be modelled by the input impedance of an infinitely longRC electrical transmission line with distributed parameters. And finally, in series with the latter, there is the bulk resistance of the electrolyte.
01 Oct 1974
TL;DR: In this article, a method for rearranging the electromagnetic-field-theory solutions of certain low-frequency devices into equivalent-circuit form is described, and two types of equivalent circuits are described, one basic and the other terminal.
Abstract: A method is described for rearranging the electromagnetic-field-theory solutions of certain low-frequency devices into equivalent-circuit form. Two types of equivalent circuit are described, one ‘basic’ the other ‘terminal’. An equivalent circuit can aid the understanding of a device, and it also makes possible substantial saving in computer time. To illustrate the method, the equivalent circuit of one type of cylindrical induction device is derived. Finally, a list is given of other devices for which equivalent circuits have been developed.
TL;DR: Steady-state properties of a variable-speed drive using a synchronous motor fed by a controlled current-source inverter are derived from an equivalent circuit model, including saturation, and are confirmed by experiment.
Abstract: Steady-state properties of a variable-speed drive using a synchronous motor fed by a controlled current-source inverter are derived from an equivalent circuit model, including saturation, and are confirmed by experiment. The system is shown to be stable under all operating conditions. Control strategy for open-loop operation is discussed.
TL;DR: In this paper, a general approach for deriving quasi-static equivalent circuits for discontinuities in microstrip lines is presented, based upon Galerkin's method applied in the Fourier transform domain.
Abstract: A general approach for deriving quasi-static equivalent circuits for discontinuities in microstrip lines is presented. The formulation is based upon Galerkin's method applied in the Fourier transform domain. Numerical results are presented for a number of different configurations and compared with data available from other sources.
TL;DR: In this paper, the use of the small signal transmission line equivalent circuit model is not restricted solely to small signal a.c., d.c. and transient properties of semiconductor devices.
Abstract: It is shown that the use of the small signal transmission line equivalent circuit model is not restricted solely to the small signal a.c. analysis of semiconductor devices. Simple algorithms are described which allow it to be used to compute the d.c. and the large signal transient properties of semiconductor devices to any desired precision. The approach is demonstrated by computing the a.c., d.c. and transient properties of an N + P junction diode.
TL;DR: The torsional composite oscillator enables the mechanical damping, the strain amplitude, and the shear modulus of a specimen to be determined quickly and accurately, making it a powerful technique for measuring transient phenomena as mentioned in this paper.
Abstract: The torsional composite oscillator enables the mechanical damping, the strain amplitude, and the shear modulus of a specimen to be determined quickly and accurately, making it a powerful technique for measuring transient phenomena. In this paper the equivalent circuit for the composite oscillator is derived, and the resulting formulas for the mechanical damping and strain amplitude are confirmed by various alternative methods of calibration. Experimental arrangements and procedures are described which indicate how this technique can be used for strain amplitudes ranging from 10−12 to 10−3.
TL;DR: In this article, a two-dimensional solution of the continuity equation in the base of the lateral p-n-p transistor, including interactions with the substrate and subdiffused layer, is presented for dc excitation.
Abstract: A two-dimensional solution of the continuity equation in the base of the lateral p-n-p transistor, including interactions with the substrate and subdiffused layer, is presented for dc excitation. This method is extended to the case of steady-state sinusoidal excitation. Computed and measured results are presented for the frequency dependence of the Short-circuit small-signal current transfer ratios, and comparison of these shows reasonable agreement over the full range of measurements. An approximate equivalent circuit derived from a single-pole fit to the frequency response of short-circuit admittance parameters is inferred to be valid Up to a few megahertz for the device considered.
TL;DR: A general circuit model resembling a combline-type structure is developed using the concept ofSelf and mutual node admittances rather than self and mutual capacitances per unit length to provide easy adaptability to computer sided design.
Abstract: A general circuit model resembling a combline-type structure is developed using the concept of self and mutual node admittances rather than self and mutual capacitances per unit length. The merit of this approach lies in the relative simplicity of design formulas readily applicable to filters utilizing microstrip or stripline construction. It also offers easy adaptability to computer sided design. Equations are derived relating even-odd mode impedances and transmission line lengths to prototype elements and other design parameters.
TL;DR: A method is described for analyzing skin impedance data and applied to the determination of a steady-state electrical model for intact human skin and a sample impedance function is obtained.
Abstract: A method is described for analyzing skin impedance data and applied to the determination of a steady-state electrical model for intact human skin. An algorithm is presented for the analytical procedure, Bode analysis, and a sample impedance function is obtained. Bode plots are employed to synthesize a passive equivalent circuit from sample measurements of “black box” skin impedance magnitude and phase angle, and representative values for the circuit elements are presented.
TL;DR: A computer-aided technique for optimum placement of components at the layout stage so as to achieve zero nominal temperature coefficient in the performance parameter of interest is described, and other practical design considerations, such as optimum choice of stabilized chip temperature, are considered.
Abstract: A generalized temperature-stabilized substrate integrated circuit system containing heat sources and temperature sensors which are distributed in an arbitrary way in two-dimensions over the surface of the chip is analyzed. A computer-aided technique for optimum placement of these components at the layout stage so as to achieve zero nominal temperature coefficient in the performance parameter of interest is described, and other practical design considerations, such as optimum choice of stabilized chip temperature, are considered. The application of this technique is illustrated with the design of a precision temperature stabilized voltage reference supply. Experimental results from this circuit are presented.
TL;DR: In this paper, the departures of the operational amplifiers (OA's) from the ideal performance and their effect on VCV's in the inverting and noninverting mode are discussed.
Abstract: The departures of the operational amplifiers (OA's) from the ideal performance and their effect on VCV's in the inverting and noninverting mode are discussed. It is found that for the same ideal gain, the bandwidths for the inverting and noninverting modes are different, the former being less. Complete equivalent circuits describing the frequency dependance of the input and output impedances for both modes are given. In particular, the output impedance is shown to be inductive for the frequencies of interest, and this is also confirmed by experimental results.
01 Jan 1974
TL;DR: The first measurements on the Dayem bridge showed that the behaviour in an applied microwave field was quite different from that of the Josephson tunnel junction as mentioned in this paper, and this difference was attributed to the bridge size.
Abstract: The first measurements on the Dayem bridge showed that the behaviour in an applied microwave field was quite different from that of the Josephson tunnel junction Measurements on bridges one magnitude smaller later showed this difference to result from the bridge size A very simple equivalent circuit was furthermore shown to characterize these small bridges Analog computer calculations on this circuit will be compared to experimental results At high temperatures a rounding of steps and supercurrent presumably due to noise is observed A comparison with the theory of Ambegaokar and Halperin will be presented At low temperatures a hysteresis develops This may result from the bridge capacitance which also may give rise to subharmonic steps However, the magnitude (1 pF) inferred from the hysteresis is too small to account for the subharmonic steps actually observed In contrast to other types of junctions the bridge is mechanically very robust We have therefore been interested in the applicability of the bridge An upper limit to the sensitivity to 10 GHz radiation has been found in terms of NEP to 9 × 10-14 W/√Hz Furthermore, we have demonstrated that mixing via the Josephson effect is possible The power dependence of the sum and difference steps is in fair agreement with analog computer calculations on the equivalent circuit It has been debated whether the bridge radiates at all By the observation of a cavity induced step we have now established that bridges do radiate
01 Mar 1974
TL;DR: A piecewise-linear description is established by considering sequential circuit modes, defined by the switching action of thyristors and diodes, which could be applied to any particular chopper circuit to provide both transient and steady-state performance data.
Abstract: A computer-based method for analysing the performance of d.c. chopper circuits is proposed. In the paper, a piecewise-linear description is established by considering sequential circuit modes, defined by the switching action of thyristors and diodes. The method is quite general, and could be applied to any particular chopper circuit to provide both transient and steady-state performance data. As an illustration, the method is used to describe the performance of a d.c. series motor controlled by a chopper circuit that provides both armature and field control. Control characteristics of this circuit are established, and these are compared with practical results obtained by measurement on a 220 V, 8 A series motor.
TL;DR: In this paper, a dynamic linearized model and the associated equivalent circuit for a controlled current induction motor are presented and the controlled variables of interest are identified and open-loop transfer functions are tabulated.
TL;DR: The Ring-Scheiben-Elektrode setzt einen nichtkompensierten Widerstand in der vorgeschlagene Aquivalentstromkreis.
Abstract: Der vorgeschlagene Aquivalentstromkreis fur die Ring-Scheiben-Elektrode setzt einen nichtkompensierten Widerstand mit den nichtkompensierten Widerstanden der Ringund Scheiben-Elektrode voraus.
TL;DR: In this paper, the lumped equivalent circuit model of a superconducting tunnel junction with a voltagedependent normal conductance current represented by Ir = I0(V/V0)n is analyzed for the cases n = 2 and n → ∞.
Abstract: The lumped equivalent circuit model of a superconducting tunnel junction with a voltage‐dependent normal conductance current represented by Ir = I0(V/V0)n is analyzed for the cases n = 2 and n → ∞ Analytic expressions for the hysteresis parameter as a function of the damping factor are obtained The time‐averaged voltage‐current characteristics for n = 2 are given in closed form The results are qualitatively similar to the linear conductance case where n = 1, but the hysteresis is more pronounced for larger n