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Showing papers on "Equivalent series resistance published in 1975"


Journal ArticleDOI
TL;DR: In this paper, the dependence of resonance frequencies on number of turns is reported, and a lumped circuit model which accounts approximately for the effects is presented, which can be used to account for self-resonant behavior in the range 0.5-20 MHz.
Abstract: Coils having aluminium-foil windings exhibit multiple self-resonant behaviour in the range 0.5–20 MHz. The dependence of resonance frequencies on number of turns is reported, and a lumped circuit model which accounts approximately for the effects is presented.

51 citations


Journal ArticleDOI
TL;DR: It is concluded that, in a multicellular preparation with series resistance, the recording of a square voltage pulse does not indicate voltage control of the transmembrane potential and the presence of a shunt pathway produces inaccurate values of current density.

50 citations


Journal ArticleDOI
01 Jan 1975-Scopus
TL;DR: A special-layered Schottky solar cell has been constructed which produces 95 percent sunlight efficiency over a 1-cm2area This solar cell had a fill factor of 060 compared to 058 for a commercial p-n silicon cell as mentioned in this paper.
Abstract: A special-layered Schottky solar cell has been constructed which produces 95-percent sunlight efficiency over a 1-cm2area This solar cell has a fill factor of 060 compared to 058 for a commercial p-n silicon cell Series resistance of 5 Ω is shown to reduce the theoretical fill factor from 067 to 042 for a Schottky cell The diode quality factor n is shown to significantly increase open-circuit voltage and yet not appreciably influence the fill factor

29 citations


Journal ArticleDOI
TL;DR: In this article, it was shown that the holding current of an amorphous threshold switch is not strongly dependent on the circuit surrounding the switch, but is controlled by both the series resistance and the parallel capacitance.
Abstract: It is usually assumed that the holding current of an amorphous semiconductor threshold switch is not strongly dependent on the circuit surrounding the switch. This paper shows that the holding current is in fact controlled by both the series resistance and the parallel capacitance, according to two simple inequalities. In order to obtain low holding currents a large series resistor and minimum parallel capacitance are required, and in this way a holding current of 10 μA has been observed. Data are also presented on the effects of device dimensions and temperature on the on-state I-V curves and holding current.

22 citations


Patent
05 Nov 1975
TL;DR: In an electrolytic capacitor the electrodes are separated by spacer material made of porous polypropylene film having an electrical porosity which results in lower equivalent series resistance, particularly at low temperatures.
Abstract: In an electrolytic capacitor the electrodes are separated by spacer material made of porous polypropylene film having an electrical porosity which results in lower equivalent series resistance, particularly at low temperatures. The electrolytes associated with the porous polypropylene are those having as a solvent, 2-methoxy-proprionitride, tri-n-butylphosphate, N-methylpyrrolidone, hexamethylphosphortriamide, butylcellosolve, and N,N,-dimethylformamide.

11 citations


Journal ArticleDOI
TL;DR: In this paper, a differential method to measure the equivalent series inductance (ESL) and equivalent series resistance (ESR) of energy discharge capacitors is described and compared with other available methods.
Abstract: A differential method to measure, simply and accurately, the equivalent series inductance (ESL) and the equivalent series resistance (ESR) of energy discharge capacitors is described and compared with other available methods. The differential method measures the ESL over a wide range of inductance, including extremely low inductance values, without elaborate equipment or intricate data interpretation. The differential method also determines the ESR of fast energy capacitors at frequencies approaching the capacitor self-resonant frequency.

10 citations


Journal ArticleDOI
TL;DR: In this paper, the analysis of electrolytic capacitors as a distributed network is examined, and the parameters contributing to the series resistance (E.S.R) of various production capacitors at low and high frequencies are determined.
Abstract: The analysis of electrolytic capacitors as a distributed network is examined. The parameters contributing to the equivalent series resistance (E.S.R.) have been determined for various production capacitors at low and high frequencies.

9 citations


Journal ArticleDOI
TL;DR: In this paper, the design and fabrication of a GaAs varactor diode for u.h.f. t.v. tuners were carried out using a double epitaxial layer.
Abstract: The design and fabrication of a GaAs varactor diode for u.h.f. t.v. tuners were carried out using a GaAs double epitaxial layer. The capacitance ratio of diode. C3/C25, is 6.0 and the series resistance at 470 MHz is 0.24 Ω. These characteristics are much better than those of an Si diode and well satisfy the requirements for t.v. tuners.

6 citations


Journal ArticleDOI
TL;DR: In this paper, a new concept for integrated planar Schottky-diodes has been developed, which meets the two important requirements in the design of microwave diodes: high cutoff frequency and low parasitics.
Abstract: A new concept for integrated planar Schottky-diodes has been developed. It meets the two important requirements in the design of microwave diodes: high cutoff frequency and low parasitics. Only one epitaxial layer is needed. The Schottky contact is deposited on the slope of a mesa in order to obtain both low series resistance and low capacitance, Up to now, a Zero-bias cutoff frequency of 150 GHz has been achieved. The advantage of this type of diodes as compared to planar diodes produced by double selective epitaxy is the use of standard technology, resulting in good reproducibility and yield.

5 citations



Patent
17 Jan 1975
TL;DR: In this article, the attenuation equalizer in the circuit of an adjustable four-terminal network for correcting the frequency-related attenuation curve of cables including a bridged T circuit containing ohmic resistances and having two fixed ohmic series resistance, is presented.
Abstract: Attenuation equalizer in the circuit of an adjustable four-terminal network for correcting the frequency-related attenuation curve of cables including a bridged T circuit containing ohmic resistances and having two fixed ohmic series resistance, preferably of equal resistance value, bridged by a bridging impedance, the bridging impedance being a series-resonant circuit having an inductance, a condenser and a variable parallel resistance wherein the shunt impedance is a parallel-resonant circuit having an inductance, a condenser and a variable series resistance, the latter being adjustable by means of a common traversing device. The resistance elements of the fixed resistances and the variable resistances, the inductances, the condensers and the conductors are mounted on a single support of insulating material, and the plates, layers or the coatings of the condensers are disposed parallel and in lateral spaced relationship to the corresponding variable resistances of the bridging and shunt impedance such that they serve simultaneously as wiper tracks for the common traversing device of the variable resistances.

Journal ArticleDOI
TL;DR: An analysis of the breakdown and capacitance properties of punch-through hyperabrupt epitaxial Schottky barrier diodes has been carried out in this article, which yields an optimal impurity profile in which just-punch-through occurs at the highest voltage of operation.
Abstract: An analysis of the breakdown and capacitance properties of punch-through hyperabrupt epitaxial Schottky barrier diodes has been carried out. Results are given for the dependence of breakdown voltage of such a device on surface concentration and epitaxial layer thickness. Design curves are given for epitaxial hyperabrupt schottky varactor diodes. The design procedure yields an optimal impurity profile in which just-punch-through occurs at the highest voltage of operation. This gives a maximum dynamic range of operation still keeping the series resistance to a minimum. A corrected boundary condition to determine the profile constants associated with an n/n+ (high/low) junction is also given.

Journal ArticleDOI
TL;DR: A simple method for simulating floating inductances in integrated circuits is described in this correspondence, and excellent temperature characteristics and high reproducibility are obtained.
Abstract: A simple method for simulating floating inductances in integrated circuits is described in this correspondence. The principle of simulating inductance is the impedance conversion. Since the characteristics of this simulated inductance are independent of the active parameters of transistors, excellent temperature characteristics and high reproducibility are obtained.

Patent
20 Nov 1975
TL;DR: In this article, a continuously variable high frequency resistance attenuator is described in which the attenuation is first order independent of frequency, and the wave translating media into and out of the attenuators provide a constant characteristic impedance.
Abstract: A continuously variable high frequency resistance attenuator is described in which the attenuation is first order independent of frequency. The wave translating media into and out of the attenuator provide a constant characteristic impedance. The attenuator consists of a length of series resistance and a plurality of parallel shunt resistors, which are of adjustable value and extend between the length of series resistance and ground or extend between the length of series resistance and open circuit.

Patent
17 Apr 1975
TL;DR: In this article, a series resistance is connected in series with the inductor and a series resistor is connected with a capacitor in parallel with a variable resistance to measure the DC resistance of large inductors.
Abstract: Apparatus for measuring the DC resistance of large inductors. A series resistance is connected in series with the inductor and the combination is connected in parallel with a capacitor and a variable resistance. A DC potential is applied to the parallel network to produce a voltage drop across the series resistance, the variable resistance, and the inductor. These voltages are applied to a processing circuit which subtracts the variable resistance voltage from the inductor voltage and divides the difference voltage by the series resistance voltage. The resulting voltage is proportional to the internal resistance of the inductor and does not vary with time when the variable resistance is adjusted to make the time constant of the inductive branch equal to the time constant of the capacitive branch of the parallel network. A differentiation circuit is used to indicate when the variable resistance is set at the proper value to balance the time constants.

Journal ArticleDOI
TL;DR: In this article, the results of a study of evaluation of solar cells are presented, and the parameters considered are: short-circuit current, open circuit voltage, series resistance, forward diode characteristic ‘n’ value, junction reverse current and junction width.
Abstract: The results of a study of evaluation of solar cells are presented. The parameters considered are: short-circuit current, open circuit voltage, series resistance, forward diode characteristic ‘n’ value, junction reverse current and junction width. The advantage of the evaluation procedure presented over the method used by Mandelkorn et al., is pointed out.

Book ChapterDOI
01 Jan 1975
TL;DR: In this paper, the properties of the capacitor, such as effective series resistance (ESR) and internal inductance, have been found to be very important when used with gap lamps since the arc resistance is very small.
Abstract: An open xenon gas spark between electrodes in a large bulb conveniently forms an intense small—volume source of light, but often shows spacial instability due to heated gas flow from previous discharges, or from electrical breakdown variations. The use of multiple inter—electrode starting wires solves the spacial problems for many applications. Information is presented on the light output, the efficiency, the spectral output, the flash duration, and the size of the emitting source as a function of time, energy, and gap length. Only lamps filled with xenon, and mostly with a small addition of hydrogen, are discussed. The experimental results were taken with 6 sizes of capacitors ranging from 0.005 to 5.6mfd. The properties of the capacitor, such as effective series resistance (ESR) and internal inductance, have been found to be very important when used with gap lamps since the arc resistance is very small.

01 Jan 1975
TL;DR: In this article, the effects of series resistance on semiconductor doping profiles obtained by conventional CV analysis are discussed, and it is shown that this resistance can cause extremely large errors in the profiles.
Abstract: Abstr8acl-'Ehe effects of series resistance on semiconductor doping profiles obtained by conventional CV analysis are discussed, and it is shown that this resistance can cause extremely large errors in the profiles. It is demonstrated that the existence of such errors can be inferred from suitable I@ phase angle measurements obtained during the CV profiling process, lbnd that this information can be used to correct distorted profiles. A thoretical analysis and several computer shdattions are presented in order to illustrate the nature of the problem and the methods by which accurate profiles can be obtained. All of the behgvior predicted by computer simulations is verified by ex~e~e~t~l examples. I. INTRODTJCTION T IS1 WELL known that the voltage dependence of the 'depletion-layer capacitance in abrupt p-n junctions or Schottky-barrier contacts can be used to determine semiconductor doping profiles [I]-[7]. Briefly, the most commonly used technique consists of forming a diode of known area, A, and measuring the depletion-layer capacitance, at some suitable RF frequency, as a function of dc reverse bias. The doping profile is then obtained from

Journal ArticleDOI
TL;DR: In this article, the excitation of space-charge waves at a step in the doping density (n-v transition) in a single-carrier semiconductor (Si or Ge) which is biased close to saturation in the drift velocity, and the influence of these waves on the electrical impedance, comprise the subject of the present paper.
Abstract: The excitation of space-charge waves at a step in the doping density (n — v transition) in a single-carrier semiconductor (Si or Ge) which is biased close to saturation in the drift velocity, and the influence of these waves on the electrical impedance, comprise the subject of the present paper. The assumptions and main results of a one-dimensional analysis are given. By taking reliable boundary conditions into consideration it is shown how it is possible to obtain a negative RF resistance across the weakly doped v region at frequencies somewhat smaller than multiples of the transit, time frequency. However, due to the series resistance of the less weakly doped n region, the net RF resistance always seems to be non-negative in the analysed semiconductor structure.