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Showing papers on "Equivalent series resistance published in 2022"


Journal ArticleDOI
TL;DR: This article proposes a novel method of estimating the ESR for an AEC that uses an innovative compressed sensing approach to acquire the ripple voltage and current and reduces the cost of data sampling, transmission, and storage.
Abstract: The aluminum electrolytic capacitor (AEC) is one of the most important parts of a power electronic converter. Throughout its lifespan, the equivalent series resistance (ESR) of the AEC will increase, which will affect the performance of the power electronic converter. To guarantee the reliability of a converter, it is necessary to monitor the health state of the AEC, for which one common technique is to estimate the ESR of the AEC. Equipment with a high sampling rate is usually required because converter usually works at a high frequency. This requirement will increase the cost of ESR monitoring. To address this issue, this article proposes a novel method of estimating the ESR for an AEC. The proposed method uses an innovative compressed sensing approach to acquire the ripple voltage and current. Instead of complete reconstruction of the ripple voltage and current, only the high-frequency features in the wavelet subspace are reconstructed and used to calculate the ESR. The proposed method reduces the cost of data sampling, transmission, and storage. This method is not limited by the converter circuit structure and can be applied in various environments. Simulations and experiments were carried out to verify the effectiveness of the proposed method.

23 citations


Journal ArticleDOI
TL;DR: In this article , a quasi-online equivalent series resistance (ESR) identification method that considers the impact of capacitance based on variational mode decomposition (VMD) of forward converters is proposed.
Abstract: An quasi-online equivalent series resistance (ESR) identification method that considers the impact of capacitance based on variational mode decomposition (VMD) of forward converters is proposed in this letter. First, the capacitance impact is included in ESR derivation. Subsequently, VMD is adopted to process characteristic signals for harmonic analysis, filter out noise, and simplify circuits design. The experiments and simulation are employed to verify the proposed method. In addition, in order to overcome the disadvantages of using ideal capacitors in the traditional simulation, fractional-order capacitors are constructed to describe the nonideal characteristics of the capacitor. Meanwhile, the identification result is compared with the LCR meter measurement. Thus, the superiority of the proposed ESR quasi-online identification method and the construction method of fractional-order capacitors are confirmed through comparative analysis.

18 citations


Journal ArticleDOI
TL;DR: In this article , the authors proposed a double-absorber CdTe and FeSi2-based solar cells for improving photovoltaic performance, which achieved a significant quantum efficiency enhancement by the rise in solar spectrum absorption at longer wavelengths.
Abstract: Inorganic CdTe and FeSi2-based solar cells have recently drawn a lot of attention because they offer superior thermal stability and good optoelectronic properties compared to conventional solar cells. In this work, a unique alternative technique is presented by using FeSi2 as a secondary absorber layer and In2S3 as the window layer for improving photovoltaic performance parameters. Simulating on SCAPS-1D, the proposed double-absorber (Cu/FTO/In2S3/CdTe/FeSi2/Ni) structure is thoroughly examined and analyzed. The window layer thickness, absorber layer thickness, acceptor density ( N A), donor density ( N D), defect density ( N t), series resistance ( R S), and shunt resistance ( R sh) were simulated in detail for optimization of the above configuration to improve the PV performance. According to this study, 0.5 µm is the optimized thickness for both the CdTe and FeSi2 absorber layers in order to maximize the efficiency ( η). Here, the value of the optimum window layer thickness is 50 nm. For using CdTe as a single absorber, η is achieved by 13.26%. However, for using CdTe and FeSi2 as a dual absorber, η is enhanced and the obtaining value is 27.35%. The other parameters are also improved and the resultant value for the fill factor is 83.68%, the open-circuit voltage ( V oc) is 0.6566 V, and the short circuit current density ( J sc) is 49.78 mA/cm2. Furthermore, the proposed model performs well at 300 K operating temperature. The addition of the FeSi2 layer to the cell structure has resulted in a significant quantum efficiency enhancement because of the rise in solar spectrum absorption at longer wavelengths ( λ). The findings of this work offer a promising approach for producing high-performance and reasonably priced CdTe-based solar cells.

16 citations


Journal ArticleDOI
TL;DR: In this article , a fitting procedure was proposed to identify both single-diode model parameters and PV module temperature and irradiance utilizing an iterative method instead of approximate equations, which guarantees accurate results.

13 citations


Journal ArticleDOI
TL;DR: In this article , a degradation mode occurring at the cell level in fielded multi-Si modules was investigated, showing a progressive, series-resistance-related power degradation as shown via module- and cell-level IV curves, along with electroluminescence (EL) and PL imaging at the module, cell, and cell core sample scales.
Abstract: In this case study, we investigate a degradation mode occurring at the cell level in fielded multi-Si modules. The modules exhibit a mix of affected and unaffected cells. Affected cells show a progressive, series-resistance-related power degradation as shown via module- and cell-level IV curves, along with electroluminescence (EL) and PL imaging at the module, cell, and cell core sample scales. Scanning electron microscopy and energy-dispersive X-ray spectroscopy reveal a difference in the oxides in the silver paste used in screen printing of the gridline contacts. The paste in the affected cells is lead rich, whereas the paste in the unaffected cells is zinc rich. This suggests that the cells were screen printed with different silver paste compositions and possibly firing conditions, and that the different composition correlates with the susceptibility to degradation. Our results indicate degradation of the contact at the oxide-silver interface, causing a severe increase in series resistance across the cell that continues to progress over time.

13 citations


Journal ArticleDOI
01 Feb 2022-Optik
TL;DR: In this article , the role of the back contact material work function on perovskite solar cells performance was investigated and it was found that defects heavily affect the solar cell characteristics, and the VOC falls rapidly with increasing defects density.

12 citations


Journal ArticleDOI
TL;DR: In this article , the integrability of different alternatives of cadmium sulfide (CdS), namely, oxygenated CdS:O and Cadmium ZnS, as the potential window layers in CdTe thin film solar cells using SCAPS-1D and experimental fabrication was investigated.

12 citations


Journal ArticleDOI
TL;DR: In this paper , the Schottky diodes of ZnS/p-Si have been fabricated using the chemical bath deposition (CBD) technique at two different deposition durations under both stirring and non-stirring conditions.
Abstract: Heterojunction diodes of ZnS/p-Si have been fabricated using the chemical bath deposition (CBD) technique at two different deposition durations under both stirring and non-stirring conditions. The x-ray diffraction (XRD) patterns indicate the deposited ZnS films exhibit good crystallinity with the growth direction along the (111) planes of a cubic zinc blend structure. The crystallite size of all the deposited ZnS thin films have been calculated using the Scherer formula and found to be in the range of 2.2–2.7 nm which is very close (∼4 nm) to the size estimated using transmission electron microscopy (TEM). The surface morphology of the deposited ZnS thin films were studied by scanning electron microscopy (SEM) and it was observed that spherical nanoparticles agglomerated with the increase in deposition time. Furthermore, the optical properties of the deposited ZnS thin films were studied using UV-visible (UV-VIS) and photoluminescence (PL) spectroscopy. The effective calculated band gap was found in the range from 3.7–3.82 eV for all the samples, however PL spectra shows multiple emissions in the as-deposited ZnS films, indicating the presence of intrinsic defects, The characteristics of the fabricated ZnS/p-Si heterojunction diode was studied by measuring the dark current-voltage (I–V) relation using thermionic emission model. Electrical parameters such as barrier height, saturation current, ideality factor and series resistance were extracted from the I–V characteristics of the fabricated Schottky diodes. The barrier potential for all the ZnS/p-Si heterojunction diodes range between 0.829–0.857. Moreover, the calculated ideality factor was found very close to the ideal value of the diode (1.34 and 1.43) in the devices fabricated under stirring conditions.

12 citations


Journal ArticleDOI
TL;DR: A metal polymer-semiconductor (MPS) structure based on 5 wt% graphene (Gr) doped polyvinyl alcohol (PVA) thin film was fabricated by using the electrospinning method as discussed by the authors .

11 citations


Journal ArticleDOI
TL;DR: In this article , the authors investigated the effect of temperature on Schottky diode electronic parameters, such as ideality factor (n), barrier height (∅B), series resistance (RS), and saturation current (IS), on Beryllium-doped Al0.29Ga0.71.

10 citations


Journal ArticleDOI
TL;DR: In this paper , two methods are presented to quantify losses due to the finite resistance of the semiconducting layers of the perovskite solar cell as well as its contacts.
Abstract: The enhancement of the fill factor in the current generation of perovskite solar cells is the key for further efficiency improvement. Thus, methods to quantify the fill factor losses are urgently needed. Two methods are presented to quantify losses due to the finite resistance of the semiconducting layers of the solar cell as well as its contacts. The first method is based on the comparison between the voltage in the dark and under illumination analyzed at equal recombination current density and results in a voltage‐dependent series resistance. Furthermore, the method reveals the existence of a strong photoshunt under illumination. The second method is based on measuring the photoluminescence of perovskite solar cells as a function of applied voltage. Thereby, the recombination current is determined as a function of voltage from short circuit to open circuit, and the presence of the photoshunt is explained with a high resistance of the electron and/or hole transport layers combined with field screening in the absorber.

Journal ArticleDOI
TL;DR: In this paper , an improved and simple exponential model for the charging and discharging behavior of series-connected modules of supercapacitors under varying load conditions and over extended periods of time is presented.

Journal ArticleDOI
TL;DR: In this article , a perovskite solar cells with P-I-N device architecture were fabricated with thermally evaporated metal electrodes from different sources like silver nanoparticles and bulk silver shots.
Abstract: In the field of photovoltaics, methylammonium lead iodide (MAPbI3) is the most emerging light absorber material because of its excellent optoelectronic properties. Perovskite solar cells with P–I–N device architecture were fabricated with thermally evaporated metal electrodes from different sources like silver nanoparticles and bulk silver shots. Film topography, surface morphology, structure, and grain size were observed using various characterization techniques. Top electrodes with better roughness matching with the transport layer were obtained by thermal evaporation of metal nanopowder. Various electrical characterization techniques, including current density (J) vs voltage (V) and capacitance measurements, were carried out under light and dark conditions for investigating the device performance. Devices with electrodes thermally evaporated using nanopowder showed enhancement in device performance with a lower series resistance and a higher shunt resistance, as observed from J–V characteristics. An open-circuit voltage improvement of ∼14% and a power conversion efficiency enhancement of ∼13% have been observed. A considerable improvement in contact resistances has also been noted. The idea about the recombination of devices can be obtained from J–V measurements with varying illumination intensities. The higher carrier concentration in the device based on a Ag NP electrode can be related to the contribution of the less recombination because of the reduced number of traps. These findings support the purpose of using metal nanopowder instead of the bulk form of metals for thermally evaporated top electrodes in perovskite solar cells.

Journal ArticleDOI
TL;DR: In this paper , the authors analyzed the forward part of the I-V curves of Ni/Au/4H-SiC Schottky diodes in a small temperature interval and determined mean barrier height, standard deviation of the barrier height distribution and series resistance of the diode as a function of temperature.



Journal ArticleDOI
TL;DR: In this article , the authors proposed a method to identify single-diode model parameter values along with the operating irradiance and temperature values from measured currentvoltage (I-V) curves without requiring any other measurement.

Journal ArticleDOI
TL;DR: In this paper , the numerical investigation on a solar cell based on SnS was carried out in this paper utilizing SCAPS-1D simulation software, and the originality of this work lies in the top efficiency reached after adding a BSF of the same type of absorber layer.

Journal ArticleDOI
TL;DR: In this paper, an asymmetric type metal-semiconductor-metal (MSM) Schottky barrier ultraviolet photodetector has been fabricated at room temperature, where the surface morphological and oxidation states of Cr and Ni metal layers were investigated using atomic force microscopy and X-ray absorption spectroscopy, respectively.

Journal ArticleDOI
TL;DR: In this article, the power consumption of OTP memristor was reduced by adding zinc oxide layer to the W/OTP interface to reduce the photoresponse property.

Journal ArticleDOI
TL;DR: In this paper , the effect of employing different high resistance metal oxide (HRMO) layers on the quality of the front contact in solar cells with an fluorine-doped tin oxide (FTO)/(HRMO)/CdS/Sb2Se3/Au device architecture is presented.
Abstract: Herein, an in‐depth experimental investigation into the effect of employing different high resistance metal oxide (HRMO) layers on the quality of the front contact in solar cells with an fluorine‐doped tin oxide (FTO)/(HRMO)/CdS/Sb2Se3/Au device architecture is presented. The application of ZnO or TiO2 HRMO layers between FTO substrates and CdS improves the overall device performance. Short‐circuit current gains of ≈20%, orders of magnitude higher shunt resistances (≈104 Ω cm2), and greatly improved device stabilities—maintaining over 95% of their initial efficiency over 137 days are observed. A suppression of the unfavorable (120) orientation of the photoactive Sb2Se3 layer is observed in devices with HRMO interlayers. The application of HRMO layers is crucial to prevent both ohmic and non‐ohmic current leaks and maintain device stability over time. Cross‐over in the current‐voltage (JV) curves observed in the case of TiO2 indicates the presence of a high barrier for the diode current in these devices. Wavelength‐dependent JV curves coupled with capacitance measurements and simulations show that this barrier can be attributed to a high density of interfacial acceptor states. In contrast, ZnO deposition is found to reduce interface defects and enhance the quality of the front contact, while boosting performance and increasing device longevity.

Journal ArticleDOI
TL;DR: In this paper , an organic diode based on copper phthalocynanine (CuPc) molecule is manufactured by spin coating route and the electrical characterization of Au, CuPc/Si/Al under dark and light is achieved.

Journal ArticleDOI
TL;DR: In this article , the authors presented numerical simulation study of novel chalcogenide materials Ag2MgSnS4 and Ag2mgSnSe4 based thin film solar cells using SCAPS-1D simulation package.

Journal ArticleDOI
TL;DR: This work combines self-aligned asymmetric nanogap electrodes produced by adhesion-lithography, with a high mobility organic semiconductor, and demonstrates RF Schottky diodes able to operate in the 5G frequency spectrum.
Abstract: The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes hinder their deployment in emerging radio frequency (RF) electronics. Here, these limitations are overcome by combining self‐aligned asymmetric nanogap electrodes (≈25 nm) produced by adhesion lithography, with a high mobility organic semiconductor, and RF Schottky diodes able to operate in the 5G frequency spectrum are demonstrated. C16IDT‐BT is used, as the high hole mobility polymer, and the impact of p‐doping on the diode performance is studied. Pristine C16IDT‐BT‐based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (fC) of >100 and 6 GHz, respectively. This extraordinary performance is attributed to the planar nature of the nanogap channel and the diode's small junction capacitance (<2 pF). Doping of C16IDT‐BT with the molecular p‐dopant C60F48 improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic fC of >100 and ≈14 GHz respectively, while the DC output voltage of an RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large‐area RF electronics of the future.

Journal ArticleDOI
TL;DR: In this paper , an accurate model of photovoltaic panels based on a single diode model is proposed, which is the link between two models which are the ideal model and the resistance network.
Abstract: Building an accurate mathematical model of photovoltaic modules is an essential issue for providing reasonable analysis, control and optimization of photovoltaic energy systems. Therefore, this study provides a new accurate model of photovoltaic Panels based on single diode Model. In this case, the proposed model is the link between two models which are the ideal model and the resistance network. All parameters are estimated based on hybrid Analytical/Numerical approach: three parameters photocurrent, reverse saturation current and ideality factor are obtained using an Analytical approach based on the datasheet provided by the manufacturer under Standard Test Conditions. The series and shunt resistances are obtained by using a Numerical approach similar to the Villalva's method in order to achieve the purpose of modeling the resistance network part. Our model is tested with data from the manufacturer of three different technologies namely polycrystalline, Mono-crystalline silicon modules and thin-film based on Copper Indium Diselenide, and for more accurate performance evaluation we are introducing the Average Relative Error and the Root Mean Square Error. The simulated Current-Voltage and Power-Voltage curves are in accordance with experimental characteristics, and there is a strong agreement between the proposed model and the experimental characteristics. The computation time is 0.23 s lower than those obtained using others approach, and all obtained results under real environment conditions are also compared with different models and indicated that the proposed model outperforms the others approach such as villalva’s and kashif’s method.


Journal ArticleDOI
TL;DR: In this article , a metal-semiconductor-metal (MSM) Schottky barrier ultraviolet photodetector has been fabricated at room temperature, which is used to measure surface morphological and oxidation states of Cr and Ni layers using atomic force microscopy and X-ray absorption spectroscopy, respectively.

Journal ArticleDOI
TL;DR: In this paper , an interesting rectifying sketch around 2544 in dark and 4082 in light is recorded as shown by I-V curve. And the authors investigated the properties of ZnO/p-Si/Al heterojunction photodiode properties.
Abstract: The investigation reports on fabrication and measurements of heterojunction diode based on ZnO layer. The layers are ultrasonic sprayed onto p-type silicon substrates at 350 ​°C and the front contacts made from aluminum have been thermally evaporated in low pressure vacuum. The Al/ZnO/p-Si/Al device is then made-up and characterized by current-voltage and capacitance-voltage under dark, light and temperature environments. The ideality factor exceeds the unity which confirms the non-ideal comportment of such device based on nZnO layer. An interesting rectifying sketch around 2544 in dark and 4082 in light is recorded as shown by I–V curve. The electrical parameters of such device are determined in dark and light (60–150 ​mW/cm 2 ) conditions displaying the values of ideality factor (n i ) of 3.5 (1.6), barrier height Φ B of 0.74 (0.89) V, series resistance R s of 5 (1.6) kΩ. Influence of temperature on the current-voltage curve is evidenced within the 22–107 ​°C range. To boost this study, the measurement of C–V-f characteristics are measured and interface state densities of ZnO/p-Si diode in dark, light and temperature environments are investigated. Richardson plot evidences numerous parameters of ZnO/pSi heterojunction diode. • Al/ZnO/p-Si/Al heterojunction based on ZnO layers is fabricated by spray pyrolysis process. • I–V characteristics under room temperature in dark, light and under temperatures are measured. • C–V characteristics under room temperature in dark and under low and high frequencies are investigated. • Interface state density properties are also investigated inside the heterojunction. • Such results give to ZnO/Si/Al heterojunction photodiode properties.

Journal ArticleDOI
TL;DR: In this paper , the I-V characteristics of Ni/PEDOT:PSS/CV/p-Si/Al diodes were investigated for different temperature values, and it was determined that the basic diode parameters are strongly dependent on temperature.

Journal ArticleDOI
TL;DR: In this article , a simulation-based study on ZnS/CZTS-bilayer solar cells reveals the effect of band gap of dual CZTS layers, the thickness of different layers, front and back contact metal work-function, which helps to optimize the solar cell for these parameters.