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Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.


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Patent
05 Oct 2004
TL;DR: In this paper, a method of preparing electrolytic capacitors that involves forming the conductive polymer of the solid electrolyte layer in situ by means of chemical oxidative polymerization or electrochemical polymerization is described.
Abstract: Electrolytic capacitors having low equivalent series resistance and low leakage current are described. The electrolytic capacitors include a solid electrolyte layer of a conductive material in particular a conductive polymer, and an outer layer that includes binders, polymeric anions and conductive polymers (e.g., polythiophenes). Also described is a method of preparing electrolytic capacitors that involves forming the conductive polymer of the solid electrolyte layer in situ by means of chemical oxidative polymerization or electrochemical polymerization. Electronic circuits that include the electrolytic capacitors are also described.

193 citations

Journal ArticleDOI
11 Sep 2009-Langmuir
TL;DR: It is concluded that the pseudocapacitance through faradic charge transfer is the most important factor to enhance the capacitance by N- or B-doping.
Abstract: Anodic aluminum oxide (AAO) with uniform straight nanochannels was completely coated with pure, N-doped, or B-doped carbon layer. Their electric double layer capacitances are measured in aqueous (1 M sulfuric acid) and organic (1 M Et4NBF4/polypropylene carbonate) electrolyte solutions in order to investigate the capacitance enhancement mechanisms caused by N- or B-doping. Since the three types of carbon-coated AAOs (pure, N-doped, or B-doped) have exactly the same pore structure, the observed capacitance enhancement was ascribable to only the following factors: (i) better wettability, (ii) the decrease of equivalent series resistance, (iii) the contribution of space-charge-layer capacitance, and (iv) the occurrence of pseudocapacitance. From the measurements of the wettability and the electrical resistance of the coated AAOs together with the electrochemical investigation (the cyclic voltammetry, the galvanostatic charge/discharge cycling, and the impedance analysis), it is concluded that the pseudocapac...

193 citations

Proceedings ArticleDOI
10 May 1993
TL;DR: In this paper, the authors used the measured "J/sub SC/-V/sub OC/ curve" of a solar cell as an approximation to the unknown R/sub S/-corrected I-V curve and determined the "lumped series resistance" in dark and illuminated operating conditions (R/sub s.dark/ and R/ sub s.light/) from the voltage shift between the "J /sub SC/V/ sub O/C curve" and the dark and illumination I -V curve, respectively.
Abstract: Measurements of the series resistance R/sub S/ are important for the localisation of dominant loss mechanisms in photovoltaic devices. The new measurement technique presented in this work uses the measured "J/sub SC/-V/sub OC/ curve" of a solar cell as an approximation to the unknown R/sub S/-corrected I-V curve and determines the "lumped series resistance" in dark and illuminated operating conditions (R/sub s.dark/ and R/sub s.light/) from the voltage shift between the "J/sub SC/-V/sub O/C curve" and the dark and illuminated I-V curve, respectively. Owing to multidimensional effects in practical devices, the lumped series resistance depends on the operating condition of the cell (i.e., dark or illuminated I-V measurements) and on the current density flowing through the device. This work not only provides a new, powerful method for the determination of the lumped series resistance of photovoltaic devices, but also considerably improves the general understanding of ohmic power loss effects in silicon solar cells. >

192 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the electrical properties of poly-crystalline (poly) Si/mono-c-Si junctions and the influence of the interfacial oxide between the poly-Si and the c-Si on these characteristics.

187 citations

Journal ArticleDOI
TL;DR: In this paper, an equivalent resistance circuit of a solar cell which takes into account all the sources of linear resistance in solar cells is developed, and equations for the total series resistance of an n dimensional solar cell are evolved where n represents the number of grids in the cell.
Abstract: An equivalent resistance circuit of a solar cell which takes into account all the sources of linear resistance in a solar cell is developed. Equations which will determine the resistance of the diffused layer of a solar cell are also developed assuming a constant gradient across the diffused layer. The equations for the total series resistance of an n dimensional solar cell are evolved where n represents the number of grids in the cell. The equations have been utilized in conjunction with experimentally determined values of the component resistances to predict the total series resistance of several cell types. Very good correlation was obtained between the experimentally measured total series resistance and the theoretically predicted total series resistance of these cells.

181 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023121
2022235
2021126
2020170
2019171
2018206