Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
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08 Dec 2003
TL;DR: In this paper, a highly accurate predictive inductor model for integrated symmetric inductors with center tap and patterned ground shield is presented based on a modified Greenhouse algorithm where current crowding due to skin and proximity effects is included by considering the spread in parallel sub-loop inductances.
Abstract: A highly accurate predictive inductor model for integrated symmetric inductors with center tap and patterned ground shield is presented This model is based on a modified Greenhouse algorithm where current crowding due to skin and proximity effects is included by considering the spread in parallel sub-loop inductances This scalable symmetrical inductor equivalent circuit model covers all operating conditions, and yet only requires dimensions and back-end layer thicknesses We have verified this scalable model for a large number of inductors from three industrial IC processes and found excellent agreement with measured inductances, Q-factors, and resonance frequencies
39 citations
05 Dec 1993
TL;DR: In this article, the optimization of device series resistance in ultra-thin film SOI devices is studied through 2D simulations and process experiments, where very thin silicides that do not fully consume the SOI film are needed.
Abstract: The optimization of device series resistance in ultra-thin film SOI devices is studied through 2-D simulations and process experiments. To achieve low series resistance, very thin silicides that do not fully consume the SOI film are needed. A novel cobalt salicidation technology using titanium/cobalt laminates is used to demonstrate sub-0.2 /spl mu/m, thin-film SOI devices with excellent performance and very low device series resistance. >
39 citations
TL;DR: Results indicate interface-trap formation at high dose rates (irradiations) is reduced due to positive charge build-up in the semiconductor/insulator interfacial region (due to the trapping of holes) that reduces the flow rate of subsequent holes and protons from the bulk of the insulator to the Si/SnO2 interface.
39 citations
TL;DR: In this paper, a new approach to realize vertically oriented Schottky diodes, with ohmic contact formed directly below the anode, that can be readily integrated into planar millimeter and submillimeter-wave circuits was reported.
Abstract: This work reports on a new approach to realizing vertically oriented Schottky diodes, with ohmic contact formed directly below the anode, that can be readily integrated into planar millimeter and submillimeter-wave circuits. The diode structure is based on backside processing and bonding of the diode epitaxy to a host, high-resistivity silicon substrate that supports both the vertical diode and its associated circuitry. A set of prototype diodes of different anode diameters are fabricated for characterization at both dc and (for the first time) submillimeter-wave frequencies (325–750 GHz) using micromachined on-wafer probes. Device equivalent circuit parameters extracted from these measurements are in good agreement with those expected from fundamental Schottky barrier diode theory and indicate the vertically oriented diodes yield series resistance values that are comparable to or lower than planar-oriented diodes of similar dimensions.
39 citations
TL;DR: In this article, the equivalent resistance between the origin and the lattice site (2n, 0, 0) in an infinite Face Centered Cubic (FCC) network consisting from identical resistors each of resistance R, has been evaluated analytically and numerically.
Abstract: The equivalent resistance between the origin and the lattice site (2n,0,0), in an infinite Face Centered Cubic (FCC) network consisting from identical resistors each of resistance R, has been evaluated analytically and numerically. The asymptotic behavior of the equivalent resistance has been also investigated. Finally, some numerical values for the equivalent resistance are presented.
39 citations