Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

60Co γ-ray irradiation effects on the interface traps density of tin oxide films of different thicknesses on n-type Si (111) substrates

Abstract: We report the first investigation of the gamma irradiation effects on interface state density and series resistance determined from capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics in Au/SnO2/n-Si (MOS) structures prepared at various SnO2 layer thicknesses by spray deposition technique. It was fabricated three samples depending on deposition time. The samples were irradiated using a 60Co γ-ray source irradiation with the total dose range was 0–500 kGy at room temperature. The C–V and G–V measurements of the samples were performed at high frequency (500 kHz) at room temperature before and after irradiation. The measurement capacitance and conductance are corrected for series resistance. The thicknesses of SnO2 films obtained from the measurement of the oxide capacitance in the accumulation region for MOS Schottky diodes were 19, 52, 191 A, for D1, D2 and D3 samples, respectively. It has been seen that the value of the series resistance Rs of samples D1 (50 Ω), D2 (66 Ω) and D3 (157 Ω) increases with increasing the oxide layer thickness and increases from 50 Ω to 62.7 Ω with increasing irradiation dose. The single frequency method of Hill-Coleman was used to determine the interface state density (Dit).

Compact self-tuned electrical resonator for buried object locator applications

Abstract: A self-tuning resonator for use in a transmitter apparatus for inducing alternating currents in a buried conductor. The resonator is dynamically tuned at frequencies below 500 kHz by exploiting the inherent voltage-variability of net capacitance in multilayer ceramic capacitors. The transmitter apparatus provides improved efficiency and induced output power suitable for use in a man-portable locator system, providing a very high magnetic field output from a physically small battery-powered resonator at frequencies under 500 kHz. The resonator exhibits a very low equivalent series resistance (ESR) and is adaptively retuned to a predetermined resonant frequency responsive to any changes in resonance arising from phenomena such as component heating, thereby supporting very high tank circuit currents from battery-powered source to produce very high magnetic flux output.

Series Resistance Imaging in Solar Cells by Lock-in

Abstract: Two operation modes of lock-in thermography are introduced to detect regions of high series resistance in solar cells These are differential techniques, working in the dark and under illumination, where images taken under two different conditions are used to calculate an image, which is especially sensitive to series resistance variations Though the series resistance cannot be measured quantitatively by these techniques, regions of increased emitter contact resistance can be reliably detected A realistic electrothermal modelling of a series resistance defect in a solar cell with and without illumination is presented The new thermographic techniques are compared with established techniques for series resistance imaging Especially the technique working under illumination gives results that agree very well with those of other methods Copyright # 2005 John Wiley & Sons, Ltd

Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode

Abstract: We report on the improved device performance of GaN-based ultraviolet heterojunction photodiodes using a semi-transparent p-contact device structure. At a reverse bias of 10 V, these photodiodes exhibit a low dark current density of 0.3 nA/cm2. The external quantum efficiency is 38% at the band edge, with only a slight decrease at the shorter wavelengths. The forward current is >10 mA at Vf=5 V. Fitting of the forward current–voltage data to the diode equation yields a very low series resistance (Rs=62Ω), which results in a very fast decay of the time response. The improved performance afforded by the thin, semi-transparent, p-contact layer is due to an increase in the uniformity of the lateral field distribution.

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

Abstract: We have fabricated Ni Schottky rectifiers on 2.7/spl times/ 10/sup 16/ cm/sup -3/ n-type 6H-SiC epilayer using an effective edge termination based on an oxide ramp profile around the Schottky contact. Several anneals of the Schottky contacts were experimented. In particular the diodes annealed at 900/spl deg/C showed excellent reverse characteristics with a nearly ideal breakdown at about 800 V. Forward characteristics follow the thermionic emission theory with the ideality factor close to one at low biases. An accurate analytical model and complete parameter extraction of the forward characteristics of the Ni/6H-SiC Schottky barrier diodes (SBDs) for low and high-level current densities are presented. The model takes into account the high-level injection effects and the current dependence of the series resistance. Direct extraction of the SBD parameters is carried out. A very good agreement between the simulated forward curves using extracted parameters and measured data up to 500 A/cm/sup 2/ is obtained.