Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
Papers published on a yearly basis
Papers
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TL;DR: In this paper, a simple methodology based on dual-frequency C-V measurement and four-element circuit model was proposed to extract the equivalent oxide thickness (EOT) in the presence of gate leakage current and series resistance.
Abstract: The standard capacitance-voltage (C-V ) technique can no longer determine accurately the equivalent oxide thickness (EOT) for an advanced CMOS transistor with ultrathin gate dielectric where there is high gate leakage current, as well as series resistance; this situation will get worse as the CMOS transistor's scaling trend continues. This paper describes a simple methodology based on dual-frequency C-V measurement and four-element circuit model to extract accurately the EOT in the presence of gate leakage current and series resistance. This method can be effective with a current density of 1000 A/cm/sup 2/ for a 10 /spl mu/m /spl times/10 /spl mu/m capacitor. Such a high current density will satisfy the projected gate leakage current requirements for many generations of CMOS technologies, as specified in the 2003 International Technology Roadmap for Semiconductors.
39 citations
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TL;DR: In this paper, a new method of extracting the MOSFET series resistance is proposed, which requires only simple dc measurements on a single test device, without requiring quantities such as gate-oxide thickness, physical gate length, or effective channel length.
Abstract: A new method of extracting the MOSFET series resistance is proposed. This method requires only simple dc measurements on a single test device. Experimental demonstration is presented, without requiring quantities such as gate-oxide thickness, physical gate length, or effective channel length. The merit of the method stems from the specifically arranged bias conditions in which the channel carrier mobility remains constant for high vertical electric fields. It is this unique property which makes the proposed method suitable for short-channel devices.
39 citations
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TL;DR: In this article, the influence of the organic solar cell device layout on the photovoltaic parameters was systematically varied, and the authors were able to correlate the series resistance with the geometry of the device using a simple model for its calculation.
Abstract: In order to study the influence of the organic solar cell device layout on the photovoltaic parameters, we systematically varied its geometry. By knowledge of all sheet resistances in the device, we were able to correlate the series resistance with the geometry of the device using a simple model for its calculation. Deviations between experiment and calculation could be related with the solar cell geometry and understood by postulating curved transport ways of the current within the largely resistive ITO-layer. Thus, a further refinement of the calculation is required in order to minimize the deviation between calculation and experiment. Short solar cell lengths and ITO-bridges yield minimal series resistance and best conversion efficiency.
39 citations
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TL;DR: In this paper, the authors characterized the interface states in Au/SnO 2 /n-Si (MOS) structures as a function of frequency and found that at each frequency, the measured capacitance and conductance decrease with increasing frequency due to a continuous distribution of the interfaces.
38 citations
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TL;DR: In this article, a passive impedance matching (PIMM) technology is proposed to achieve automatic current sharing for multiphase resonant converters through matching the input impedance of each phase.
Abstract: A passive-impedance-matching (PIM) technology is proposed to achieve automatic current sharing for multiphase resonant converters through matching the input impedance of each phase. The series inductors (or series capacitors) of each phase are connected in parallel to achieve a couple of virtual resistors including positive and negative resistors and variably series inductors (or capacitors). A virtual positive (or negative) resistor increases (or decreases) the input impedance of the respective phase, and the variably series inductors can also compensate the component tolerance such that the impedance of each phase is matched. The current-sharing performance of the common-inductor two-phase LLC resonant converter (as one example) is evaluated under the first-harmonic-approximation assumption. The virtual positive and negative resistors and variably virtual inductors are calculated. The proposed method can share the primary resonant current and the load current for all phases without any additional circuit and control strategy. The PIM technology is extended to other resonant converter topologies, including common-inductor or common-capacitor series-resonant converter, LCC, CLL resonant converter, etc. A 600-W 12-V common-inductor two-phase LLC resonant converter prototype is built to verify the feasibility and demonstrate advantages of PIM technology.
38 citations