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Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.


Papers
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Journal ArticleDOI
TL;DR: In this article, an S-parameter measurement-based procedure for the extraction of the bias dependent and bias independent components of the MOSFET series resistance is presented, which allows the direct and analytical determination of these components from measurements performed on a single device.
Abstract: An S-parameter measurement-based procedure for the extraction of the bias dependent and bias independent components of the MOSFET series resistance is presented. The proposed procedure allows the direct and analytical determination of these components from measurements performed on a single device. The method is verified by achieving good agreement between simulated and experimental data for a 0.18-/spl mu/m channel-length MOSFET.

37 citations

Patent
09 Mar 1984
TL;DR: In this paper, an NE555 integrated circuit with resistances and capacitances is presented for controlling lamp flash interval and duration, where the capacitance is provided by two capacitors.
Abstract: A circuit for controlling lamp flash interval and duration which comprises an NE555 integrated circuit in combination with resistances and capacitances. In the circuit, a resistor and a capacitive switch in series therewith govern flash interval. The capacitive switch includes a normally closed centrifugal switch which, when closed, presents a given capacitance in series with the resistor and when open presents a reduced capacitance in series with the resistor. The capacitance is provided by two capacitors. In one embodiment, when the switch is closed, one capacitor is in series with the resistor and the other is bypassed and when the switch is open, both capacitors are in series with each other and with the resistor. In the other embodiment, when the switch is closed, the two capacitors are parallel with each other and in series with the resistor and when the switch is open, one of said parallel capacitors is bypassed.

37 citations

Journal ArticleDOI
TL;DR: In this article, a silicon photodiode detector is presented for use in scanning electron microscopy (SEM), which is achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiodes technology to deposit nanometer-thin photosensitive anodes.
Abstract: A silicon photodiode detector is presented for use in scanning electron microscopy (SEM). Enhanced imaging capabilities are achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiode technology to deposit nanometer-thin photosensitive anodes. As a result, imaging using backscattered electrons is demonstrated for 50-eV electron landing energy values. The detector is built up of several closely packed photodiodes, and to obtain high scanning speed, each photodiode is engineered with low series resistance and low capacitance values. The low capacitance (<; 3 pF/mm2) is facilitated by thick, almost intrinsically-doped epitaxial layers grown to achieve the necessarily wide depletion regions. For the low series resistance, diode metallization has been patterned into a conductive grid directly on top of the nanometer-thin PureB-layer front-entrance window. Finally, a through-wafer aperture in the middle of the detector is micromachined for flexible positioning in the SEM system.

37 citations

Journal ArticleDOI
TL;DR: In this paper, a spraycasting of single walled nanotubes (SWNTs) or silver nanowires (AgNWs) onto either side of free-standing polymer films was used to produce flexible, transparent, dielectric capacitors.
Abstract: We have prepared flexible, transparent, dielectric capacitors by spraycasting very thin networks of single walled nanotubes (SWNTs) or silver nanowires (AgNWs) onto either side of free-standing polymer films. Impedance spectroscopy showed these structures to behave as a capacitor in combination with a series resistance. Those capacitors with SWNT electrodes displayed optical transmittance between 57% and 74%, capacitances ranging from 0.4 to 1.1 μF/cm2 and series resistances ranging 400 Ω/◻-10 kΩ/◻. However, using AgNW electrodes gave similar transmittance and capacitance but series resistance as low as 60 Ω/◻. Finally, the properties of these capacitors were invariant under flexing.

37 citations

Patent
19 Aug 1985
TL;DR: In this article, a high power single spatial mode semiconductor laser provides strong lateral index guiding to maintain single transverse mode output and yet has a large cavity area, which provides low series resistance, low thermal resistance, and lower operating current densities and photon densities.
Abstract: A high power single spatial mode semiconductor laser provides strong lateral index guiding to maintain single transverse mode output and yet has a large cavity area. The large cavity area provides low series resistance, low thermal resistance, and lower operating current densities and photon densities than can be achieved by conventional cavity designs. The result is a laser which can operate at high output power at a single transverse mode. In the plane of the p-n junction, the active layer has a cross-section including a waveguide section of width between 1-2 microns which provides lateral mode stability and discrimination against high order transverse modes with a directly adjacent amplifier section consisting of a layer of about 5-20 microns width and several hundred microns in length. Due to the large cross section area of the amplifier section, the majority of the current flows through the amplifier section where most of the heat is generated. The device has only a few ohms series resistance and significantly lower thermal impedances than conventional narrow cavity design.

37 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023121
2022235
2021126
2020170
2019171
2018206