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Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.


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Journal ArticleDOI
TL;DR: In this article, field plate and guard ring edge-terminated Ni/4H-nSiC Schottky barrier diodes (SBD) were fabricated using standard photolithography process.
Abstract: In this work, field plate and guard ring edge-terminated Ni/4H-nSiC Schottky barrier diodes (SBD) were fabricated using standard photolithography process. Strange peaks in capacitance–conductance curves, capacitance roll-off, and a high value of ideality factor (η = 1.3) in fabricated SBD were seen as a signature of interface trap states (Nss) at the residual oxide (2.2 nm)/4H-nSiC interface and series resistance (Rs). Schottky capacitance spectroscopic, High–low capacitance–voltage (C–V) and forward-bias current–voltage (I–V) techniques, in the frequency range from 100 Hz to 1 MHz, determines Nss of the order of 1012 cm−2 eV−1 and were found exponentially distributed in the bandgap of SiC. Using Hill–Coleman's method, the density Nss was calculated to be 1.15 × 1015 cm−2 eV−1 at 100 Hz and 7.81 × 1012 cm−2 eV−1 at 1 MHz, which explains the larger value of capacitance at low frequencies. Relaxation times and capture cross sections of Nss were also estimated. Calculated values of Nss were used in a Silvaco simulation that emphasize that bulk level defects present in the SiC also contributes in the experimentally observed strange peaks in C–V characteristics of fabricated SBD. At higher current levels, calculated values of Rs (V, f), confirm an increase of leakage current through residual oxide and describes the capacitance roll-off phenomena in the fabricated SBD.

36 citations

Journal ArticleDOI
TL;DR: In this article, the authors have fabricated H-terminated Pb/p-type Si Schottky contacts with and without the native oxide layer to explain the importance of the fact that the neutral region resistance value is considered in calculating the interface state density distribution from the nonideal forward bias currentvoltage (I-V) characteristics.
Abstract: We have fabricated H-terminated Pb/p-type Si Schottky contacts with and without the native oxide layer to explain the importance of the fact that the neutral region resistance value is considered in calculating the interface state density distribution from the nonideal forward bias current–voltage (I–V) characteristics. The diodes with the native oxide layer (metal–insulating layer–semiconductor (MIS)) showed nonideal I–V behavior with an ideality factor value of 1.310 and the barrier height value of 0.746 eV. An ideality factor value of 1.065 and a barrier height value of 0.743 eV were obtained for the diodes without the native oxide layer (MS). At the same energy position near the top of the valance band, the calculated interface states density ( N ss ) values, obtained without taking into account the series resistance of the devices (i.e. without subtracting the voltage drop across the series resistance from the applied voltage values V) is almost one order of magnitude larger than N ss values obtained by taking into account the series resistance.

36 citations

Journal ArticleDOI
TL;DR: In this paper, a modified Norde's function combined with the conventional forward I?V method has been used to extract the parameters including barrier height and series resistance, and it has been seen that there is a good agreement between the barrier height values from both methods.
Abstract: We have fabricated an Al/Safranin T (ST)/n-Si/AuSb device and have investigated its current?voltage (I?V), capacitance?voltage (C?V) and capacitance?frequency (C?f) characteristics at room temperature. The barrier height and ideality factor values of 0.78 eV and 3.52 have been obtained from the forward bias current?voltage plot. The value of the barrier height was compared with the barrier height value of 0.50 eV of a conventional Al/n-Si diode. This was attributed to the ST organic film modifying the effective barrier height by affecting the space charge region of the inorganic Si semiconductor substrate. A modified Norde's function combined with the conventional forward I?V method has been used to extract the parameters including barrier height and series resistance. The barrier height and series resistance obtained from Norde's function have been compared with those from Cheung functions, and it has been seen that there is a good agreement between the barrier height values from both methods. It has also been seen that the values of capacitance are almost independent of frequency up to a certain value of frequency, whereas at high frequencies the capacitance has decreased. The higher values of capacitance at low frequencies have been attributed to the excess capacitance resulting from the interface states in equilibrium with the n-Si that can follow the alternating current (ac) signal.

36 citations

Journal ArticleDOI
S.J. Kim1, K.W. Wang, G.P. Vella-Coleiro, J.W. Lutze, Y. Ota, G. Guth 
TL;DR: In this article, a planar planar InP junction FET with a shallow (4000-A) n-channel implant, an n+source-drain implant to reduce FET series resistance, and a p-gate implant to form a shallow abrupt p-n junction, followed by a rapid thermal activation.
Abstract: We describe a high-performance fully ion-implanted planar InP junction FET fabricated by a shallow (4000-A) n-channel implant, an n+source-drain implant to reduce FET series resistance, and a p-gate implant to form a shallow (2000-A) abrupt p-n junction, followed by a rapid thermal activation. From FET's with gates 2 µm long, a transconductance of 50 mS/mm and an output impedance of 400 Ω.mm are measured at zero gate bias with a gate capacitance of 1.2 pF/mm. The FET has a threshold voltage of -2.4 V, and a saturated drain current of 60 mA/mm at V gs = 0 V with negligible drift.

36 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the effect of temperature on the performance of a Pd/AlGaN Schottky diode-type hydrogen sensor with a fixed current bias.

36 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023121
2022235
2021126
2020170
2019171
2018206