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Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.


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Journal ArticleDOI
TL;DR: In this paper, a large-signal simulation model based on non-sinusoidal voltage excitation is used to study the influence of skin depth on the parasitic series resistance of millimeter-wave IMPATT devices based on Silicon.
Abstract: An attempt is made in this paper to study the influence of skin depth on the parasitic series resistance of millimeter-wave IMPATT devices based on Silicon. The method is based on the concept of depletion width modulation of the device under large-signal condition. A large-signal simulation model based on non-sinusoidal voltage excitation is used for this study. The electric field snap-shots of 35 GHz Single-Drift Region (SDR) and 94 GHz Double-Drift Region (DDR) IMPATT devices are first obtained from which the series resistances are estimated by incorporating the effect of skin depth in the modeling and simulation. The series resistances of these devices are also obtained by neglecting the effect of skin depth. The values of series resistances obtained from the simulation are compared with the corresponding experimentally reported values. It is observed that the series resistance estimated by including the skin effect is in closer agreement with the experimental values as compared to that without including the same. Thus the skin effect plays an important role for determining the series resistance of IMPATT devices at millimeter-wave frequency bands.

36 citations

Journal ArticleDOI
TL;DR: In this paper, the Schottky junction diodes with configuration of Ag/ZnO/FTO have been fabricated to study the devices electrical properties by currentvoltage (I-V) and capacitance-voltage measurements.

36 citations

Journal ArticleDOI
TL;DR: The degradation of high-frequency characteristics of a 1.0-THz double-drift region (DDR) impact avalanche transit time (IMPATT) diode based on wurtzite gallium nitride (Wz-GaN) has been investigated in this article.
Abstract: The degradation of high-frequency characteristics of a 1.0-THz double-drift region (DDR) impact avalanche transit time (IMPATT) diode based on wurtzite gallium nitride (Wz-GaN), due to the influence of parasitic series resistance, has been investigated. A two-dimensional (2-D) large-signal (L-S) simulation method based on a non-sinusoidal voltage excitation (NSVE) model has been used for this purpose. A comprehensive model of series resistance has been developed by considering the influence of skin effect, and the said model has been incorporated in the 2-D L-S simulation for studying the effect of RF power output and DC to RF conversion efficiency of the device. Results indicate 24.2–35.9% reduction in power output and efficiency due to the RF power dissipation in the positive series resistance. However, the device can still deliver 191.7–202.9 mW peak RF power to the load at 1.0 THz with 8.48–6.41% conversion efficiency. GaN IMPATT diodes are capable of generating higher RF power at around 1 THz than conventional diodes, but the effect of parasitic series resistance causes havoc reduction in power output and efficiency. The nature of the parasitic resistance is studied here in the level of device fabrication and optimization, which to our knowledge is not available at present.

36 citations

Journal ArticleDOI
TL;DR: When anodized tantalum is subjected to temperatures in excess of 200°C, the equivalent series capacitance, equivalent series resistance, and temperature, frequency, and bias dependences of these properties increase as discussed by the authors.
Abstract: When anodized tantalum is subjected to temperatures in excess of 200°C, the equivalent series capacitance, equivalent series resistance, and temperature, frequency, and bias dependences of these properties increase. These phenomena are interpreted as resulting from the extraction of oxygen from the dielectric oxide by the tantalum substrate. This process creates an oxygen‐deficient region in the oxide whose semiconductivity causes the above‐mentioned changes in dielectric properties. Reanodization of the sample removes the effects associated with the conductivity. A small increase in apparent dielectric constant, which also results from heat‐treatment, is a permanent effect.

36 citations

Journal ArticleDOI
TL;DR: In this article, a metal-insulator-semiconductor photodiode (MIS-PD) with n-type silicon as interdigitated Schottky electrodes has been fabricated.
Abstract: A metal–insulator–semiconductor photodiode (MIS-PD) as active layer with n-type silicon as interdigitated Schottky electrodes has been fabricated. The current–voltage characteristics, density of interface states and photovoltaic properties of the MIS-PD diode have been investigated. The diode has a metal–insulator–semiconductor configuration with ideality factor higher than unity. The electronic parameters (ideality factor, series resistance and barrier height) of the diode were found to be 1.94, 2.23 × 10 4 Ω and 0.74, respectively. At voltages between 0.13 and 0.50 V, the charge transport mechanism of the diode is controlled by space charge-limited current mechanism. The interface state density of the diode was found to vary from 5.54 × 10 12 to 5.67 × 10 12 eV −1 cm −2 with bias voltage. The Au/SiO 2 /n-Si/Al device shows a photovoltaic behavior with a maximum open circuit voltage V oc of 97.7 mV and short-circuit current I sc of 17.4 μA under lower illumination intensities. The obtained electronic parameters confirm that the Au/SiO 2 /n-Si/Al diode is a MIS type photodiode.

36 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023121
2022235
2021126
2020170
2019171
2018206