Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

Growth of Carbon Dot-Decorated ZnO Nanorods on a Graphite-Coated Paper Substrate to Fabricate a Flexible and Self-Powered Schottky Diode for UV Detection.

Abstract: The fabrication of flexible as well as self-powered optoelectronic devices is a growing and challenging area of research Some scientists have reported the fabrication of either flexible or self-powered photodetectors recently However, most of the literature studies fail to report the fabrication of self-powered as well as flexible photodetectors This study reports the fabrication of self-powered, carbon dot (CD)-enhanced, flexible ZnO/graphite heterojunction-based UV detector where cellulose paper has been used as the substrate A detailed study on the crystallinity and the defects of the ZnO nanorods has been done with appropriate characterizations The CD-enhanced ZnO/graphite heterojunction showed Schottky characteristics The Schottky parameters such as the barrier height, ideality factor, and the series resistance have also been calculated using the Cheung-Cheung method The observed values of barrier height, ideality factor, and the series resistance are 074 eV, 374, and 503 kΩ, respectively The transient response at self-powered condition has been demonstrated The response time and the recovery time at self-powered condition have also been calculated with the help of the transient response, and those values are ∼2 and ∼32 s, respectively The responsivity and the specific detectivity of the fabricated UV detector have been calculated as 957 mA/W and 427×108 Jones, respectively, at 330 nm wavelength, which is quite comparable with literature-reported values, considering a self-powered photodetector

Assessment of Ge n-MOSFETs by quantum simulation

Abstract: Quantum simulations of ultra-thin-body (UTB), double-gate (DG), end of the ITRS-2001 roadmap germanium n-MOSFETs are performed using the non-equilibrium Green's function (NEGF) formalism Ballistic simulations show that Ge (111) n-MOSFETs suffer from high source-to-drain tunneling in the off-state and low semiconductor capacitance in the on-state However, devices fabricated on Ge (100) wafers perform better compared to their silicon counterparts Design optimization studies show that a stiff tolerance for body thickness variations and a super-steep source-drain doping gradient are necessary to optimize the device performance Finally, it was observed from quantum scattering simulations that the source-drain series resistance limits the otherwise near-ballistic intrinsic device operation

Electro-analytical characterization of photovoltaic cells by combining voltammetry and impedance spectroscopy: voltage dependent parameters of a silicon solar cell under controlled illumination and temperature

Abstract: This work reports a detailed electro-analytical framework for direct determination of a broad range of performance-indicator parameters of silicon solar cells. A mono-crystalline Si cell, equipped with the efficiency-boosting back surface field (BSF) feature, is used as a model system for this study. Independently controlled illumination (0–1 Sun, from a solar simulator) and temperature of the cell prevent the interference of photothermal and photovoltaic processes during the measurements. The technique of D.C. voltammetry is employed to obtain current–voltage plots, fill-factors, efficiencies and effective cell resistances. The same experimental platform also supports A.C. impedance spectroscopic probing of the solar cell, which, in combination with complex nonlinear least square analysis of the experimental data, provides detailed information about both the emitter–base and the BSF components of the photovoltaic device. These impedance measurements lead to straightforward determination of the diffusion and depletion layer capacitances, diode resistance, series resistance, concentration of majority carriers as well as lifetime of minority carriers in the base, resistance and capacitance of the BSF junction, and relaxation time of holes in the BSF. The results presented here demonstrate how relatively simple electro-analytical experiments can be strategically utilized for quantitative characterization of photovoltaic systems.

Apparatus and method for charge pump control with adjustable series resistance

Abstract: A charge pump is provided. The charge pump may include an oscillator, a first switch, a second switch, a capacitor/switch network, an error amplifier, an adjustable resistance circuit, a first switch driver, and a second switch driver. In one embodiment, the first and second drivers each receive the oscillator voltage, and drive the first and second switches, respectively. Further, the adjustable resistance circuit is connected in series with the first and second switch circuits. The charge pump is arranged in a closed loop with the error amplifier driving the adjustable resistance circuit. The resistance of the adjustable resistance circuit is modulated to regulate the output voltage.